Commercial and Custom Quartz Tuning Forks for Quartz Enhanced Photoacoustic Spectroscopy: Stability under Humidity Variation.

This work investigates the behavior of commercial and custom Quartz tuning forkss (QTF) under humidity variations. The QTFs were placed inside a humidity chamber and the parameters were studied with a setup to record the resonance frequency and quality factor by resonance tracking. The variations of these parameters that led to a 1% theoretical error on the Quartz Enhanced Photoacoustic Spectroscopy (QEPAS) signal were defined. At a controlled level of humidity, the commercial and custom QTFs present similar results. Therefore, commercial QTFs appear to be a very good candidates for QEPAS as they are also affordable and small. When the humidity increases from 30 to 90 %RH, the variations in the custom QTFs' parameters remain suitable, while commercial QTFs show unpredictable behavior.

Highly Sensitive Capacitive MEMS for Photoacoustic Gas Trace Detection.

An enhanced MEMS capacitive sensor is developed for photoacoustic gas detection. This work attempts to address the lack of the literature regarding integrated and compact silicon-based photoacoustic gas sensors. The proposed mechanical resonator combines the advantages of silicon technology used in MEMS microphones and the high-quality factor, characteristic of quartz tuning fork (QTF). The suggested design focuses on a functional partitioning of the structure to simultaneously enhance the collection of the photoacoustic energy, overcome viscous damping, and provide high nominal capacitance. The sensor is modeled and fabricated using silicon-on-insulator (SOI) wafers. First, an electrical characterization is performed to evaluate the resonator frequency response and nominal capacitance. Then, under photoacoustic excitation and without using an acoustic cavity, the viability and the linearity of the sensor are demonstrated by performing measurements on calibrated concentrations of methane in dry nitrogen. In the first harmonic detection, the limit of detection (LOD) is 104 ppmv (for 1 s integration time), leading to a normalized noise equivalent absorption coefficient (NNEA) of 8.6 ⋅ 10-8 Wcm-1 Hz-1/2, which is better than that of bare Quartz-Enhanced Photoacoustic Spectroscopy (QEPAS), a state-of-the-art reference to compact and selective gas sensors.

Benzene sensing by Quartz Enhanced Photoacoustic Spectroscopy at 14.85 µm.

Benzene is a gas known to be highly pollutant for the environment, for the water and cancerogenic for humans. In this paper, we present a sensor based on Quartz Enhanced Photoacoustic Spectroscopy dedicated to benzene analysis. Exploiting the infrared emission of a 14.85 µm quantum cascade laser, the sensor is working in an off-beam configuration, allowing easy alignment and stable measurements. The technique provides a very good selectivity to the sensor and a limit of detection of 30 ppbv in 1 s, i.e. a normalized noise equivalent absorption of 1.95 × 10-8 W.cm-1.Hz-1/2. The achieved performances of the sensor have enabled measurements on several air samples of a gas station showing a non-neglectable risk in case of long exposure.

Passive Electrical Damping of a Quartz Tuning Fork as a Path to Fast Resonance Tracking in QEPAS.

In Quartz-Enhanced PhotoAcoustic Spectroscopy (QEPAS) gas sensors, the acoustic wave is detected by the piezoelectric Quartz Tuning Fork (QTF). Due to its high-quality factor, the QTF can detect very low-pressure variations, but its resonance can also be affected by the environmental variations (temperature, humidity, …), which causes an unwanted signal drift. Recently, we presented the RT-QEPAS technique that consistently corrects the signal drift by continuously measuring the QTF resonance. In this article, we present an improvement of RT-QEPAS to fasten the QTF characterization time by adding a passive electronic circuit, which causes the damping of the QTF resonance. The damping circuit is optimized analytically and through SPICE simulation. The results are supported by experimental observations, showing a 70 times improvement of the relaxation times compared to the lone QTF, which opens the way to a fast and drift-free QEPAS sensor.

Analytic Optimization of Cantilevers for Photoacoustic Gas Sensor with Capacitive Transduction.

We propose a new concept of photoacoustic gas sensing based on capacitive transduction which allows full integration while conserving the required characteristics of the sensor. For the sensor's performance optimization, trial and error method is not feasible due to economic and time constrains. Therefore, we focus on a theoretical optimization of the sensor reinforced by computational methods implemented in a Python programming environment. We present an analytic model to optimize the geometry of a cantilever used as a capacitive transducer in photoacoustic spectroscopy. We describe all the physical parameters which have to be considered for this optimization (photoacoustic force, damping, mechanical susceptibility, capacitive transduction, etc.). These parameters are characterized by opposite trends. They are studied and compared to obtain geometric values for which the signal output and signal-to-noise ratio are maximized.

Etched-cavity GaSb laser diodes on a MOVPE GaSb-on-Si template.

We report on 2.3-µm etched-cavity GaSb-based laser diodes (LDs) epitaxially integrated on on-axis (001)Si and benchmarked against their cleaved facet counterparts. The LDs were grown in two steps. First, a GaSb-on-Si template was grown by metal-organic vapor phase epitaxy (MOVPE) before the growth of the LD heterostructure by molecular-beam epitaxy. Different etched-facet geometries operate in continuous wave well above room temperature, and their performance are similar to those of cleaved-cavity LDs. These results show that etching mirrors is a viable route to form laser cavities in the GaSb technology and that MOVPE GaSb-on-Si templates are a suitable platform for optoelectronic devices overgrowth.

Off-beam QEPAS sensor using an 11-µm DFB-QCL with an optimized acoustic resonator.

An off-beam quartz-enhanced photoacoustic spectroscopy (QEPAS) sensor was designed for ethylene detection using a distributed-feedback quantum cascade laser (QCL) operating in the mid-infrared around 11 µm. The acoustic microresonator configuration was experimentally optimized using an original open-cell photoacoustic setup with a MEMS microphone. Correction factors based on theoretical acoustic models were introduced in order to accurately describe the response of millimeter-sized acoustic resonators. The optimized QEPAS sensor exhibited a limit of detection of 60 ppb for 60 s integration, giving a NNEA of 4.8 × 10-8 W·cm-1·Hz-0.5.

Quartz Tuning Fork Resonance Tracking and application in Quartz Enhanced Photoacoustics Spectroscopy.

The quartz tuning fork (QTF) is a piezoelectric transducer with a high quality factor that was successfully employed in sensitive applications such as atomic force microscopy or Quartz-Enhanced Photo-Acoustic Spectroscopy (QEPAS). The variability of the environment (temperature, humidity) can lead to a drift of the QTF resonance. In most applications, regular QTF calibration is absolutely essential. Because the requirements vary greatly depending on the field of application, different characterization methods can be found in the literature. We present a review of these methods and compare them in terms of accuracy. Then, we further detail one technique, called Beat Frequency analysis, based on the transient response followed by heterodyning. This method proved to be fast and accurate. Further, we demonstrate the resonance tracking of the QTF while changing the temperature and the humidity. Finally, we integrate this characterization method in our Resonance Tracking (RT) QEPAS sensor and show the significant reduction of the signal drift compared to a conventional QEPAS sensor.

Quantum cascade lasers grown on silicon.

Technological platforms offering efficient integration of III-V semiconductor lasers with silicon electronics are eagerly awaited by industry. The availability of optoelectronic circuits combining III-V light sources with Si-based photonic and electronic components in a single chip will enable, in particular, the development of ultra-compact spectroscopic systems for mass scale applications. The first circuits of such type were fabricated using heterogeneous integration of semiconductor lasers by bonding the III-V chips onto silicon substrates. Direct epitaxial growth of interband III-V laser diodes on silicon substrates has also been reported, whereas intersubband emitters grown on Si have not yet been demonstrated. We report the first quantum cascade lasers (QCLs) directly grown on a silicon substrate. These InAs/AlSb QCLs grown on Si exhibit high performances, comparable with those of the devices fabricated on their native InAs substrate. The lasers emit near 11 µm, the longest emission wavelength of any laser integrated on Si. Given the wavelength range reachable with InAs/AlSb QCLs, these results open the way to the development of a wide variety of integrated sensors.

Room temperature continuous wave operation of InAs-based quantum cascade lasers at 15 µm.

We report low threshold InAs/AlSb quantum cascade lasers emitting near 15 µm. The devices are based on a vertical design similar to those employed previously in far infrared InAs-based QCLs, whereas the doping level of the active core is considerably decreased. The lasers exhibit a threshold current density as low as 730 A/cm2 in pulsed mode at room temperature and can operate in this regime up to 410K. The continuous wave regime of operation has been achieved in these devices at temperatures up to 20°C. The cw regime is demonstrated for InAs-based QCLs for the first time at room temperature.

Design of mid-IR and THz quantum cascade laser cavities with complete TM photonic bandgap.

We present the design of mid-infrared and THz quantum cascade laser cavities formed from planar photonic crystals with a complete in-plane photonic bandgap. The design is based on a honeycomb lattice, and achieves a full in-plane photonic gap for transverse-magnetic polarized light while preserving a connected pattern for efficient electrical injection. Candidate defects modes for lasing are identified. This lattice is then used as a model system to demonstrate a novel effect: under certain conditions - that are typically satisfied in the THz range - a complete photonic gap can be obtained by the sole patterning of the top metal contact. This possibility greatly reduces the required fabrication complexity and avoids potential damage of the semiconductor active region.