Manufacture reliability assessment of Si photonic foundry fabricated slow-light photonic crystal waveguides.

Single-line-defect (W1) photonic crystal waveguides hold significant promise for various applications in integrated photonics due to their ability to induce slow light across wide photonic band ranges. Ensuring the manufacturing reliability of these devices is paramount for their practical implementation, as they tend to be highly sensitive to fabrication deviations. In this study, we investigated the manufacturing reliability of photonic crystal waveguides fabricated at the Albany Nanotech Complex foundry by comparing the consistency of band-edge locations and group indices across 14 chips. We also provide FIB images of the fabricated photonic crystals allowing an analysis of the sidewall quality of the holes.

Transcriptome-guided metabolic network analysis reveals rearrangements of carbon flux distribution in Neisseria gonorrhoeae during neutrophil co-culture.

The ability of bacterial pathogens to metabolically adapt to the environmental conditions of their hosts is critical to both colonization and invasive disease. Infection with Neisseria gonorrhoeae (the gonococcus, Gc) is characterized by the influx of neutrophils [polymorphonuclear leukocytes (PMNs)], which fail to clear the bacteria and make antimicrobial products that can exacerbate tissue damage. The inability of the human host to clear Gc infection is particularly concerning in light of the emergence of strains that are resistant to all clinically recommended antibiotics. Bacterial metabolism represents a promising target for the development of new therapeutics against Gc. Here, we generated a curated genome-scale metabolic network reconstruction (GENRE) of Gc strain FA1090. This GENRE links genetic information to metabolic phenotypes and predicts Gc biomass synthesis and energy consumption. We validated this model with published data and in new results reported here. Contextualization of this model using the transcriptional profile of Gc exposed to PMNs revealed substantial rearrangements of Gc central metabolism and induction of Gc nutrient acquisition strategies for alternate carbon source use. These features enhanced the growth of Gc in the presence of neutrophils. From these results, we conclude that the metabolic interplay between Gc and PMNs helps define infection outcomes. The use of transcriptional profiling and metabolic modeling to reveal new mechanisms by which Gc persists in the presence of PMNs uncovers unique aspects of metabolism in this fastidious bacterium, which could be targeted to block infection and thereby reduce the burden of gonorrhea in the human population. IMPORTANCE The World Health Organization designated Gc as a high-priority pathogen for research and development of new antimicrobials. Bacterial metabolism is a promising target for new antimicrobials, as metabolic enzymes are widely conserved among bacterial strains and are critical for nutrient acquisition and survival within the human host. Here we used genome-scale metabolic modeling to characterize the core metabolic pathways of this fastidious bacterium and to uncover the pathways used by Gc during culture with primary human immune cells. These analyses revealed that Gc relies on different metabolic pathways during co-culture with human neutrophils than in rich media. Conditionally essential genes emerging from these analyses were validated experimentally. These results show that metabolic adaptation in the context of innate immunity is important to Gc pathogenesis. Identifying the metabolic pathways used by Gc during infection can highlight new therapeutic targets for drug-resistant gonorrhea.

Integrated visible-light liquid-crystal-based phase modulators.

In this work, an integrated liquid-crystal-based phase modulator operating at visible wavelengths was developed and experimentally demonstrated. A visible-light silicon-nitride-based 300-mm-wafer foundry platform and a liquid-crystal integration process were developed to leverage the birefringence of liquid crystal to actively tune the effective index of a section of silicon-nitride waveguide and induce a phase shift over its length. The device was experimentally shown to achieve a 41π phase shift within 4.8 Vpp for a 500-µm-long modulator, which means that a 2π phase shifter would need to be only 24.4 µm long. This device is a compact and low-power solution to the challenge of integrated phase modulation in silicon nitride and paves the way for future low-power small-form-factor integrated systems at visible wavelengths.

Variable Expression of Opa Proteins by Neisseria gonorrhoeae Influences Bacterial Association and Phagocytic Killing by Human Neutrophils.

Neisseria gonorrhoeae infection is characterized by local and abundant recruitment of neutrophils. Despite neutrophils' antimicrobial activities, viable N. gonorrhoeae is recovered from infected individuals, leading to the question of how N. gonorrhoeae survives neutrophil attack. One feature impacting N. gonorrhoeae-neutrophil interactions is the phase-variable opacity-associated (Opa) proteins. Most Opa proteins engage human carcinoembryonic antigen-related cell adhesion molecules (CEACAMs) to facilitate bacterial binding and invasion. Neutrophils express two transmembrane CEACAMs, CEACAM1 and the granulocyte-specific CEACAM3. While N. gonorrhoeae isolated from infected individuals is frequently Opa+, expression of OpaD from strain FA1090, which interacts with CEACAMs 1 and 3, is associated with reduced N. gonorrhoeae survival after exposure to human neutrophils. In this study, we hypothesized that the receptor-binding capability of individual Opa proteins impacts bacterial survival in the presence of neutrophils. To test this hypothesis, we introduced opa genes that are constitutively expressed into a derivative of strain FA1090 with all 11 opa genes deleted. The engineered genes encode Opa proteins that bind CEACAM1 and -3, CEACAM1 but not CEACAM3, or neither CEACAM1 nor -3. N. gonorrhoeae expressing CEACAM3-binding Opa proteins survived significantly less well than bacteria expressing other Opa proteins when exposed to primary human neutrophils. The CEACAM3-binding N. gonorrhoeae had significantly greater association with and internalization by neutrophils. However, once internalized, bacteria were similarly killed inside neutrophils, regardless of Opa expression. Furthermore, Opa expression did not significantly impact neutrophil granule mobilization. Our findings indicate that the extent to which Opa proteins mediate nonopsonic binding is the predominant determinant of bacterial survival from neutrophils. IMPORTANCE Neisseria gonorrhoeae, the cause of gonorrhea, is an urgent-threat pathogen due to increasing numbers of infections and increased antibiotic resistance. Many surface components of N. gonorrhoeae are phase variable, including the Opa protein family of adhesins and invasins. While Opa protein expression is selected for in vivo, bacteria expressing some Opa proteins are readily killed by neutrophils, which are recruited to sites of infection. The reason for this discrepancy has remained unresolved. Our work shows that Opa-dependent differences in bacterial survival after exposure to primary human neutrophils correlates with Opa-dependent bacterial binding and phagocytosis. These findings underscore how the ability of N. gonorrhoeae to change Opa expression through phase variation contributes to bacterial resistance to neutrophil clearance.

Monolithically integrated erbium-doped tunable laser on a CMOS-compatible silicon photonics platform.

A tunable laser source is a crucial photonic component for many applications, such as spectroscopic measurements, wavelength division multiplexing (WDM), frequency-modulated light detection and ranging (LIDAR), and optical coherence tomography (OCT). In this article, we demonstrate the first monolithically integrated erbium-doped tunable laser on a complementary-metal-oxide-semiconductor (CMOS)-compatible silicon photonics platform. Erbium-doped Al2O3 sputtered on top is used as a gain medium to achieve lasing. The laser achieves a tunability from 1527 nm to 1573 nm, with a >40 dB side mode suppression ratio (SMSR). The wide tuning range (46 nm) is realized with a Vernier cavity, formed by two Si3N4 microring resonators. With 107 mW on-chip 980 nm pump power, up to 1.6 mW output lasing power is obtained with a 2.2% slope efficiency. The maximum output power is limited by pump power. Fine tuning of the laser wavelength is demonstrated by using the gain cavity phase shifter. Signal response times are measured to be around 200 µs and 35 µs for the heaters used to tune the Vernier rings and gain cavity longitudinal mode, respectively. The linewidth of the laser is 340 kHz, measured via a self-delay heterodyne detection method. Furthermore, the laser signal is stabilized by continuous locking to a mode-locked laser (MLL) over 4900 seconds with a measured peak-to-peak frequency deviation below 10 Hz.

Publisher Correction: Integrating photonics with silicon nanoelectronics for the next generation of systems on a chip.

In this Letter, owing to an error during the production process, the author affiliations were listed incorrectly. Affiliation number 5 (Colleges of Nanoscale Science and Engineering, State University of New York (SUNY)) was repeated, and affiliation numbers 6-8 were incorrect. In addition, the phrase "two oxide thickness variants" should have been "two gate oxide thickness variants". These errors have all been corrected online.

Integrating photonics with silicon nanoelectronics for the next generation of systems on a chip.

Electronic and photonic technologies have transformed our lives-from computing and mobile devices, to information technology and the internet. Our future demands in these fields require innovation in each technology separately, but also depend on our ability to harness their complementary physics through integrated solutions1,2. This goal is hindered by the fact that most silicon nanotechnologies-which enable our processors, computer memory, communications chips and image sensors-rely on bulk silicon substrates, a cost-effective solution with an abundant supply chain, but with substantial limitations for the integration of photonic functions. Here we introduce photonics into bulk silicon complementary metal-oxide-semiconductor (CMOS) chips using a layer of polycrystalline silicon deposited on silicon oxide (glass) islands fabricated alongside transistors. We use this single deposited layer to realize optical waveguides and resonators, high-speed optical modulators and sensitive avalanche photodetectors. We integrated this photonic platform with a 65-nanometre-transistor bulk CMOS process technology inside a 300-millimetre-diameter-wafer microelectronics foundry. We then implemented integrated high-speed optical transceivers in this platform that operate at ten gigabits per second, composed of millions of transistors, and arrayed on a single optical bus for wavelength division multiplexing, to address the demand for high-bandwidth optical interconnects in data centres and high-performance computing3,4. By decoupling the formation of photonic devices from that of transistors, this integration approach can achieve many of the goals of multi-chip solutions 5 , but with the performance, complexity and scalability of 'systems on a chip'1,6-8. As transistors smaller than ten nanometres across become commercially available 9 , and as new nanotechnologies emerge10,11, this approach could provide a way to integrate photonics with state-of-the-art nanoelectronics.

Broadband 2-µm emission on silicon chips: monolithically integrated Holmium lasers.

Laser sources in the mid-infrared are of great interest due to their wide applications in detection, sensing, communication and medicine. Silicon photonics is a promising technology which enables these laser devices to be fabricated in a standard CMOS foundry, with the advantages of reliability, compactness, low cost and large-scale production. In this paper, we demonstrate a holmium-doped distributed feedback laser monolithically integrated on a silicon photonics platform. The Al2O3:Ho3+ glass is used as gain medium, which provides broadband emission around 2 µm. By varying the distributed feedback grating period and Al2O3:Ho3+ gain layer thickness, we show single mode laser emission at wavelengths ranging from 2.02 to 2.10 µm. Using a 1950 nm pump, we measure a maximum output power of 15 mW, a slope efficiency of 2.3% and a side-mode suppression ratio in excess of 50 dB. The introduction of a scalable monolithic light source emitting at > 2 µm is a significant step for silicon photonic microsystems operating in this highly promising wavelength region.

Octave-spanning coherent supercontinuum generation in silicon on insulator from 1.06 µm to beyond 2.4 µm.

Efficient complementary metal-oxide semiconductor-based nonlinear optical devices in the near-infrared are in strong demand. Due to two-photon absorption in silicon, however, much nonlinear research is shifting towards unconventional photonics platforms. In this work, we demonstrate the generation of an octave-spanning coherent supercontinuum in a silicon waveguide covering the spectral region from the near- to shortwave-infrared. With input pulses of 18 pJ in energy, the generated signal spans the wavelength range from the edge of the silicon transmission window, approximately 1.06 to beyond 2.4 µm, with a -20 dB bandwidth covering 1.124-2.4 µm. An octave-spanning supercontinuum was also observed at the energy levels as low as 4 pJ (-35 dB bandwidth). We also measured the coherence over an octave, obtaining , in good agreement with the simulations. In addition, we demonstrate optimization of the third-order dispersion of the waveguide to strengthen the dispersive wave and discuss the advantage of having a soliton at the long wavelength edge of an octave-spanning signal for nonlinear applications. This research paves the way for applications, such as chip-scale precision spectroscopy, optical coherence tomography, optical frequency metrology, frequency synthesis and wide-band wavelength division multiplexing in the telecom window.

High-power thulium lasers on a silicon photonics platform.

Mid-infrared laser sources are of great interest for various applications, including light detection and ranging, spectroscopy, communication, trace-gas detection, and medical sensing. Silicon photonics is a promising platform that enables these applications to be integrated on a single chip with low cost and compact size. Silicon-based high-power lasers have been demonstrated at 1.55 µm wavelength, while in the 2 µm region, to the best of our knowledge, high-power, high-efficiency, and monolithic light sources have been minimally investigated. In this Letter, we report on high-power CMOS-compatible thulium-doped distributed feedback and distributed Bragg reflector lasers with single-mode output powers up to 267 and 387 mW, and slope efficiencies of 14% and 23%, respectively. More than 70 dB side-mode suppression ratio is achieved for both lasers. This work extends the applicability of silicon photonic microsystems in the 2 µm region.