Investigation of the Multimechanism Laser Cleaning Dynamics for Rough Fused Silica Surfaces with Organic Contaminants: A Computational Simulation and Atomic Analysis.

The detrimental impact of organic contaminants on optical components poses a significant obstacle to high-energy laser systems. However, irregularities or defects on the surface of optical components during manufacturing can affect the process of organic contaminant removal. Thus, a comprehensive understanding of the intricate interplay among surface roughness, contaminant absorption, and ablation is essential to effectively address the challenges of laser-induced damage. In this study, a molecular dynamics approach was employed to investigate the interaction between laser-fused silica and contaminants and to analyze the influence of surface roughness on the removal of contaminants from fused silica. Research findings demonstrate that during laser irradiation, organic contaminants on the surface of mechanical components diffuse into the optical elements. As the laser flux increases, the contaminants gradually decompose into smaller molecular clusters. Additionally, the phenomenon of contaminant ablation is observed to consist of two distinct phases: the "Thermal expansion phase" and the "Thermal ablation phase." The study examines the impact of substrate roughness on the contaminant removal in these two phases. It is found that a higher surface roughness leads to stronger thermal expansion and vaporization of contaminants. With increasing roughness of the fused silica substrate, the corresponding van der Waals energy and pressure decrease under the same laser fluence, making the removal of contaminants easier. These results provide valuable insights into the interaction between laser irradiation and organic contaminants.

Influence of reactive oxygen species concentration and ambient temperature on the evolution of chemical bonds during plasma cleaning: a molecular dynamics simulation.

The research on plasma chemistry involved in the formation and dissociation of abundant chemical bonds is fundamental to developing plasma cleaning. To understand the influence of reactive oxygen species' concentration and ambient temperature on the evolution behavior of the chemical bond during plasma cleaning, microscopic reaction models between organic contaminants and reactive oxygen species were established and performed by reactive molecular dynamics. Dibutyl phthalate, as a representative organic contaminant, was selected as the research object. The simulation results suggested that hydrogen bonds between hydroxyl radicals reduced the mobility of reactive species, resulting in the cleaning ability of hydroxyl radicals being much lower than atomic oxygen and ozone radicals. The concentration of reactive species dominated the efficiency of plasma cleaning, and the increase in ambient temperature further improved the cleaning ability. C-H, C-C and C-O bonds were gradually oxidized to C[double bond, length as m-dash]C, C-O, C[double bond, length as m-dash]O and O-H bonds by hydrogen abstraction reaction during the reaction of reactive species with organic contaminants. An increase in ambient temperature induced the possibility of benzene ring destruction under the action of reactive species, which was considered a method of complete dissociation of aromatic hydrocarbons.

Spectral diagnosis of in situ plasma cleaning in large-aperture optical components: reactive species characterization and prediction of cleaning.

The damage of large-aperture optical components caused by organic contamination limits the performance improvement of high-power laser facilities. We propose an in situ plasma cleaning technology to remove the organic contaminants on large-aperture optical components, demonstrated by the simulated equipment. The cleaning characteristics of the equipment were investigated by spectral diagnosis. The cleaning capability coefficient was defined to evaluate the performance of the plasma equipment. Then diffusion properties of reactive species along the surface of optical components were elucidated under various charge parameters, including powers, source frequencies, and gas pressures. We discuss the underlying cleaning mechanism for removing organic contaminants. A new plasma cleaning model is established to predict the treatment time with the cleaning capability coefficient.

Graphitization Behavior of Single Crystal Diamond for the Application in Nano-Metric Cutting.

BACKGROUND: Graphitization behavior of diamond has received an increasing interest in nanoscale machining of some hard and brittle materials. Diamond has always been an important and excellent tool material in cutting area. However, the graphitization of the diamond tool is inevitable when it was used in special conditions. It is indicated that the graphitization of diamond crystal has great influence on the wear resistance of diamond cutting tool. The graphitization behavior needs to be investigated extensively in nanoscale with an atomic view. Molecular dynamics simulation provides a useful tool for understanding of the graphitization mechanism of diamond. The investigation on graphi-tization behavior of single crystal diamond can also provide a useful reference for the application of diamond cutting tool.Materials and. METHODS: In this paper, a molecular dynamics (MD) diamond crystal model is built to examine the graphitization behavior of diamond under various conditions. The sixfold ring method was employed to identify the structural characteristics of graphite and diamond. The effects of temperature and crystal orientation on the graphitization of diamond have been revealed. Considering the effect of temperature, the anisotropy of diamond graphitization against various crystal planes is presented and discussed carefully. The nano-metric cutting model of diamond tool evaluated by the sixfold ring meth-od also proves the graphitization mechanisms in atomic view. RESULTS: Results indicate that the sixfold ring method is a reliable method to evaluate the graphitization behavior of diamond crystal. There exists a critical temperature of the graphitization of diamond. The results also show that {111} plane is more easy to get graphitization as compared with other crystal planes. However, {100} plane of diamond model presents the highest anti-graphitization property. CONCLUSION: The obtained results have provided the in-depth understanding on the wear of diamond tool in nano-metric machining and underpin the development of diamond cutting tool.

Multiscale Analyses of Surface Failure Mechanism of Single-Crystal Silicon during Micro-Milling Process.

This article presents an experimental investigation on ductile-mode micro-milling of monocrystalline silicon using polycrystalline diamond (PCD) end mills. Experimental results indicate that the irregular fluctuation of cutting force always induces machined surface failure, even in ductile mode. The internal mechanism has not been investigated so far. The multiscale discrete dislocation plasticity framework was used to predict the dislocation structure and strain evolution under the discontinuous cutting process. The results showed that a mass of dislocations can be generated and affected in silicon crystal. The dislocation density, multiplication rate, and microstructure strongly depend on the milling conditions. In particular, transient impulse load can provide a great potential for material strength by forming dislocations entanglement structure. The continuous irregular cutting process can induce persistent slip bands (PSBs) in substrate surface, which would result in stress concentration and inhomogeneous deformation within grains.

Anisotropy of Single-Crystal Silicon in Nanometric Cutting.

The anisotropy exhibited by single-crystal silicon in nanometric cutting is very significant. In order to profoundly understand the effect of crystal anisotropy on cutting behaviors, a large-scale molecular dynamics model was conducted to simulate the nanometric cutting of single-crystal silicon in the (100)[0-10], (100)[0-1-1], (110)[-110], (110)[00-1], (111)[-101], and (111)[-12-1] crystal directions in this study. The simulation results show the variations of different degrees in chip, subsurface damage, cutting force, and friction coefficient with changes in crystal plane and crystal direction. Shear deformation is the formation mechanism of subsurface damage, and the direction and complexity it forms are the primary causes that result in the anisotropy of subsurface damage. Structurally, chips could be classified into completely amorphous ones and incompletely amorphous ones containing a few crystallites. The formation mechanism of the former is high-pressure phase transformation, while the latter is obtained under the combined action of high-pressure phase transformation and cleavage. Based on an analysis of the material removal mode, it can be found that compared with the other crystal direction on the same crystal plane, the (100)[0-10], (110)[-110], and (111)[-101] directions are more suitable for ductile cutting.

Dislocation Dynamics-Based Modeling and Simulations of Subsurface Damages Microstructure of Orthogonal Cutting of Titanium Alloy.

In this work, a novel method is put forward to quantitatively simulate the subsurface damages microstructural alteration of titanium alloy components subjected to microscale cutting. A trans-scale numerical framework is conducted with the purpose of revealing the underlying influence mechanism of tool structure parameters on subsurface dislocation configurations using a dislocation dynamics-based model, which considers both dislocation structural transformation and grain refining. Results showed that the developed framework not only captured the essential features of workpiece microstructure, but also predicted the subsurface damages layer states and their modifications. A series of defects were found in the material subsurface during the orthogonal cutting of titanium alloy, such as edge and screw dislocations, junctions, parallel slip lines, intersection dislocation bands, vacancy defects, and refinement grains. Particularly, in the process of micro-cutting, the depth of subsurface damages layer increased significantly with cutting length at the beginning, and then remained unchanged in the stable removal phase. Moreover, smaller edge radius and larger rake angle can greatly weaken the squeezing action and heat diffusion effect between the tool tip and workpiece, which further prevents the formation of subsurface defects and enhances finished surface quality. In addition, although increasing tool clearance angle could drastically lighten the thickness of subsurface damages layer, it is noteworthy that its performance would be decreased significantly when the clearance angle was greater than or equal to 5°. The micro-end-milling experiment was performed to validate the existing simulation results, and the results show very good agreement.

Influence of cutting parameters on the depth of subsurface deformed layer in nano-cutting process of single crystal copper.

Large-scale molecular dynamics simulation is performed to study the nano-cutting process of single crystal copper realized by single-point diamond cutting tool in this paper. The centro-symmetry parameter is adopted to characterize the subsurface deformed layers and the distribution and evolution of the subsurface defect structures. Three-dimensional visualization and measurement technology are used to measure the depth of the subsurface deformed layers. The influence of cutting speed, cutting depth, cutting direction, and crystallographic orientation on the depth of subsurface deformed layers is systematically investigated. The results show that a lot of defect structures are formed in the subsurface of workpiece during nano-cutting process, for instance, stair-rod dislocations, stacking fault tetrahedron, atomic clusters, vacancy defects, point defects. In the process of nano-cutting, the depth of subsurface deformed layers increases with the cutting distance at the beginning, then decreases at stable cutting process, and basically remains unchanged when the cutting distance reaches up to 24 nm. The depth of subsurface deformed layers decreases with the increase in cutting speed between 50 and 300 m/s. The depth of subsurface deformed layer increases with cutting depth, proportionally, and basically remains unchanged when the cutting depth reaches over 6 nm.

Adsorption of tripeptide RGD on rutile TiO(2) nanotopography surface in aqueous solution.

Molecular dynamics simulations were carried out to investigate the adsorption mechanisms of tripeptide Arg-Gly-Asp (RGD) on the nanotopography and perfect rutile TiO(2) (110) surfaces in aqueous solution. It is shown that the amino groups (NH(2) and NH3+) and carboxyl group (COO(-)) of RGD are the main groups bonding to hydrophilic TiO(2) surface by electrostatic and van der Waals interactions. It is also demonstrated that RGD adsorbs much more rapidly and stably on the nanotopography surface than the perfect surface. On the hydrophilic TiO(2) surface, the water molecules occupy the adsorption sites to form hydration layers, which have a significant influence on RGD adsorption. On the perfect surface, since the fivefold titanium atom is surrounded by surface bridging oxygen atoms above it and has a water molecule bonding to it, the amino group NH(2) is the adsorption group. However, because the pit surface exposes more adsorption sites and has higher surface energy, RGD can adsorb rapidly on the surfaces by amino groups NH(2) and NH3+, and the carboxyl group COO(-) may edge out the adsorbed water molecules and bond to the surface titanium atom. Moreover, the surface with higher surface energy has more adsorption energy of RGD.