1.
ACS Appl Mater Interfaces
; 2(12): 3539-43, 2010 Dec.
Artigo
em Inglês
| MEDLINE
| ID: mdl-21121615
RESUMO
The heterojunction of a Pd-doped p-GaN nanowire and n-Si (100) is fabricated vertically by the vapor-liquid-solid method. The average diameter of the nanowire is 40 nm. The vertical junction reveals a significantly high rectification ratio of 10(3) at 5 V, a moderate ideality factor of â¼2, and a high breakdown voltage of â¼40 V. The charge transport across the p-n junction is dominated by the electron-hole recombination process. The voltage dependence of capacitance indicates a graded-type junction. The resistance of the junction decreases with an increase in the bias voltage confirmed by impedance measurements.