Optically Addressable Silicon Vacancy-Related Spin Centers in Rhombic Silicon Carbide with High Breakdown Characteristics and ENDOR Evidence of Their Structure.

We discovered a family of uniaxially oriented silicon vacancy-related centers with S=3/2 in a rhombic 15R-SiC crystalline matrix. We demonstrate that these centers exhibit unique characteristics such as optical spin alignment up to the temperatures of 250°C. Thus, the range of robust optically addressable vacancy-related spin centers is extended to the wide class of rhombic SiC polytypes. To use these centers for quantum applications it is essential to know their structure. Using high frequency electron nuclear double resonance, we show that the centers are formed by negatively charged silicon vacancies V_{Si}^{-} in the paramagnetic state with S=3/2 that is noncovalently bonded to the neutral carbon vacancy V_{C}^{0} in the nonparamagnetic state, located on the adjacent site along the SiC symmetry c axis.

Recombination processes in systems based on doped ionic crystals with impurity-related nanostructures.

Recombination processes leading to the tunnelling afterglow and photostimulated luminescence in systems based on host ionic crystals with impurity-related nanostructures-promising phosphors for x-ray storage-were studied by means of luminescence, EPR and optically detected magnetic resonance. It was found that in the x-ray irradiated CsBr:Eu and CsBr:Pb crystals the energy released in the spin-dependent tunnelling recombination of electron-hole pairs and self-trapped excitons in the host crystal is directionally transferred to the impurity-related low-dimensional structures. To identify the origin of recombining electron and hole centres, their EPR spectra were detected by monitoring the tunnelling afterglow and the photostimulated luminescence including the emission bands of the low-dimensional structures.