On Frequency-Based Interface Circuits for Capacitive MEMS Accelerometers.

Interface circuits for capacitive MEMS accelerometers are conventionally based on charge-based approaches. A promising alternative to these is provided by frequency-based readout techniques that have some unique advantages as well as a few challenges associated with them. This paper addresses these techniques and presents a derivation of the fundamental resolution limits that are imposed on them by phase noise. Starting with an overview of basic operating principles, associated properties and challenges, the discussions then focus on the fundamental trade-offs between noise, power dissipation and signal bandwidth (BW) for the LC-oscillator-based frequency readout and for the conventional charge-based switched-capacitor (SC) readout. Closed-form analytical formulas are derived to facilitate a fair comparison between the two approaches. Benchmarking results indicate that, with the same bandwidth requirement, charge-based readout circuits are more suitable when optimizing for noise performance, while there is still some room for frequency-based techniques when optimizing for power consumption, especially when flicker phase noise can be mitigated.

Low power wide spectrum optical transmitter using avalanche mode LEDs in SOI CMOS technology.

This paper presents a low power monolithically integrated optical transmitter with avalanche mode light emitting diodes in a 140 nm silicon-on-insulator CMOS technology. Avalanche mode LEDs in silicon exhibit wide-spectrum electroluminescence (400 nm < λ < 850 nm), which has a significant overlap with the responsivity of silicon photodiodes. This enables monolithic CMOS integration of optocouplers, for e.g. smart power applications requiring high data rate communication with a large galvanic isolation. To ensure a certain minimum number of photons per data pulse (or per bit), light emitting diode drivers must be robust against process, operating conditions and temperature variations of the light emitting diode. Combined with the avalanche mode light emitting diode's steep current-voltage curve at relatively high breakdown voltages, this conventionally results in high power consumption and significant heating. The presented transmitter circuit is intrinsically robust against these issues, thereby enabling low power operation.

Monolithic optical link in silicon-on-insulator CMOS technology.

This work presents a monolithic laterally-coupled wide-spectrum (350 nm < λ < 1270 nm) optical link in a silicon-on-insulator CMOS technology. The link consists of a silicon (Si) light-emitting diode (LED) as the optical source and a Si photodiode (PD) as the detector; both realized by vertical abrupt n+p junctions, separated by a shallow trench isolation composed of silicon dioxide. Medium trench isolation around the devices along with the buried oxide layer provides galvanic isolation. Optical coupling in both avalanche-mode and forward-mode operation of the LED are analyzed for various designs and bias conditions. From both DC and pulsed transient measurements, it is further shown that heating in the avalanche-mode LED leads to a slow thermal coupling to the PD with time constants in the ms range. An integrated heat sink in the same technology leads to a ∼ 6 times reduction in the change in PD junction temperature per unit electrical power dissipated in the avalanche-mode LED. The analysis paves way for wide-spectrum optical links integrated in smart power technologies.