Thermal modeling of electrically-pumped continuous-wave microring resonator-based topological insulator lasers.

Deleterious effects caused by Joule heating in electrically-pumped continuous-wave InP-based topological insulator lasers based on two-dimensional microring resonator arrays are estimated in this theoretical study. Steady-state temperature distributions within such an array are developed using a full numerical solution. Thermal interactions between active gain regions and ring resonators pose significant operational and integration challenges, as these devices are extremely sensitive to temperature-induced changes in a material's index of refraction. Designing such an array benefits from clear understanding on the effects of systematic non-uniform heating profiles due to temperature variations among the rings. This paper first presents the thermal modeling of a single isolated ring under electrical pumping and then discusses its impact on an operational array composed of 10 × 10 such rings. The simulation results reported here were benchmarked against experimental measurements of the mircoring lasers, wherever possible. Calculations based on a tight-binding model for the array suggest that the laser exhibits single-mode optical output with the preservation of topological properties up to 4 times the threshold current. The useful operating range of the array is mainly limited by the thermal shifts of wavelengths in addition to the wavelength disorders due to fabrication imperfections.

Rh/InGaN1-xOx nanoarchitecture for light-driven methane reforming with carbon dioxide toward syngas.

Light-driven dry reforming of methane toward syngas presents a proper solution for alleviating climate change and for the sustainable supply of transportation fuels and chemicals. Herein, Rh/InGaN1-xOx nanowires supported by silicon wafer are explored as an ideal platform for loading Rh nanoparticles, thus assembling a new nanoarchitecture for this grand topic. In combination with the remarkable photo-thermal synergy, the O atoms in Rh/InGaN1-xOx can significantly lower the apparent activation energy of dry reforming of methane from 2.96 eV downward to 1.70 eV. The as-designed Rh/InGaN1-xOx NWs nanoarchitecture thus demonstrates a measurable syngas evolution rate of 180.9 mmol gcat-1 h-1 with a marked selectivity of 96.3% under concentrated light illumination of 6 W cm-2. What is more, a high turnover number (TON) of 4182 mol syngas per mole Rh has been realized after six reuse cycles without obvious activity degradation. The correlative 18O isotope labeling experiments, in-situ irradiated X-ray photoelectron spectroscopy (ISI-XPS) and in-situ diffuse reflectance Fourier transform infrared spectroscopy characterizations, as well as density functional theory calculations reveal that under light illumination, Rh/InGaN1-xOx NWs facilitate releasing *CH3 and H+ from CH4 by holes, followed by H2 evolution from H+ reduction with electrons. Subsequently, the O atoms in Rh/InGaN1-xOx can directly participate in CO generation by reacting with the *C species from CH4 dehydrogenation and contributes to the coke elimination, in concurrent formation of O vacancies. The resultant O vacancies are then replenished by CO2, showing an ideal chemical loop. This work presents a green strategy for syngas production via light-driven dry reforming of methane.

A semiconducting hybrid of RhOx/GaN@InGaN for simultaneous activation of methane and water toward syngas by photocatalysis.

Prior to the eventual arrival of carbon neutrality, solar-driven syngas production from methane steam reforming presents a promising approach to produce transportation fuels and chemicals. Simultaneous activation of the two reactants, i.e. methane and water, with notable geometric and polar discrepancy is at the crux of this important subject yet greatly challenging. This work explores an exceptional semiconducting hybrid of RhOx/GaN@InGaN nanowires for overcoming this critical challenge to achieve efficient syngas generation from methane steam reforming by photocatalysis. By coordinating density functional theoretical calculations and microscopic characterizations, with in situ spectroscopic measurements, it is found that the multifunctional RhOx/GaN interface is effective for simultaneously activating both CH4 and H2O by stretching the C-H and O-H bonds because of its unique Lewis acid/base attribute. With the aid of energetic charge carriers, the stretched C-H and O-H bonds of reactants are favorably cleaved, resulting in the key intermediates, i.e. *CH3, *OH, and *H, to sit on Rh sites, Rh sites, and N sites, respectively. Syngas is subsequently produced via energetically favored pathway without additional energy inputs except for light. As a result, a benchmarking syngas formation rate of 8.1 mol·gcat-1·h-1 is achieved with varied H2/CO ratios from 2.4 to 0.8 under concentrated light illumination of 6.3 W·cm-2, enabling the achievement of a superior turnover number of 10,493 mol syngas per mol Rh species over 300 min of long-term operation. This work presents a promising strategy for green syngas production from methane steam reforming by utilizing unlimited solar energy.

Enhancement in electro-optic performance of InAlGaAs/GaAs quantum dot lasers by ex situ thermal annealing.

This Letter reports the growth, fabrication, and characterization of molecular beam epitaxy (MBE)-grown quaternary InAlGaAs/GaAs quantum dot (QD) lasers emitting at sub-900 nm. The presence of Al in QD-based active regions acts as the origin of defects and non-radiative recombination centers. Applying optimized thermal annealing annihilates the defects in p-i-n diodes, thus lowering the reverse leakage current by six orders of magnitude compared to as-grown devices. A systematic improvement in the optical properties of the devices is also observed in the laser devices with increasing annealing time. At an annealing temperature of 700°C for 180 s, Fabry-Pérot lasers exhibit a lower pulsed threshold current density at infinite length of 570 A/cm2.

Length dependence thermal conductivity of zinc selenide (ZnSe) and zinc telluride (ZnTe) - a combined first principles and frequency domain thermoreflectance (FDTR) study.

In this study, we report the length dependence of thermal conductivity (k) of zinc blende-structured Zinc Selenide (ZnSe) and Zinc Telluride (ZnTe) for length scales between 10 nm and 10 µm using first-principles computations, based on density-functional theory. The k value of ZnSe is computed to decrease significantly from 22.9 W m-1 K-1 to 1.8 W m-1 K-1 as the length scale is diminished from 10 µm to 10 nm. The k value of ZnTe is also observed to decrease from 12.6 W m-1 K-1 to 1.2 W m-1 K-1 for the same decrease in length. We also measured the k of bulk ZnSe and ZnTe using the Frequency Domain Thermoreflectance (FDTR) technique and observed a good agreement between the FDTR measurements and first principles calculations for bulk ZnSe and ZnTe. Understanding the thermal conductivity reduction at the nanometer length scale provides an avenue to incorporate nanostructured ZnSe and ZnTe for thermoelectric applications.

Sub-bandgap photoluminescence properties of multilayer h-BN-on-sapphire.

Two-dimensional hexagonal boron nitride (h-BN) materials have garnered increasing attention due to its ability of hosting intrinsic quantum point defects. This paper presents a photoluminescence (PL) mapping study related to sub-bandgap-level emission in bulk-like multilayer h-BN films. Spatial PL intensity distributions were carefully analyzed with 500 nm spatial resolution in terms of zero phonon line (ZPL) and phonon sideband (PSB) emission-peaks and their linewidths, thereby identifying the potential quantum point defects within the films. Two types of ZPL and PSB emissions were confirmed from the point defects located at the non-edge and edge of the films. Our statistical PL data from the non-edge- and edge-areas of the sample consistently reveal broad and narrow emissions, respectively. The measured optical properties of these defects and the associated ZPL peak shift and line broadening as a function of temperature between 77° and 300° K are qualitatively and quantitatively explained. Moreover, an enhancement of the photostable PL emission by at least a factor of ×3 is observed when our pristine h-BN was irradiated with a 532 nm laser.

Intestinal iontophoresis from mucoadhesive patches: a strategy for oral delivery.

Biologics have limited permeability across the intestine and are prone to degradation in the acidic-proteolytic milieu of the gastrointestinal tract, leading to poor oral bioavailability. Iontophoresis is a promising technology that can substantially improve transport of drugs across biological barriers and has been particularly explored for skin. In this study, we investigated whether iontophoresis across the intestine can be utilized to improve oral insulin transport. Application of electric current to intestinal cells resulted in opening of the tight junctions in vitro and a consequent about 3-fold improvement in paracellular transport of insulin. When evaluated in vivo using insulin-loaded mucoadhesive patches, iontophoresis produced profound hypoglycemia (63% blood glucose drop in 3 h) without damaging the intestinal tissue and the efficacy depended on insulin dose and current density. This study presents a proof of principle for intestinal iontophoresis as a novel method for oral protein delivery.

Mid-infrared Lasers for Medical Applications: introduction to the feature issue.

This feature issue contains a series of papers that report the most recent advances in the field of mid-infrared light sources used for medical applications, including tissue imaging, reconstruction, excision, and ablation. Many biomolecular compounds have strong resonances in the mid-infrared region and medicine is ideally suited to exploit this. The precision, sterility, and versatility of light in mid-infrared is opening more opportunities and this feature issue captures some of the most exciting.

Near- to mid-IR (1-13 µm) III-V semiconductor lasers: introduction to the feature issue.

This feature issue reports on the most recent advances in the field of III-V semiconductor lasers emitting in the near- to mid-IR spectral regions, with a particular focus on devices with an emission wavelength range between 1 and 13 µm.

Heterodyne locking of a fully integrated optical phase-locked loop with on-chip modulators.

We design and experimentally demonstrate a highly integrated heterodyne optical phase-locked loop (OPLL) consisting of an InP-based coherent photonic receiver, high-speed feedback electronics, and an RF synthesizer. Such coherent photonic integrated circuits contain two widely tunable lasers, semiconductor optical amplifiers, phase modulators, and a pair of balanced photodetectors. Offset phase-locking of the two lasers is achieved by applying an RF signal to an on-chip optical phase modulator following one of the lasers and locking the other one to a resulting optical sideband. Offset locking frequency range >16 GHz is achieved for such a highly sensitive OPLL system which can employ up to the third-order-harmonic optical sidebands for locking. Furthermore, the rms phase error between the two lasers is measured to be 8°.

Towards chip-scale optical frequency synthesis based on optical heterodyne phase-locked loop.

An integrated heterodyne optical phase-locked loop was designed and demonstrated with an indium phosphide based photonic integrated circuit and commercial off-the-shelf electronic components. As an input reference, a stable microresonator-based optical frequency comb with a 50-dB span of 25 nm (~3 THz) around 1550 nm, having a spacing of ~26 GHz, was used. A widely-tunable on-chip sampled-grating distributed-Bragg-reflector laser is offset locked across multiple comb lines. An arbitrary frequency synthesis between the comb lines is demonstrated by tuning the RF offset source, and better than 100Hz tuning resolution with ± 5 Hz accuracy is obtained. Frequency switching of the on-chip laser to a point more than two dozen comb lines away (~5.6 nm) and simultaneous locking to the corresponding nearest comb line is also achieved in a time ~200 ns. A low residual phase noise of the optical phase-locking system is successfully achieved, as experimentally verified by the value of -80 dBc/Hz at an offset of as low as 200 Hz.

Electric-field control of ferromagnetism in Mn-doped ZnO nanowires.

In this Letter, the electric-field control of ferromagnetism was demonstrated in a back-gated Mn-doped ZnO (Mn-ZnO) nanowire (NW) field-effect transistor (FET). The ZnO NWs were synthesized by a thermal evaporation method, and the Mn doping of 1 atom % was subsequently carried out in a MBE system using a gas-phase surface diffusion process. Detailed structural analysis confirmed the single crystallinity of Mn-ZnO NWs and excluded the presence of any precipitates or secondary phases. For the transistor, the field-effect mobility and n-type carrier concentration were estimated to be 0.65 cm(2)/V·s and 6.82 × 10(18) cm(-3), respectively. The magnetic hysteresis curves measured under different temperatures (T = 10-350 K) clearly demonstrate the presence of ferromagnetism above room temperature. It suggests that the effect of quantum confinements in NWs improves Tc, and meanwhile minimizes crystalline defects. The magnetoresistace (MR) of a single Mn-ZnO NW was observed up to 50 K. Most importantly, the gate modulation of the MR ratio was up to 2.5 % at 1.9 K, which implies the electric-field control of ferromagnetism in a single Mn-ZnO NW.

Temperature dependence of electrical characteristics of Pt/GaN Schottky diode fabricated by UHV e-beam evaporation.

Temperature-dependent electrical characterization of Pt/n-GaN Schottky barrier diodes prepared by ultra high vacuum evaporation has been done. Analysis has been made to determine the origin of the anomalous temperature dependence of the Schottky barrier height, the ideality factor, and the Richardson constant calculated from the I-V-T characteristics. Variable-temperature Hall effect measurements have been carried out to understand charge transport at low temperature. The modified activation energy plot from the barrier inhomogeneity model has given the value of 32.2 A/(cm2 K2) for the Richardson constant A** in the temperature range 200 to 380 K which is close to the known value of 26.4A/(cm2 K2) for n-type GaN.