Structural, magnetic and electrical properties of SrRuO3 films and SrRuO3/SrTiO3 superlattices.

SrRuO3 films and SrRuO3/SrTiO3 superlattices grown on SrTiO3(001) were studied by structural, magnetic, magnetoresistance and Hall effect measurements. The superlattices showed heteroepitaxial growth with coherent interfaces and a Ru/Ti diffusion region of 1-1.5 unit cells. The resistivity had metallic character above a critical thickness of 3-4 unit cells, becoming insulating below. There was no hint of conduction processes along the interfaces. Both magnetization and magnetoresistance measurements showed an increase of the magnetic anisotropy, consistent with magnetostriction effects. The magnetostriction coefficient was estimated as λ100 âˆ¼ 1.4 × 10(-4). Three unit cell thick SrRuO3 layers in SrRuO3/SrTiO3 superlattices were found to have tetragonal crystal symmetry, as deduced from the sign change of the anomalous Hall constant.

Large local Hall effect in pin-hole dominated multigraphene spin-valves.

We report local and non-local measurements in pin-hole dominated mesoscopic multigraphene spin-valves. Local spin-valve measurements show spurious switching behavior in resistance during magnetic field sweeping similar to the signal observed due to spin injection into multigraphene. The switching behavior has been explained in terms of a local Hall effect due to a thickness irregularity of the tunnel barrier. The local Hall effect appears due to a large local magnetostatic field produced near the roughness in the AlO(x) tunnel barrier. In our samples the resistance change due to the local Hall effect remains negligibly small above 75 K. A strong local Hall effect might hinder spin injection into multigraphene, resulting in no spin signal in non-local measurements.

Revealing the origin of the vertical hysteresis loop shifts in an exchange biased Co/YMnO3 bilayer.

We have investigated exchange bias effects in bilayers composed of the antiferromagnetic o-YMnO(3) and ferromagnetic Co thin film by means of SQUID magnetometry, magnetoresistance, anisotropic magnetoresistance and the planar Hall effect. The magnetization and magneto-transport properties show pronounced asymmetries in the field and magnetization axes of the field hysteresis loops. Both exchange bias parameters, the exchange bias field H(E)(T) as well as the magnetization shift M(E)(T), vanish around the Néel temperature T(N) =/~ 45 K. We show that the magnetization shift M(E)(T) is also measured by a shift in the anisotropic magnetoresistance and planar Hall resistance having a similar temperature dependence as the one obtained from magnetization measurements. Because the o-YMnO(3) film is highly insulating, our results demonstrate that the M(E)(T) shift originates at the interface within the ferromagnetic Co layer. To show that the main results obtained are general and not because of some special characteristics of the o-YMO(3) layer, similar measurements were done in Co/CoO micro-wires. The transport and magnetization characterization of the micro-wires supports the main conclusion that these effects are related to the response of the ferromagnetic Co layer at the interface.

Stabilization of ferromagnetic order in La(0.7)Sr(0.3)MnO3-SrRuO3 Superlattices.

The study of spatially confined complex oxides is of wide interest, since correlated electrons at interfaces might form exotic phases. Here La(0.7)Sr(0.3)MnO(3)/SrRuO(3) superlattices with coherently grown interfaces were studied by structural techniques, magnetization, and magnetotransport measurements. Magnetization measurements showed that ferromagnetic order in ultrathin La(0.7)Sr(0.3)MnO(3) layers is stabilized in the superlattices down to layer thicknesses of at least two unit cells. This stabilization is destroyed, if the ferromagnetic layers are separated by two unit cell thick SrTiO(3) layers. The resistivity of the superlattices showed metallic behavior and was dominated by the conducting SrRuO(3) layers, the off-diagonal resistivity showed an anomalous Hall effect from both SrRuO(3) and La(0.7)Sr(0.3)MnO(3) layers. This shows that the La(0.7)Sr(0.3)MnO(3) layers are not only ferromagnetic but also highly conducting; probably a conducting hole gas is induced at the interfaces that stabilizes the ferromagnetic order. This result opens up an alternative route for the fabrication of two-dimensional systems with long-range ferromagnetic order.

An alternative route towards micro- and nano-patterning of oxide films.

This paper presents a method to obtain submicron- and nanometer structures of different oxide films and heterostructures combining e-beam lithography and chemical etching. The most relevant advantage of this method is that structures of tens of microns in length and below ∼100 nm width can be produced, keeping the intrinsic bulk film properties, as proven by electrical transport measurements. In this way our method provides a bridge that connects the attractive properties of oxide films and the nanoworld.

The influence of Ga(+) irradiation on the transport properties of mesoscopic conducting thin films.

We studied the influence of 30 keV Ga(+)-ions-commonly used in focused-ion-beam (FIB) devices-on the transport properties of thin crystalline graphite flakes, and La(0.7)Ca(0.3)MnO(3) and Co thin films. The changes in electrical resistance were measured in situ during irradiation and also the temperature and magnetic field dependence before and after irradiation. Our results show that the transport properties of these materials strongly change at Ga(+) fluences much below those used for patterning and ion-beam-induced deposition (IBID), seriously limiting the use of FIB when the intrinsic properties of the materials of interest are of importance. We present a method that can be used to protect the sample as well as to produce selectively irradiation-induced changes.

Disordered electrical potential observed on the surface of SiO2 by electric field microscopy.

The electrical potential on the surface of ∼300 nm thick SiO(2) grown on single-crystalline Si substrates has been characterized at ambient conditions using electric field microscopy. Our results show an inhomogeneous potential distribution with fluctuations up to ∼0.4 V within regions of 1 µm. The potential fluctuations observed at the surface of these usual dielectric holders of graphene sheets should induce strong variations in the graphene charge densities and provide a simple explanation for some of the anomalous behaviors of the transport properties of graphene.