Synthesis and Characterization of Cu2ZnSnS4 Thin Films Obtained by Combined Magnetron Sputtering and Pulsed Laser Deposition.

Cu2ZnSnS4 (CZTS) is a complex quaternary material, and obtaining a single-phase CZTS with no secondary phases is known to be challenging and dependent on the production technique. This work involves the synthesis and characterization of CZTS absorber layers for solar cells. Thin films were deposited on Si and glass substrates by a combined magnetron sputtering (MS) and pulsed laser deposition (PLD) hybrid system, followed by annealing without and with sulfur powder at 500 °C under argon (Ar) flow. Three different Cu2S, SnS2, and ZnS targets were used each time, employing a different target for PLD and the two others for MS. The effect of the different target arrangements and the role of annealing and/or sulfurization treatment were investigated. The characterization of the absorber films was performed by grazing incidence X-ray diffraction (GIXRD), X-ray reflectometry (XRR), Raman spectroscopy, scanning electron microscopy, and regular transmission spectroscopy. The film with ZnS deposited by PLD and SnS2 and Cu2S by MS was found to be the best for obtaining a single CZTS phase, with uniform surface morphology, a nearly stoichiometric composition, and an optimal band gap of 1.40 eV. These results show that a new method that combines the advantages of both MS and PLD techniques was successfully used to obtain single-phase Cu2ZnSnS4 films for solar cell applications.

Influence of Deposition Method on the Structural and Optical Properties of Ge2Sb2Te5.

Ge2Sb2Te5 (GST-225) is a chalcogenide material with applications in nonvolatile memories. However, chalcogenide material properties are dependent on the deposition technique. GST-225 thin films were prepared using three deposition methods: magnetron sputtering (MS), pulsed laser deposition (PLD) and a deposition technique that combines MS and PLD, namely MSPLD. In the MSPLD technique, the same bulk target is used for sputtering but also for PLD at the same time. The structural and optical properties of the as-deposited and annealed thin films were characterized by Rutherford backscattering spectrometry, X-ray reflectometry, X-ray diffraction, Raman spectroscopy and spectroscopic ellipsometry. MS has the advantage of easily leading to fully amorphous films and to a single crystalline phase after annealing. MS also produces the highest optical contrast between the as-deposited and annealed films. PLD leads to the best stoichiometric transfer, whereas the annealed MSPLD films have the highest mass density. All the as-deposited films obtained with the three methods have a similar optical bandgap of approximately 0.7 eV, which decreases after annealing, mostly in the case of the MS sample. This study reveals that the properties of GST-225 are significantly influenced by the deposition technique, and the proper method should be selected when targeting a specific application. In particular, for electrical and optical phase change memories, MS is the best suited deposition method.

Secondary Crystalline Phases Influence on Optical Properties in Off-Stoichiometric Cu2S-ZnS-SnS2 Thin Films.

Cu2ZnSnS4 (CZTS) is an economically and environmentally friendly alternative to other toxic and expensive materials used for photovoltaics, however, the variation in the composition during synthesis is often followed by the occurrence of the secondary binary and ternary crystalline phases. These phases produce changes in the optical absorption edge important in cell efficiency. We explore here the secondary phases that emerge in a combinatorial Cu2S-ZnS-SnS2 thin films library. Thin films with a composition gradient were prepared by simultaneous magnetron sputtering from three binary chalcogenide targets (Cu2S, SnS2 and ZnS). Then, the samples were crystallized by sulfurization annealing at 450 °C under argon flow. Their composition was measured by energy dispersive X-ray spectroscopy (EDX), whereas the structural and optical properties were investigated by grazing incidence X-ray diffraction (GIXRD), Raman spectroscopy and optical transmission measurements. As already known, we found that annealing in a sulfur environment is beneficial, increasing the crystallinity of the samples. Raman spectroscopy revealed the presence of CZTS in all the samples from the library. Secondary crystalline phases such as SnS2, ZnS and Cu-S are also formed in the samples depending on their proximity to the binary chalcogenide targets. The formation of ZnS or Cu-S strongly correlates with the Zn/Sn and Cu/Zn ratio of the total sample composition. The presence of these phases produces a variation in the bandgap between 1.41 eV and 1.68 eV. This study reveals that as we go further away from CZTS in the composition space, in the quasi-ternary Cu2S-ZnS-SnS2 diagram, secondary crystalline phases arise and increase in number, whereas the bandgap takes values outside the optimum range for photovoltaic applications.

Real-time analysis of arc-induced Long Period Gratings under gamma irradiation.

In this paper, we present a comparative experimental and theoretical study on gamma radiation sensitivity of Long Period Gratings (LPGs), fabricated by electric arc discharge technique, as monitored in three single mode optical fibers supplied by different manufacturers. A real-time measurement of LPGs' wavelength shift was performed until a total dose of 35 kGy was reached, with average dose rate of 0.18 kGy/h, the irradiation being done at room temperature. In one case, a maximum radiation sensitivity of 1.34 nm/kGy was recorded for doses up to 0.5 kGy. Moreover, by combining experimental results with numerical simulations, it was found that changes occurred in the core refractive index of the irradiated optical fibers up to 2.5 ∙ 10-5. The increase of the core thermo-optic coefficient up to 1.5 ∙ 10-8/°C was observed as well.

An electron beam profile instrument based on FBGs.

Along with the dose rate and the total irradiation dose measurements, the knowledge of the beam localization and the beam profile/energy distribution in the beam are parameters of interest for charged particle accelerator installations when they are used in scientific investigations, industrial applications or medical treatments. The transverse profile of the beam, its position, its centroid location, and its focus or flatness depend on the instrument operating conditions or on the beam exit setup. Proof-of-concept of a new type of charged particle beam diagnostics based on fiber Bragg gratings (FBGs) was demonstrated. Its operating principle relies on the measurement of the peak wavelength changes for an array of FBG sensors as function of the temperature following the exposure to an electron beam. Periodically, the sensor irradiation is stopped and the FBG are force cooled to a reference temperature with which the temperature influencing each sensor during beam exposure is compared. Commercially available FBGs, and FBGs written in radiation resistant optical fibers, were tested under electron beam irradiation in order to study their possible use in this application.