Anti-Stokes photoluminescence probing k-conservation and thermalization of minority carriers in degenerately doped semiconductors.

It has recently been found that anti-Stokes photoluminescence can be observed in degenerately n-doped indium phosphide nanowires, when exciting directly into the electron gas. This anti-Stokes mechanism has not been observed before and allows the study of carrier relaxation and recombination using standard photoluminescence techniques. It is important to know if this anti-Stokes photoluminescence also occurs in bulk semiconductors as well as its relation to carrier recombination and relaxation. Here we show that similar anti-Stokes photoluminescence can indeed be observed in degenerately doped bulk indium phosphide and gallium arsenide and is caused by minority carriers scattering to high momenta by phonons. We find in addition that the radiative electron-hole recombination is highly momentum-conserving and that photogenerated minority carriers recombine before relaxing to the band edge at low temperatures. These observations challenge the use of models assuming thermalization of minority carriers in the analysis of highly doped devices.

Coupling of light into nanowire arrays and subsequent absorption.

We present a theoretical study of the absorption of light in periodic arrays of InP nanowires. The absorption in the array depends strongly on the diameter and the length of the nanowires, as well as the period of the array. Nanowires of a length of just 2 microm are able, after an appropriate choice for the other parameters, to absorb more than 90% of the incident energy of TE and TM polarized light, with photon energies almost all the way down to the band gap energy and an incidence angle up to 50 degree. This high total absorption arises from a good coupling of the incident light into the nanowire array at the top interface between air and the array and absorption inside the array before the light reaches the interface between the nanowires and the substrate. We find that for a given photon energy there exists a critical nanowire diameter above which a dramatic increase in the absorption occurs. The critical diameter decreases for increasing photon energies, and is directly related to the dispersion of waveguiding modes in single isolated nanowires. A characterization showed that the absorption characteristics of the nanowire arrays are very promising for photovoltaic applications.

Photoemission electron microscopy using extreme ultraviolet attosecond pulse trains.

We report the first experiments carried out on a new imaging setup, which combines the high spatial resolution of a photoemission electron microscope (PEEM) with the temporal resolution of extreme ultraviolet (XUV) attosecond pulse trains. The very short pulses were provided by high-harmonic generation and used to illuminate lithographic structures and Au nanoparticles, which, in turn, were imaged with a PEEM resolving features below 300 nm. We argue that the spatial resolution is limited by the lack of electron energy filtering in this particular demonstration experiment. Problems with extensive space charge effects, which can occur due to the low probe pulse repetition rate and extremely short duration, are solved by reducing peak intensity while maintaining a sufficient average intensity to allow imaging. Finally, a powerful femtosecond infrared (IR) beam was combined with the XUV beam in a pump-probe setup where delays could be varied from subfemtoseconds to picoseconds. The IR pump beam could induce multiphoton electron emission in resonant features on the surface. The interaction between the electrons emitted by the pump and probe pulses could be observed.