Insight into OTFT Sensors Using Confocal Fluorescence Microscopy.

Confocal fluorescence microscopy provides a means to map charge carrier density within the semiconductor layer in an active organic thin film transistor (OTFT). This method exploits the inverse relationship between charge carrier density and photoluminescence (PL) intensity in OTFTs, originating from exciton quenching following exciton-charge energy transfer. This work demonstrates that confocal microscopy can be a simple yet effective approach to gain insight into doping and de-doping processes in OTFT sensors. Specifically, the mechanisms of hydrogen peroxide sensitivity are studied in low-voltage hygroscopic insulator field effect transistors (HIFETs). While the sensitivity of HIFETs to hydrogen peroxide is well known, the underlying mechanisms remain poorly understood. Using confocal microscopy, new light is shed on these mechanisms. Two distinct doping processes are discerned: one that occurs throughout the semiconductor film, independent of applied voltages; and a stronger doping effect occurring near the source electrode, when acting as an anode with respect to a negatively polarized drain electrode. These insights offer important guidance to future studies and the optimization of HIFET-based sensors. More importantly, the methods reported here are broadly applicable to the study of a range of OTFT-based sensors. This work demonstrates that confocal microscopy can be an effective research tool in this field.

A highly porous and conductive composite gate electrode for OTFT sensors.

Ionic/protonic to electronic transducers based on organic thin film transistors have shown great promise for applications in bioelectronic interface devices and biosensors, and development of materials that exhibit mixed ionic/electronic conduction are an essential part of these devices. In this work, we investigated the proton sensing properties of an all solid-state and low voltage operating organic thin film transistor (OTFT) that uses the organic mixed conductor poly(3,4-ethylenedioxythiophene) doped with poly(styrene sulfonate) (PEDOT:PSS) as the gate electrode. To address the limited sensitivity due to the lack of porosity in PEDOT:PSS base sensors, we proposed a composite gate electrode material composed of PEDOT:PSS and proton conducting mesoporous SO3H-Si-MCM-41 nanoparticles for improved proton sensitivity. The composite gate electrode doubles the proton sensitivity of the OTFT, indicating a clear advantage of adding SO3H-Si-MCM-41 in the PEDOT:PSS gate. Moreover, the OTFTs with the composite gate electrode maintained OTFT characteristics similar to that of the PEDOT:PSS gated OTFT. A detailed and systematic study of the effect of variation in the composition of PEDOT:PSS:SO3H-Si-MCM-41 on OTFT characteristics and sensing properties is carried out. Our results open up the possibility of combining inorganic nanomaterials with organic conductors in the development of highly efficient bioelectronic sensing platforms.