DAC-less PAM-4 generation in the O-band using a silicon Mach-Zehnder modulator.

We demonstrate 20-Gb/s 4-level pulse amplitude modulation (PAM-4) signal generation using a silicon Mach-Zehnder modulator (MZM) in the O-band. The modulator is driven by two independent binary streams, and the PAM-4 signal is thus generated directly on the chip, avoiding the use of power-hungry digital-to-analog converters (DACs). With optimized amplitude levels of the binary signals applied to the two arms of the MZM, a pre-forward error correction (FEC) bit-error rate (BER) as low as 7.6 × 10-7 is obtained. In comparison with a commercially available LiNbO3 modulator, the penalty is only 2 dB at the KP4 FEC threshold of 2.2 × 10-4.

Thermally stable hybrid cavity laser based on silicon nitride gratings.

In this paper, we show the experimental results of a thermally stable Si3N4 external cavity (SiN EC) laser with high power output and the lowest SiN EC laser threshold to our knowledge. The device consists of a 250 µm sized reflective semiconductor optical amplifier butt-coupled to a passive chip based on a series of Si3N4 Bragg gratings acting as narrow reflectors. A threshold of 12 mA has been achieved, with a typical side-mode suppression ratio of 45 dB and measured power output higher than 3 mW. Furthermore, we achieved a mode-hop free-lasing regime in the range of 15-62 mA and wavelength thermal stability up to 80°C. This solves the challenges related to cavity resonances' thermal shift and shows the possibility for this device to be integrated in dense wavelength-division multiplexing (WDM) and heat-intensive optical interconnects technologies.

Simplified modeling and optimization of silicon modulators based on free-carrier plasma dispersion effect.

In this paper, a simplified model of silicon phase modulators is presented that enables favorable accuracy together with a substantial reduction in computational effort and without the requirement of semiconductor TCAD device simulation software. This permits fast optimization of the different parameters of a modulator. The model was successfully implemented in Phoenix Optodesigner optical software allowing the optimization of silicon phase shifters for different applications. Moreover, this model presents a great potential for the simulation of modulators based on PN interdigitated junctions, which normally require complex and time consuming 3D simulations. Simulation time was reduced by a factor of 6 for the lateral PN junction based modulator, and two orders of magnitude reduction was obtained for interdigitated PN junctions based modulators.

A 40 Gbit/s optical link on a 300-mm silicon platform.

We demonstrated 40 Gbit/s optical link by coupling a silicon (Si) optical modulator to a germanium (Ge) photo-detector from two separate photonic chips. The optical modulator was based on carrier depletion in a pn diode integrated in a 950-µm long Mach-Zehnder interferometer. The Ge photo-detector was a lateral pin diode butt coupled to a silicon waveguide. The overall loss, which is mainly due to coupling (3 grating couplers times ~4 dB) was estimated to be lower than 18 dB. That also included modulator loss (4.9-dB) and propagation loss (<1 dB/cm). Both optoelectronic devices have been fabricated on a 300-mm CMOS platform to address high volume production markets.

Low loss 40 Gbit/s silicon modulator based on interleaved junctions and fabricated on 300 mm SOI wafers.

We demonstrate high-speed silicon modulators based on carrier depletion in interleaved pn junctions fabricated on 300 mm-SOI wafers using CMOS foundry facilities. 950 µm-long Mach Zehnder (MZ) and ring resonator (RR) modulator with a 100 µm radius, were designed, fabricated and characterized. 40 Gbit/s data transmission has been demonstrated for both devices. The MZ modulator exhibited a high extinction ratio of 7.9 dB with only 4 dB on-chip losses at the operating point.

[Survey of cardiovascular risk assessment and the behaviour of a sporting population]. / Enquête sur les comportements et l'évaluation du risque cardiovasculaire dans une population de sportifs.

In order to better understand the risk factors and behaviour of a general sports population, a questionnaire was handed to 603 consecutive sportsmen of various disciplines during a specific sports medicine consultation and a half-marathon. Among the discovered risk factors, smoking was the most common (19.3% for the entire study population), predominantly in the youngest group (26%). A resting ECG had been performed very frequently within the previous year in those over 40 years (86.5%), but less often in the younger sportsmen (44.8%). An exercise test had also very often been performed in those aged over 40 years (69.2 vs 10.6%). Behaviour associated with cardiovascular risk was common. Undertaking physical activity while febrile (58%) and smoking just before or after exertion (13.1%) were widespread behaviours. This population appeared casual in its approach to possibly suspicious cardiac symptoms of exercise, particularly the females and paradoxically the subjects doing the most sport. Lastly, only a minority of sportsmen knew the telephone number for the emergency medical service (45%) or claimed to be competent at first aid (32%). This survey underlines a practice relatively in accordance with the recommendations for detecting cardiovascular pathology, but shows a failure of preventive education.