Giant enhancement of the optical second-harmonic emission of WSe(2) monolayers by laser excitation at exciton resonances.

We show that the light-matter interaction in monolayer WSe_{2} is strongly enhanced when the incoming electromagnetic wave is in resonance with the energy of the exciton states of strongly Coulomb bound electron-hole pairs below the electronic band gap. We perform second harmonic generation (SHG) spectroscopy as a function of laser energy and polarization at T=4 K. At the exciton resonance energies we record an enhancement by up to 3 orders of magnitude of the SHG efficiency, due to the unusual combination of electric dipole and magnetic dipole transitions. The energy and parity of the exciton states showing the strong resonance effects are identified in 1- and 2-photon photoluminescence excitation experiments, corroborated by first principles calculations. Targeting the identified exciton states in resonant 2-photon excitation allows us to maximize k-valley coherence and polarization.

Gate control of the electron spin-diffusion length in semiconductor quantum wells.

The spin diffusion length is a key parameter to describe the transport properties of spin polarized electrons in solids. Electrical spin injection in semiconductor structures, a major issue in spintronics, critically depends on this spin diffusion length. Gate control of the spin diffusion length could be of great importance for the operation of devices based on the electric field manipulation and transport of electron spin. Here we demonstrate that the spin diffusion length in a GaAs quantum well can be electrically controlled. Through the measurement of the spin diffusion coefficient by spin grating spectroscopy and of the spin relaxation time by time-resolved optical orientation experiments, we show that the diffusion length can be increased by more than 200% with an applied gate voltage of 5 V. These experiments allow at the same time the direct simultaneous measurements of both the Rashba and Dresselhaus spin-orbit splittings.

Surfactant-free CZTS nanoparticles as building blocks for low-cost solar cell absorbers.

A process route for the fabrication of solvent-redispersible, surfactant-free Cu2ZnSnS4 (CZTS) nanoparticles has been designed with the objective to have the benefit of a simple sulfide source which advantageously acts as (i) a complexing agent inhibiting crystallite growth, (ii) a surface additive providing redispersion in low ionic strength polar solvents and (iii) a transient ligand easily replaced by an carbon-free surface additive. This multifunctional use of the sulfide source has been achieved through a fine tuning of ((Cu²âº)(a)(Zn²âº)(b)(Sn4⁺)(c)(Tu)(d)(OH⁻)(e))(t⁺), Tu = thiourea) oligomers, leading after temperature polycondensation and S²â» exchange to highly concentrated (c > 100 g l⁻¹), stable, ethanolic CZTS dispersions. The good electronic properties and low-defect concentration of the sintered, crack-free CZTSe films resulting from these building blocks was shown by photoluminescence investigation, making these building blocks interesting for low-cost, high-performance CZTSe solar cells.

Dark-bright mixing of interband transitions in symmetric semiconductor quantum dots.

In photoluminescence spectra of symmetric [111] grown GaAs/AlGaAs quantum dots in longitudinal magnetic fields applied along the growth axis, we observe in addition to the expected bright states also nominally dark transitions for both charged and neutral excitons. We uncover a strongly nonmonotonic, sign-changing field dependence of the bright neutral exciton splitting resulting from the interplay between exchange and Zeeman effects. Our theory shows quantitatively that these surprising experimental results are due to magnetic-field-induced ±3/2 heavy-hole mixing, an inherent property of systems with C(3v) point-group symmetry.

Full electrical control of the electron spin relaxation in GaAs quantum wells.

The electron spin dynamics in (111)-oriented GaAs/AlGaAs quantum wells is studied by time-resolved photoluminescence spectroscopy. By applying an external electric field of 50 kV/cm a two-order of magnitude increase of the spin relaxation time can be observed reaching values larger than 30 ns; this is a consequence of the electric field tuning of the spin-orbit conduction band splitting which can almost vanish when the Rashba term compensates exactly the Dresselhaus one. The measurements under a transverse magnetic field demonstrate that the electron spin relaxation time for the three space directions can be tuned simultaneously with the applied electric field.

Highly-crystallized quaternary chalcopyrite nanocrystals via a high-temperature dissolution-reprecipitation route.

Quaternary chalcopyrite (Cu(2)CoSnS(4), Cu(2)ZnSnS(4)) nanocrystals displaying high crystallization and controlled morphology were synthesized via a high-temperature growth regime achieved by dissolution-reprecipitation of tailored ultrafine precursors in the temperature range 400-500 °C.

Hole-nuclear spin interaction in quantum dots.

We have measured the carrier spin dynamics in p-doped InAs/GaAs quantum dots by pump-probe and time-resolved photoluminescence experiments. We obtained experimental evidence of the hyperfine interaction between hole and nuclear spins. In the absence of an external magnetic field, our calculations based on dipole-dipole coupling between the hole and the quantum dot nuclei lead to a hole-spin dephasing time for an ensemble of dots of 14 ns, in close agreement with experiments.

Room-temperature defect-engineered spin filter based on a non-magnetic semiconductor.

Generating, manipulating and detecting electron spin polarization and coherence at room temperature is at the heart of future spintronics and spin-based quantum information technology. Spin filtering, which is a key issue for spintronic applications, has been demonstrated by using ferromagnetic metals, diluted magnetic semiconductors, quantum point contacts, quantum dots, carbon nanotubes, multiferroics and so on. This filtering effect was so far restricted to a limited efficiency and primarily at low temperatures or under a magnetic field. Here, we provide direct and unambiguous experimental proof that an electron-spin-polarized defect, such as a Ga(i) self-interstitial in dilute nitride GaNAs, can effectively deplete conduction electrons with an opposite spin orientation and can thus turn the non-magnetic semiconductor into an efficient spin filter operating at room temperature and zero magnetic field. This work shows the potential of such defect-engineered, switchable spin filters as an attractive alternative to generate, amplify and detect electron spin polarization at room temperature without a magnetic material or external magnetic fields.

Electron spin control in dilute nitride semiconductors.

We report on a study of spin-dependent recombination processes (SDR) for conduction band electrons on deep paramagnetic centers in a series of GaAs(1-y)N(y) epilayers by time-resolved optical orientation experiments. We demonstrate that this dilute nitride compound can be used as an effective electron spin filter under a polarized optical excitation of appropriate intensity. This optimum intensity can moreover be controlled by adjusting the nitrogen composition in the layer.