Highly efficient self-powered perovskite photodiode with an electron-blocking hole-transport NiOx layer.

Hybrid organic-inorganic perovskite materials provide noteworthy compact systems that could offer ground-breaking architectures for dynamic operations and advanced engineering in high-performance energy-harvesting optoelectronic devices. Here, we demonstrate a highly effective self-powered perovskite-based photodiode with an electron-blocking hole-transport layer (NiOx). A high value of responsivity (R = 360 mA W-1) with good detectivity (D = 2.1 × 1011 Jones) and external quantum efficiency (EQE = 76.5%) is achieved due to the excellent interface quality and suppression of the dark current at zero bias voltage owing to the NiOx layer, providing outcomes one order of magnitude higher than values currently in the literature. Meanwhile, the value of R is progressively increased to 428 mA W-1 with D = 3.6 × 1011 Jones and EQE = 77% at a bias voltage of - 1.0 V. With a diode model, we also attained a high value of the built-in potential with the NiOx layer, which is a direct signature of the improvement of the charge-selecting characteristics of the NiOx layer. We also observed fast rise and decay times of approximately 0.9 and 1.8 ms, respectively, at zero bias voltage. Hence, these astonishing results based on the perovskite active layer together with the charge-selective NiOx layer provide a platform on which to realise high-performance self-powered photodiode as well as energy-harvesting devices in the field of optoelectronics.

Uniform and bright light emission from a 3D organic light-emitting device fabricated on a bi-convex lens by a vortex-flow-assisted solution-coating method.

We herein present the results of a study on the novel fabrication process of uniform and homogeneous semiconducting polymer layers, in this case hole-injecting and fluorescent light-emitting layers that were produced by a simple solution-coating process for 3D conformal organic light-emitting diodes (3D OLEDs) on curvilinear surfaces. The solution-coating process used was a newly developed method of vortex-flow-assisted solution-coating with the support of spinning of the coating solution. It is shown that the vortex-flow-assisted spin-coating process can produce high-quality thin films at nanoscale thicknesses by controlling the liquid surface of the coating solutions, which can easily be adjusted by changing the spinning speed, even on complex curvilinear surfaces, i.e., a quasi-omnidirectional coating. This excellent film-forming ability without any serious film defects is mainly due to the reduction of line tension among the solution, air, and the substrate at the contact line due to vortex flows of the coating solution on the substrate during the vortex-spin-coating process. As a proof of concept, we present vortex-spin-coated 3D OLEDs fabricated on bi-convex lens substrates which exhibit excellent device performance with high brightness and current efficiency levels comparable to those of a conventional spin-coated 2D planar OLED on a flat substrate. It is also shown that the EL emission from the 3D OLED on the bi-convex lens substrate exhibits a diffusive Lambertian radiation pattern. The results here demonstrate that the vortex-flow-assisted spin-coating process is a promising approach for producing efficient and reliable next-generation OLEDs for 3D conformal opto-electronics.

Uniform two-dimensional crystals of polystyrene nanospheres fabricated by a surfactant-assisted spin-coating method with polyoxyethylene tridecyl ether.

Spin-coated self-assemblies of colloidal particles have been developed recently as an attractive close-packed monolayer of the particles for a variety of applications, but they are limited by the small area of their monolayers, especially given their low uniformity and monolayer coverage on large-area substrates. We report several noteworthy characteristics of a close-packed monolayer of polystyrene nanospheres (PS NSs) fabricated using a simple and inexpensive spin-coating method with a PS NS suspension mixed using the nonionic surfactant polyoxyethylene (12) tridecyl ether (PEO-TDE). In our study, we show that the PEO-TDE surfactant offers excellent wettability, surface tension, and a slow solvent evaporation rate of the PS NS suspension, similar to the conventional surfactant Triton X-100. We demonstrate that the relatively high monolayer coverage with reduced defects is produced when introducing the PEO-TDE surfactant. Specifically, monolayer coverage of more than 95% on a Si substrate was achieved, which is much better than that with the typical Triton X-100, and is one of the highest coverage rates realized by a spin-coating method. This excellent uniformity of the PS NS monolayer with high monolayer coverage is mainly attributed to the relatively low viscosity of the PS NS suspension, even at high concentrations of PEO-TDE. Moreover, the PEO-TDE surfactant provides highly uniform monolayers on a large-scale glass substrate even for large-sized PS NSs. We also highlight the fact that the PEO-TDE surfactant has another advantage in that the spin-coating process of the PS NS suspension can be done under common ambient laboratory conditions, unlike those required for the highly toxic Triton X-100. We therefore conclude that PEO-TDE can be a useful surfactant during the fabrication of close-packed monolayers for various applications owing to its simple and straightforward control of PS NSs, its uniform and high surface coverage, and due to the safety of the fabrication process.

High brightness and efficiency of polymer-blend based light-emitting layers without the assistance of the charge-trapping effect.

Polymeric light-emitting materials have been developed recently as an attractive solution-processable alternative to conventional vacuum-deposited small molecules in organic/polymeric light-emitting diodes, but they are still limited in terms of their performance, especially with low luminance and efficiency. We report on some noteworthy characteristics of a new type of single emitting layer (EML), composed of a blend of a host blue-emitting polyspirobifluorene-based copolymer and a guest yellow-emitting poly(p-phenylene vinylene) derivative copolymer. These host and guest polymers have nearly identical highest occupied molecular orbital levels of about 5.2 eV, and lowest unoccupied molecular orbital levels of about 2.4 eV and 2.9 eV, respectively, minimizing the prevailing charge-trapping properties of their blend. Even in the absence of the charge-trapping effect, it is shown that very bright green electroluminescent (EL) emission with a maximum luminance of ~142,000 cd/m2 can be realized for the blended host:guest EML at a moderate concentration (~5 wt%) of the guest polymer. Current efficiency is also observed to be up to ~14 cd/A, which is much higher than those (3.6~5.1 cd/A) of reference devices with pure host or pure guest polymeric EMLs. Moreover, there is a small change in green color emission, with CIE coordinates of (0.35, 0.60) even at high luminance, showing good color stability of the EL emission from the blended EML. These significant improvements in device performance are mainly attributed to efficient Förster resonance energy transfer between the host and guest polymers in the blended EML. Together with its simple structure and easy processability, the high brightness and efficiency of our blended polymeric EML provides a new platform for the development of solution-processable light-emitting devices and/or advanced emissive display devices.

Full-surface emission of graphene-based vertical-type organic light-emitting transistors with high on/off contrast ratios and enhanced efficiencies.

Surface-emitting organic light-emitting transistors (OLETs) could well be a core element in the next generation of active-matrix (AM) displays. We report some of the key characteristics of graphene-based vertical-type organic light-emitting transistors (Gr-VOLETs) composed of a single-layer graphene source and an emissive channel layer. It is shown that FeCl3 doping of the graphene source results in a significant improvement in the device performance of Gr-VOLETs. Using the FeCl3-doped graphene source, it is demonstrated that the full-surface electroluminescent emission of the Gr-VOLET can be effectively modulated by gate voltages with high luminance on/off ratios (~104). Current efficiencies are also observed to be much higher than those of control organic light-emitting diodes (OLEDs), even at high luminance levels exceeding 500 cd/m2. Moreover, we propose an operating mechanism to explain the improvements in the device performance i.e., the effective gate-bias-induced modulation of the hole tunnelling injection at the doped graphene source electrode. Despite its inherently simple structure, our study highlights the significant improvement in the device performance of OLETs offered by the FeCl3-doped graphene source electrode.

Homogeneous PCBM layers fabricated by horizontal-dip coating for efficient bilayer heterojunction organic photovoltaic cells.

We herein report a homogeneous [6,6]-phenyl C61 butyric acid methyl ester (PCBM) layer, produced by a solution process of horizontal-dipping (H-dipping) to improve the photovoltaic (PV) effects of bilayer heterojunction organic photovoltaic cells (OPVs) based on a bi-stacked poly(3-hexylthiophene) (P3HT) electron donor layer and a PCBM electron acceptor layer (P3HT/PCBM). It was shown that a homogeneous and uniform coating of PCBM layers in the P3HT/PCBM bilayer OPVs resulted in reliable and reproducible device performance. We recorded a power conversion efficiency (PCE) of 2.89%, which is higher than that (2.00%) of bilayer OPVs with a spin-coated PCBM layer. Moreover, introducing surfactant additives of poly(oxyethylene tridecyl ether) (PTE) into the homogeneous P3HT/PCBM PV layers resulted in the bilayer OPVs showing a PCE value of 3.95%, which is comparable to those of conventional bulk-heterojunction (BHJ) OPVs (3.57-4.13%) fabricated by conventional spin-coating. This improved device performance may be attributed to the selective collection of charge carriers at the interfaces among the active layers and electrodes due to the PTE additives as well as the homogeneous formation of the functional PCBM layer on the P3HT layer. Furthermore, H-dip-coated PCBM layers were deposited onto aligned P3HT layers by a rubbing technique, and the rubbed bilayer OPV exhibited improved in-plane anisotropic PV effects with PCE anisotropy as high as 1.81, which is also higher than that (1.54) of conventional rubbed BHJ OPVs. Our results suggest that the use of the H-dip-coating process in the fabrication of PCBM layers with the PTE interface-engineering additive could be of considerable interest to those seeking to improve PCBM-based opto-electrical organic thin-film devices.

Aligned silver nanowire-based transparent electrodes for engineering polarisation-selective optoelectronics.

We herein report on a remarkably simple, fast, and economic way of fabricating homogeneous and well oriented silver nanowires (AgNWs) that exhibit strong in-plane electrical and optical anisotropies. Using a small quantity of AgNW suspension, the horizontal-dip (H-dip) coating method was applied, in which highly oriented AgNWs were deposited unidirectionally along the direction of coating over centimetre-scale lengths very rapidly. In applying the H-dip-coating method, we adjusted the shear strain rate of the capillary flow in the Landau-Levich meniscus of the AgNW suspension, which induced a high degree of uniaxial orientational ordering (0.37-0.43) of the AgNWs, comparable with the ordering seen in archetypal nematic liquid crystal (LC) materials. These AgNWs could be used to fabricate not only transparent electrodes, but also LC-alignment electrodes for LC devices and/or polarising electrodes for organic photovoltaic devices, having the potential to revolutionise the architectures of a number of polarisation-selective opto-electronic devices for use in printed/organic electronics.