Gigahertz semiconductor laser at a center wavelength of 2 µm in single and dual-comb operation.

Dual-comb lasers are a new class of ultrafast lasers that enable fast, accurate and sensitive measurements without any mechanical delay lines. Here, we demonstrate a 2-µm laser called MIXSEL (Modelocked Integrated eXternal-cavity Surface Emitting Laser), based on an optically pumped passively modelocked semiconductor thin disk laser. Using III-V semiconductor molecular beam epitaxy, we achieve a center wavelength in the shortwave infrared (SWIR) range by integrating InGaSb quantum well gain and saturable absorber layers onto a highly reflective mirror. The cavity setup consists of a linear straight configuration with the semiconductor MIXSEL chip at one end and an output coupler a few centimeters away, resulting in an optical comb spacing between 1 and 10 GHz. This gigahertz pulse repetition rate is ideal for ambient pressure gas spectroscopy and dual-comb measurements without requiring additional stabilization. In single-comb operation, we generate 1.5-ps pulses with an average output power of 28 mW, a pulse repetition rate of 4 GHz at a center wavelength of 2.035 µm. For dual-comb operation, we spatially multiplex the cavity using an inverted bisprism operated in transmission, achieving an adjustable pulse repetition rate difference estimated up to 4.4 MHz. The resulting heterodyne beat reveals a low-noise down-converted microwave frequency comb, facilitating coherent averaging.

Single-cavity dual-modelocked 2.36-µm laser.

We present the first dual-modelocked femtosecond oscillator operating beyond 2 µm wavelength. This new class of laser is based on a Cr:ZnS gain medium, an InGaSb SESAM for modelocking, and a two-surface reflective device for spatial duplexing of the two modelocked pulse trains (combs). The laser operates at 2.36 µm, and for each comb, we have achieved a FWHM spectral bandwidth of 30 nm, an average power of over 200 mW, and a pulse duration close to 200 fs. The nominal repetition rate is 242 MHz with a sufficiently large repetition rate difference of 4.17 kHz. We also found that the laser is able to produce stable modelocked pulses over a wide range of output powers. This result represents a significant step towards realizing dual-comb applications directly above 2 µm using a single free-running laser.

High-power low-noise 2-GHz femtosecond laser oscillator at 2.4†µm.

Femtosecond lasers with high repetition rates are attractive for spectroscopic applications with high sampling rates, high power per comb line, and resolvable lines. However, at long wavelengths beyond 2 µm, current laser sources are either limited to low output power or repetition rates below 1 GHz. Here we present an ultrafast laser oscillator operating with high output power at multi-GHz repetition rate. The laser produces transform-limited 155-fs pulses at a repetition rate of 2 GHz, and an average power of 0.8 W, reaching up to 0.7 mW per comb line at the center wavelength of 2.38 µm. We have achieved this milestone via a Cr2+-doped ZnS solid-state laser modelocked with an InGaSb/GaSb SESAM. The laser is stable over several hours of operation. The integrated relative intensity noise is 0.15% rms for [10 Hz, 100 MHz], and the laser becomes shot noise limited (-160 dBc/Hz) at frequencies above 10 MHz. Our timing jitter measurements reveal contributions from pump laser noise and relaxation oscillations, with a timing jitter of 100 fs integrated over [3 kHz, 100 MHz]. These results open up a path towards fast and sensitive spectroscopy directly above 2 µm.

High average output power from a backside-cooled 2-µm InGaSb VECSEL with full gain characterization.

We compare the gain and continuous wave lasing properties of two InGaSb-based vertical external cavity surface emitting lasers (InGaSb VECSEL) with different heat management approaches operating at a center wavelength of around 2µ m. To date, intracavity heatspreaders have been required for good average output power, which have many trade-offs, especially for passive modelocking. Here we demonstrate a record high average output power of 810 mW without an intracavity heatspreader using a backside-cooled non-resonant VECSEL chip optimized for modelocking. In addition, we introduce and demonstrate an optical characterization for a wavelength range of 1.9 to 3µ m to precisely measure wavelength-dependent gain saturation and spectral gain. Gain characteristics are measured as a function of wavelength, fluence, pump power and temperature. Small signal gain of more than 5%, small saturation fluences and broad gain bandwidths of more than 90 nm are demonstrated. In comparison to a commercial VECSEL chip with an intracavity heatspreader, we have obtained similar average output power even though our VECSEL chip is designed for antiresonance.

Full optical SESAM characterization methods in the 1.9 to 3-µm wavelength regime.

Semiconductor saturable absorber mirrors (SESAMs) are widely used for modelocking of various ultrafast lasers. The growing interest for SESAM-modelocked lasers in the short-wave infrared and mid-infrared regime requires precise characterization of SESAM parameters. Here, we present two SESAM characterization setups for a wavelength range of 1.9 to 3 µm to precisely measure both nonlinear reflectivity and time-resolved recovery dynamics. For the nonlinear reflectivity measurement, a high accuracy (<0.04%) over a wide fluence range (0.1-1500 µJ/cm2) is achieved. Time-resolved pump-probe measurements have a resolution of about 100 fs and a scan range of up to 680 ps. Using the two setups, we have fully characterized three different GaSb-SESAMs at an operation wavelength of 2.05 µm fabricated in the FIRST lab at ETH Zurich. The results show excellent performance suitable for modelocking diode-pumped solid-state and semiconductor disk lasers. We have measured saturation fluences of around 4 µJ/cm2, modulation depths varying from 1% to 2.4%, low non-saturable losses (∼ 0.2%) and sufficiently fast recovery times (< 32 ps). The predicted influence of Auger recombination in the GaSb material system is also investigated.

Real-time high-resolution mid-infrared optical coherence tomography.

The potential for improving the penetration depth of optical coherence tomography systems by using light sources with longer wavelengths has been known since the inception of the technique in the early 1990s. Nevertheless, the development of mid-infrared optical coherence tomography has long been challenged by the maturity and fidelity of optical components in this spectral region, resulting in slow acquisition, low sensitivity, and poor axial resolution. In this work, a mid-infrared spectral-domain optical coherence tomography system operating at a central wavelength of 4 µm and an axial resolution of 8.6 µm is demonstrated. The system produces two-dimensional cross-sectional images in real time enabled by a high-brightness 0.9- to 4.7-µm mid-infrared supercontinuum source with a pulse repetition rate of 1 MHz for illumination and broadband upconversion of more than 1-µm bandwidth from 3.58-4.63 µm to 820-865 nm, where a standard 800-nm spectrometer can be used for fast detection. The images produced by the mid-infrared system are compared with those delivered by a state-of-the-art ultra-high-resolution near-infrared optical coherence tomography system operating at 1.3 µm, and the potential applications and samples suited for this technology are discussed. In doing so, the first practical mid-infrared optical coherence tomography system is demonstrated, with immediate applications in real-time non-destructive testing for the inspection of defects and thickness measurements in samples that exhibit strong scattering at shorter wavelengths.

Thermal noise in mid-infrared broadband upconversion detectors.

Low noise detection with state-of-the-art mid-infrared (MIR) detectors (e.g., PbS, PbSe, InSb, HgCdTe) is a primary challenge owing to the intrinsic thermal background radiation of the low bandgap detector material itself. However, researchers have employed frequency upconversion based detectors (UCD), operable at room temperature, as a promising alternative to traditional direct detection schemes. UCD allows for the use of a low noise silicon-CCD/camera to improve the SNR. Using UCD, the noise contributions from the nonlinear material itself should be evaluated in order to estimate the limits of the noise-equivalent power of an UCD system. In this article, we rigorously analyze the optical power generated by frequency upconversion of the intrinsic black-body radiation in the nonlinear material itself due to the crystals residual emissivity, i.e. absorption. The thermal radiation is particularly prominent at the optical absorption edge of the nonlinear material even at room temperature. We consider a conventional periodically poled lithium niobate (PPLN) based MIR-UCD for the investigation. The UCD is designed to cover a broad spectral range, overlapping with the entire absorption edge of the PPLN (3.5 - 5 µm). Finally, an upconverted thermal radiation power of ~30 pW at room temperature (~30°C) and a maximum of ~70 pW at 120°C of the PPLN crystal are measured for a CW mixing beam of power ~60 W, supporting a good quantitative agreement with the theory. The analysis can easily be extended to other popular nonlinear conversion processes including OPO, DFG, and SHG.

Ultra-broadband mid-wave-IR upconversion detection.

In this Letter, we demonstrate efficient room temperature detection of ultra-broadband mid-wave-infrared (MWIR) light with an almost flat response over more than 1200 nm, exploiting an efficient nonlinear upconversion technique. Black-body radiation from a hot soldering iron rod is used as the IR test source. Placing a 20 mm long periodically poled lithium niobate crystal in a compact intra-cavity setup (>20 W CW pump at 1064 nm), MWIR wavelengths ranging from 3.6 to 4.85 µm are upconverted to near-infrared (NIR) wavelengths (820-870 nm). The NIR light is detected using a standard low-noise silicon-based camera/grating spectrometer. The proposed technique allows high conversion efficiency over a wider bandwidth without any need for a shorter crystal length. Different analytical predictions and numerical simulations are performed a priori to support the experimental demonstrations.

Plastic fiber design for THz generation through wavelength translation.

We report on an all-fiber terahertz (THz) radiation source by exploiting nonlinear parametric process in a theoretically designed microstructured-core double-clad plastic fiber (MC-DCPF). The required phase-matching condition is satisfied through suitable tailoring of the fiber dispersion and nonlinear properties at the pump wavelength of a high-power CO2 laser, with a CO laser of much lower power acting as a seed concomitantly. Our simulated results reveal that a THz radiation source at the frequency of ∼3 THz could be realized with a 3-dB phase-matching band width of 2.13 GHz in a 65-m-long optimized MC-DCPF. Maximum power conversion efficiency >1% is realizable even after including the material loss.