The Role of Comparisons in Judgments of Loneliness.

Loneliness-perceived social isolation-is defined as a discrepancy between existing social relationships and desired quality of relationships. Whereas most research has focused on existing relationships, we consider the standards against which people compare them. Participants who made downward social or temporal comparisons that depicted their contact with others as better (compared to other people's contact or compared to the past) reported less loneliness than participants who made upward comparisons that depicted their contact with others as worse (Study 1-3). Extending these causal results, in a survey of British adults, upward social comparisons predicted current loneliness, even when controlling for loneliness at a previous point in time (Study 4). Finally, content analyses of interviews with American adults who lived alone showed that social and temporal comparisons about contact with others were both prevalent and linked to expressed loneliness (Study 5). These findings contribute to understanding the social cognition of loneliness, extend the effects of comparisons about social connection to the important public health problem of loneliness, and provide a novel tool for acutely manipulating loneliness.

Satisfiability Attack-Resistant Camouflaged Two-Dimensional Heterostructure Devices.

Reverse engineering (RE) is one of the major security threats to the semiconductor industry due to the involvement of untrustworthy parties in an increasingly globalized chip manufacturing supply chain. RE efforts have already been successful in extracting device level functionalities from an integrated circuit (IC) with very limited resources. Camouflaging is an obfuscation method that can thwart such RE. Existing work on IC camouflaging primarily involves transformable interconnects and/or covert gates where variation in doping and dummy contacts hide the circuit structure or build cells that look alike but have different functionalities. Emerging solutions, such as polymorphic gates based on a giant spin Hall effect and Si nanowire field effect transistors (FETs), are also promising but add significant area overhead and are successfully decamouflaged by the satisfiability solver (SAT)-based RE techniques. Here, we harness the properties of two-dimensional (2D) transition-metal dichalcogenides (TMDs) including MoS2, MoSe2, MoTe2, WS2, and WSe2 and their optically transparent transition-metal oxides (TMOs) to demonstrate area efficient camouflaging solutions that are resilient to SAT attack and automatic test pattern generation attacks. We show that resistors with resistance values differing by 5 orders of magnitude, diodes with variable turn-on voltages and reverse saturation currents, and FETs with adjustable conduction type, threshold voltages, and switching characteristics can be optically camouflaged to look exactly similar by engineering TMO/TMD heterostructures, allowing hardware obfuscation of both digital and analog circuits. Since this 2D heterostructure devices family is intrinsically camouflaged, NAND/NOR/AND/OR gates in the circuit can be obfuscated with significantly less area overhead, allowing 100% logic obfuscation compared to only 5% for complementary metal oxide semiconductor (CMOS)-based camouflaging. Finally, we demonstrate that the largest benchmarking circuit from ISCAS'85, comprised of more than 4000 logic gates when obfuscated with the CMOS-based technique, is successfully decamouflaged by SAT attack in <40 min; whereas, it renders to be invulnerable even in more than 10 h when camouflaged with 2D heterostructure devices, thereby corroborating our hypothesis of high resilience against RE. Our approach of connecting material properties to innovative devices to secure circuits can be considered as a one of a kind demonstration, highlighting the benefits of cross-layer optimization.

Smile (but only deliberately) though your heart is aching: Loneliness is associated with impaired spontaneous smile mimicry.

As social beings, humans harbor an evolved capacity for loneliness - perceived social isolation. Loneliness is associated with atypical affective and social processing, as well as physiological dysregulation. We investigated how loneliness influences spontaneous facial mimicry (SFM), an interpersonal response involved in social connection and emotional contagion. We presented participants with emotional stimuli, such as video clips of actors expressing anger, fear, sadness, or joy, and emotional IAPS images. We measured participants' zygomaticus major ("smiling") muscle and their corrugator supercilii ("frowning") muscle with facial electromyography (fEMG). We also measured self-reported loneliness, depression, and extraversion levels. For socially connected individuals we found intact SFM, as reflected in greater fEMG activity of the zygomaticus and corrugator to positive and negative expressions, respectively. However, individuals reporting higher levels of loneliness lacked SFM for expressions of joy. Loneliness did not impair deliberate mimicry activity to the same expressions, or spontaneous reactions to positive, negative, or neutral IAPS images. Depression and extraversion did not predict any differences in fEMG responses. We suggest that impairments in spontaneous "smiling back" at another - a decreased interpersonal resonance - could contribute to negative social and emotional consequences of loneliness and may facilitate loneliness contagion.

Thickness Trends of Electron and Hole Conduction and Contact Carrier Injection in Surface Charge Transfer Doped 2D Field Effect Transistors.

One of the main limiting factors in the performance of devices based on two-dimensional (2D) materials is Fermi level pinning at the contacts, which creates Schottky barriers (SBs) that increase contact resistance and, for most transition metal dichalcogenides (TMDs), limit hole conduction. A promising method to mitigate these problems is surface charge transfer doping (SCTD), which places fixed charge at the surface of the material and thins the SBs by locally shifting the energy bands. We use a mild O2 plasma to convert the top few layers of a given TMD into a substoichiometric oxide that serves as a p-type SCTD layer. A comprehensive experimental study, backed by TCAD simulations, involving MoS2, MoSe2, MoTe2, WS2, and WSe2 flakes of various thicknesses exposed to different plasma times is used to investigate the underlying mechanisms responsible for SCTD. The surface charge at the top of the channel and the gate-modulated surface potential at the bottom are found to have competing effects on the channel potential, which results in a decrease in the doping-induced threshold shift and an increase in minimum OFF state current with increasing thickness. Additionally, an undoped channel region is shown to mitigate carrier injection issues in sufficiently thin flakes. Notably, the band movements underlying the SCTD effects are independent of the particular semiconductor material, SCTD strategy, and doping polarity. Consequently, our findings provide critical insights for the design of high-performance transistors for a wide range of materials and SCTD mechanisms including TMD devices with strong hole conduction.

Interoception and Social Connection.

Interoception - the process of sensing bodily signals - has gained much interest in recent years, due to its role in physical and mental well-being. Here, we focus on the role of interoception in social connection, which is a relatively new and growing research area. Studies in this area suggest that interoception may help in appraising physiological signals in social situations, but also that (challenging) social situations may reduce interoceptive processing by shifting attention from internally- to externally- focused. We discuss potential mechanisms for the influence of interoception on social connection and highlight that flexibility in engaging interoception in social situations may be particularly important. We end with a discussion of loneliness - an extreme case of poor social connection, which is associated with physiological decline and increased mortality risk, and propose that interoceptive dysregulation is involved. We suggest that interventions aimed to improve interoceptive abilities, such as mindfulness-based meditation practices, may be key for alleviating loneliness and improving social connection.

Extraordinary Radiation Hardness of Atomically Thin MoS2.

We demonstrate that atomically thin layered two-dimensional (2D) semiconductors are promising candidates for space electronics owing to their inherent and extraordinary resilience to radiation damage from energetic heavy charged particles. In particular, we found that ultrathin MoS2 nanosheets can easily withstand proton and helium irradiation with fluences as high as ∼1016 and ∼1015 ions/cm2, respectively, corresponding to hundreds or thousands of years of unshielded exposure to radiation in space. While radiation effects on 2D material-based field effect transistors have been reported in the recent past, none of these studies could isolate the impact of irradiation on standalone ultrathin 2D layers. By adopting a unique experimental approach that exploits the van der Waals epitaxy of 2D materials, we were able to differentiate the effects of radiation on the 2D semiconducting channel from that of the underlying dielectric substrate, semiconductor/substrate interface, and metal/semiconductor contact interface, revealing the ultimate potential of these 2D materials. Furthermore, we used a statistical approach to evaluate the effect of radiation damage on critical device and material parameters, including threshold voltage, subthreshold slope, and carrier mobility. The statistical approach lends additional credence to the general conclusions drawn from this study, overcoming a common drawback of methods applied in this area of research. Our findings do not only offer exciting prospects for the operation of modern electronics in space, but may also benefit electronics applications in high-altitude flights, military aircraft, satellites, nuclear reactors, particle accelerators, and other high-radiation environments. Additionally, they highlight the importance of evaluating the impact of damage to the substrate and surrounding materials on electrical characteristics during future radiation studies of 2D materials.

Contact engineering for 2D materials and devices.

Over the past decade, the field of two-dimensional (2D) layered materials has surged, promising a new platform for studying diverse physical phenomena that are scientifically intriguing and technologically relevant. Contacts are the communication links between these 2D materials and the three-dimensional world for probing and harnessing their exquisite electronic properties. However, fundamental challenges related to contacts often limit the ultimate performance and potential of 2D materials and devices. This article provides a comprehensive overview of the basic understanding and importance of contacts to 2D materials and various strategies for engineering and improving them. In particular, we elucidate the phenomenon of Fermi level pinning at the metal/2D contact interface, the Schottky versus Ohmic nature of the contacts and various contact engineering approaches including interlayer contacts, phase engineered contacts, and basal versus edge plane contacts, among others. Finally, we also discuss some of the relatively under-addressed and unresolved issues, such as contact scaling, and conclude with a future outlook.

Three-Dimensional Integrated X-ray Diffraction Imaging of a Native Strain in Multi-Layered WSe2.

Emerging two-dimensional (2-D) materials such as transition-metal dichalcogenides show great promise as viable alternatives for semiconductor and optoelectronic devices that progress beyond silicon. Performance variability, reliability, and stochasticity in the measured transport properties represent some of the major challenges in such devices. Native strain arising from interfacial effects due to the presence of a substrate is believed to be a major contributing factor. A full three-dimensional (3-D) mapping of such native nanoscopic strain over micron length scales is highly desirable for gaining a fundamental understanding of interfacial effects but has largely remained elusive. Here, we employ coherent X-ray diffraction imaging to directly image and visualize in 3-D the native strain along the (002) direction in a typical multilayered (∼100-350 layers) 2-D dichalcogenide material (WSe2) on silicon substrate. We observe significant localized strains of ∼0.2% along the out-of-plane direction. Experimentally informed continuum models built from X-ray reconstructions trace the origin of these strains to localized nonuniform contact with the substrate (accentuated by nanometer scale asperities, i.e., surface roughness or contaminants); the mechanically exfoliated stresses and strains are localized to the contact region with the maximum strain near surface asperities being more or less independent of the number of layers. Machine-learned multimillion atomistic models show that the strain effects gain in prominence as we approach a few- to single-monolayer limit. First-principles calculations show a significant band gap shift of up to 125 meV per percent of strain. Finally, we measure the performance of multiple WSe2 transistors fabricated on the same flake; a significant variability in threshold voltage and the "off" current setting is observed among the various devices, which is attributed in part to substrate-induced localized strain. Our integrated approach has broad implications for the direct imaging and quantification of interfacial effects in devices based on layered materials or heterostructures.

Facile Electrochemical Synthesis of 2D Monolayers for High-Performance Thin-Film Transistors.

In this paper, we report high-performance monolayer thin-film transistors (TFTs) based on a variety of two-dimensional layered semiconductors such as MoS2, WS2, and MoSe2 which were obtained from their corresponding bulk counterparts via an anomalous but high-yield and low-cost electrochemical corrosion process, also referred to as electro-ablation (EA), at room temperature. These monolayer TFTs demonstrated current ON-OFF ratios in excess of 107 along with ON currents of 120 µA/µm for MoS2, 40 µA/µm for WS2, and 40 µA/µm for MoSe2 which clearly outperform the existing TFT technologies. We found that these monolayers have larger Schottky barriers for electron injection compared to their multilayer counterparts, which is partially compensated by their superior electrostatics and ultra-thin tunnel barriers. We observed an Anderson type semiconductor-to-metal transition in these monolayers and also discussed possible scattering mechanisms that manifest in the temperature dependence of the electron mobility. Finally, our study suggests superior chemical stability and electronic integrity of monolayers even after being exposed to extreme electro-oxidation and corrosion processes which is promising for the implementation of such TFTs in harsh environment sensing. Overall, the EA process proves to be a facile synthesis route offering higher monolayer yields than mechanical exfoliation and lower cost and complexity than chemical vapor deposition methods.

Mimicking Neurotransmitter Release in Chemical Synapses via Hysteresis Engineering in MoS2 Transistors.

Neurotransmitter release in chemical synapses is fundamental to diverse brain functions such as motor action, learning, cognition, emotion, perception, and consciousness. Moreover, improper functioning or abnormal release of neurotransmitter is associated with numerous neurological disorders such as epilepsy, sclerosis, schizophrenia, Alzheimer's disease, and Parkinson's disease. We have utilized hysteresis engineering in a back-gated MoS2 field effect transistor (FET) in order to mimic such neurotransmitter release dynamics in chemical synapses. All three essential features, i.e., quantal, stochastic, and excitatory or inhibitory nature of neurotransmitter release, were accurately captured in our experimental demonstration. We also mimicked an important phenomenon called long-term potentiation (LTP), which forms the basis of human memory. Finally, we demonstrated how to engineer the LTP time by operating the MoS2 FET in different regimes. Our findings could provide a critical component toward the design of next-generation smart and intelligent human-like machines and human-machine interfaces.

Social functioning and autonomic nervous system sensitivity across vocal and musical emotion in Williams syndrome and autism spectrum disorder.

Both Williams syndrome (WS) and autism spectrum disorders (ASD) are associated with unusual auditory phenotypes with respect to processing vocal and musical stimuli, which may be shaped by the atypical social profiles that characterize the syndromes. Autonomic nervous system (ANS) reactivity to vocal and musical emotional stimuli was examined in 12 children with WS, 17 children with ASD, and 20 typically developing (TD) children, and related to their level of social functioning. The results of this small-scale study showed that after controlling for between-group differences in cognitive ability, all groups showed similar emotion identification performance across conditions. Additionally, in ASD, lower autonomic reactivity to human voice, and in TD, to musical emotion, was related to more normal social functioning. Compared to TD, both clinical groups showed increased arousal to vocalizations. A further result highlighted uniquely increased arousal to music in WS, contrasted with a decrease in arousal in ASD and TD. The ASD and WS groups exhibited arousal patterns suggestive of diminished habituation to the auditory stimuli. The results are discussed in the context of the clinical presentation of WS and ASD.

Relations between social-perceptual ability in multi- and unisensory contexts, autonomic reactivity, and social functioning in individuals with Williams syndrome.

Compromised social-perceptual ability has been proposed to contribute to social dysfunction in neurodevelopmental disorders. While such impairments have been identified in Williams syndrome (WS), little is known about emotion processing in auditory and multisensory contexts. Employing a multidimensional approach, individuals with WS and typical development (TD) were tested for emotion identification across fearful, happy, and angry multisensory and unisensory face and voice stimuli. Autonomic responses were monitored in response to unimodal emotion. The WS group was administered an inventory of social functioning. Behaviorally, individuals with WS relative to TD demonstrated impaired processing of unimodal vocalizations and emotionally incongruent audiovisual compounds, reflecting a generalized deficit in social-auditory processing in WS. The TD group outperformed their counterparts with WS in identifying negative (fearful and angry) emotion, with similar between-group performance with happy stimuli. Mirroring this pattern, electrodermal activity (EDA) responses to the emotional content of the stimuli indicated that whereas those with WS showed the highest arousal to happy, and lowest arousal to fearful stimuli, the TD participants demonstrated the contrasting pattern. In WS, more normal social functioning was related to higher autonomic arousal to facial expressions. Implications for underlying neural architecture and emotional functions are discussed.

Patterns of Sensitivity to Emotion in Children with Williams Syndrome and Autism: Relations Between Autonomic Nervous System Reactivity and Social Functioning.

Williams syndrome (WS) and autism spectrum disorder (ASD) are associated with atypical social-emotional functioning. Affective visual stimuli were used to assess autonomic reactivity and emotion identification, and the social responsiveness scale was used to determine the level social functioning in children with WS and ASD contrasted with typical development (TD), to examine syndrome-specific and syndrome-general features. Children with ASD exhibited the highest arousal in response to faces, with a lack of difference in autonomic sensitivity across different emotional expressions, unlike in WS and TD. The WS group demonstrated unique deficits in identifying neutral stimuli. While autonomic responsivity to neutral faces was associated with social functioning in all children, converging profiles characterized children with WS contrasted with TD and ASD.

Problems with implementing a standardised transcranial Doppler screening programme: impact of instrumentation variation on STOP classification.

BACKGROUND: The Stroke Prevention Trial in Sickle Cell Anaemia (STOP) demonstrated the value of selective transfusion based on transcranial Doppler (TCD) US screening. This facilitated widespread surveillance, but due to reported differences with non-imaging TCD, imaging velocity thresholds have been reduced in some centres. OBJECTIVE: (1) Retrospectively review velocity measurements obtained by non-imaging and imaging TCD, using a standardised protocol. (2) Determine the impact on STOP classification of different velocity thresholds. MATERIALS AND METHODS: TCD data from 23 children (2-19 years of age) were reviewed. The TCD protocol focused on obtaining the velocity corresponding to the highest audible Doppler frequency. STOP velocity thresholds were the recommended for non-imaging TCD and values reduced by 5-15%. RESULTS: Non-imaging and imaging TCD velocities were correlated closely with little overall bias. Reducing imaging TCD velocity thresholds increased the number of abnormal and conditional classifications. Abnormal TCD imaging classifications ranged from 1.9% to 37% depending on the degree of correction applied to the velocity data. CONCLUSION: The current approach for applying STOP thresholds to imaging TCD data may not be required. Centres need to validate their imaging TCD practice to avoid inappropriate selection of patients for transfusion therapy.