Doubly-Resonant Photonic Crystal Cavities for Efficient Second-Harmonic Generation in III-V Semiconductors.

Second-order nonlinear effects, such as second-harmonic generation, can be strongly enhanced in nanofabricated photonic materials when both fundamental and harmonic frequencies are spatially and temporally confined. Practically designing low-volume and doubly-resonant nanoresonators in conventional semiconductor compounds is challenging owing to their intrinsic refractive index dispersion. In this work we review a recently developed strategy to design doubly-resonant nanocavities with low mode volume and large quality factor via localized defects in a photonic crystal structure. We built on this approach by applying an evolutionary optimization algorithm in connection with Maxwell equations solvers; the proposed design recipe can be applied to any material platform. We explicitly calculated the second-harmonic generation efficiency for doubly-resonant photonic crystal cavity designs in typical III-V semiconductor materials, such as GaN and AlGaAs, while targeting a fundamental harmonic at telecom wavelengths and fully accounting for the tensor nature of the respective nonlinear susceptibilities. These results may stimulate the realization of small footprint photonic nanostructures in leading semiconductor material platforms to achieve unprecedented nonlinear efficiencies.

Optimizing polarization-diversity couplers for Si-photonics: reaching the -1dB coupling efficiency threshold.

Polarization-diversity couplers are low-cost industrially-scalable passive devices that can couple light of unknown polarization from a telecom fiber-mode to a pair of TE-polarized wave-guided modes in the Silicon-on-Insulator platform. These couplers offer significantly more relaxed alignment tolerances than edge-coupling schemes, which is advantageous for commercial fiber-packaging of Si-photonic circuits. However, until now, polarization-diversity couplers have not offered sufficient coupling efficiency to motivate serious commercial consideration. Using 3D finite difference time domain calculations for device optimization, we identify Silicon-on-Insulator polarization-diversity couplers with 1,550 nm coupling efficiencies of -0.95 dB and -1.9 dB, for designs with and without bottom-reflector elements, respectively. These designs offer a significant improvement over state-of-the-art performance, and effectively bridge the "performance gap" between polarization-diversity couplers and 1D-grating couplers. Our best polarization-diversity coupler design goes beyond the -1dB efficiency limit that is typically accepted as the minimum needed for industrial adoption of coupler devices in the telecoms market.

How to assess light trapping structures versus a Lambertian Scatterer for solar cells?

We propose a new figure of merit to assess the performance of light trapping nanostructures for solar cells, which we call the light trapping efficiency (LTE). The LTE has a target value of unity to represent the performance of an ideal Lambertian scatterer, although this is not an absolute limit but rather a benchmark value. Since the LTE aims to assess the nanostructure itself, it is, in principle, independent of the material, fabrication method or technology used. We use the LTE to compare numerous proposals in the literature and to identify the most promising light trapping strategies. We find that different types of photonic structures allow approaching the Lambertian limit, which shows that the light trapping problem can be approached from multiple directions. The LTE of theoretical structures significantly exceeds that of experimental structures, which highlights the need for theoretical descriptions to be more comprehensive and to take all relevant electro-optic effects into account.

Broad parameter optimization of polarization-diversity 2D grating couplers for silicon photonics.

Polarization-diversity couplers, which are designed to couple the unknown polarization state of an optical fiber into the TE-polarized modes of integrated waveguides, are important for the development of practical all-optical circuits. We describe the use of a full 3D finite difference time domain (FDTD) calculation campaign to rigorously optimize the 2D photonic crystal grating that couples a single-mode telecom fiber to the silicon waveguides of a Silicon-on-Insulator (SOI) platform. With this approach we identify the unique optimum combination of etch-depth, hole-radius, and grating-pitch of the photonic crystal array for best performance at 1550 nm. The mean (polarization-averaged) coupling efficiency of 48% (-3.2dB) exceeds reported efficiencies of analogous couplers, and has only a marginal dependence on the polarization state of the input fiber (48 ± 3%). In addition, 3D-FDTD calculations are used to characterize the propagation direction, mode-profile, and polarization of light coupled from the fiber into the SOI slab. Such information is crucial for component design and goes beyond previously available results from existing approximations and simulations of 2D-grating coupler performance. Calculations of photonic mode dispersion in the grating coupler, by means of guided-mode expansion, indicate that the coupling is due to an optically active resonant guided mode in the photonic crystal array. This points towards a fast optimization scheme that enhances both the performance and the physical interpretation of 3D-FDTD simulations.

Dual gratings for enhanced light trapping in thin-film solar cells by a layer-transfer technique.

Thin film solar cells benefit significantly from the enhanced light trapping offered by photonic nanostructures. The thin film is typically patterned on one side only due to technological constraints. The ability to independently pattern both sides of the thin film increases the degrees of freedom available to the designer, as different functions can be combined, such as the reduction of surface reflection and the excitation of quasiguided modes for enhanced light absorption. Here, we demonstrate a technique based on simple layer transfer that allows us to independently pattern both sides of the thin film leading to enhanced light trapping. We used a 400 nm thin film of amorphous hydrogenated silicon and two simple 2D gratings for this proof-of-principle demonstration. Since the technique imposes no restrictions on the design parameters, any type of structure can be made.

All-optical switching in 2D silicon photonic crystals with low loss waveguides and optical cavities.

A study of the optical transmission of low-loss W1.5 photonic crystal waveguides built on silicon membranes and operating at telecom wavelengths is presented. The feasibility of performing all-optical switching is demonstrated for W1.5 waveguides coupled with L3 cavities, systems amenable for incorporation in on-chip devices. Switching of waveguide transmission is achieved by means of optical excitation of free carriers using a 2.5 ns pump laser. Experimental results are reproduced by finite-difference time-domain simulations which model the response of the finite system and band structure calculations describing the infinite, ideal one.

High-speed low-voltage electro-optic modulator with a polymer-infiltrated silicon photonic crystal waveguide.

A novel electro-optic silicon-based modulator with a bandwidth of 78GHz, a drive voltage amplitude of 1V and a length of only 80 microm is proposed. Such record data allow 100Gbit/s transmission and can be achieved by exploiting a combination of several physical effects. First, we rely on the fast and strong nonlinearities of polymers infiltrated into silicon, rather than on the slower free-carrier effect in silicon. Second, we use a Mach-Zehnder interferometer with slotted slow-light waveguides for minimizing the modulator length, but nonetheless providing a long interaction time for modulation field and optical mode. Third, with this short modulator length we avoid bandwidth limitations by RC time constants. The slow-light waveguides are based on a photonic crystal. A polymer-filled narrow slot in the waveguide center forms the interaction region, where both the optical mode and the microwave modulation field are strongly confined to. The waveguides are designed to have a low optical group velocity and negligible dispersion over a 1THz bandwidth. With an adiabatic taper we significantly enhance the coupling to the slow light mode. The feasibility of broadband slow-light transmission and efficient taper coupling has been previously demonstrated by us with calculations and microwave model experiments, where fabrication-induced disorder of the photonic crystal was taken into account.

Theoretical and experimental study of the Suzuki-phase photonic crystal lattice by angle-resolved photoluminescence spectroscopy.

A complete theoretical and experimental analysis of the photonic band structure for the Suzuki-phase lattice is presented. The band diagrams were calculated by two-dimensional plane wave expansion and three-dimensional guided-mode expansion methods. Angle resolved photoluminescence spectroscopy has been used to measure the emission of the photonic crystal structure realized in active InAsP/InP slabs. Photonic bands with a very low group velocity along an entire direction of the reciprocal lattice have been measured, which may have important applications on future photonic devices. The experimentally determined dispersion is in very good agreement with the calculated photonic bands. The presence of defect modes produced by microcavities in the Suzuki-phase lattice has also been established.