RESUMO
Plasmonic organic hybrid electro/optic modulators are among the most innovative light modulators fully compatible with the silicon photonics platform. In this context, modeling is instrumental to both computer-aided optimization and interpretation of experimental data. Due to the large computational resources required, modeling is usually limited to waveguide simulations. The first aim of this work to investigate an improved, physics-based description of the voltage-dependent electro/optic effect, leading to a multiphysics-augmented model of the modulator cross-section. Targeting the accuracy of full-wave, 3D modeling with moderate computational resources, the paper presents a novel mixed modal-FDTD simulation strategy that allows us to drastically reduce the number and complexity of 3D-FDTD simulations needed to accurately evaluate the modulator response. This framework is demonstrated on a device inspired by the literature.
RESUMO
We present three-dimensional simulations of HgCdTe-based focal plane arrays (FPAs) with two-color and dual-band sequential infrared pixels having realistic truncated-pyramid shape, taking into account also the presence of compositionally graded transition layers. After a validation against the spectral responsivity of two-color, mid-wavelength infrared detectors from the literature, the method is employed for a simulation campaign on dual-band, mid-, and long-wavelength infrared FPAs illuminated by a Gaussian beam. Simulation results underscore the importance of a full-wave approach to the electromagnetic problem, since multiple internal reflections due to metallizations and slanted sidewalls produce non-negligible features in the quantum efficiency spectra, especially in the long-wavelength band. Evaluations of the optical and diffusive contribution to inter-pixel crosstalk indicate the effectiveness of deep trenches to prevent diffusive crosstalk in both wavebands. In its present form, the detector seems to be subject to significant optical crosstalk in the long-wavelength infrared band, which could be addressed through pixel shape optimization.
RESUMO
Majority carrier depletion has been proposed as a method to suppress the dark current originating from quasi-neutral regions in HgCdTe infrared focal plane array detectors. However, a very low doping level is usually required for the absorber layer, a task quite difficult to achieve in realizations. In order to address this point, we performed combined electromagnetic and electric simulations of a planar $ 5 \times 5 $5×5 pixel miniarray with 5 µm wide square pixels, assessing the effect of the absorber thickness, its doping level in the interval $ {N_D}{ = [10^{14}}{,10^{15}}] \;{{\rm cm}^{ - 3}} $ND=[1014,1015]cm-3, and temperature in the interval 140 K-230 K, both in the dark and under illumination. Looking for a trade-off, we found that the path towards high-temperature operation has quite stringent requirements on the residual doping, whereas a reduction of the absorber thickness helps only moderately to reduce the dark current. Under illumination, interpixel cross talk is only slightly cut down by a decrease of temperature or absorber doping in the considered intervals, whereas it gets more effectively reduced by thinning the absorber.
RESUMO
The Ge1-xSnx alloy is a promising material for optoelectronic applications. It offers a tunable wavelength in the infrared (IR) spectrum and high compatibility with complementary metal-oxide-semiconductor (CMOS) technology. However, difficulties in growing device quality Ge1-xSnx films has left the potentiality of this material unexplored. Recent advances in technological processes have renewed the interest toward this material paving the way to potential applications. In this work, we perform a numerical investigation on absorption coefficient, radiative recombination rate, and Auger recombination properties of intrinsic and doped Ge1-xSnx for application in the extended-short wavelength infrared and medium wavelength infrared spectrum ranges. We apply a Green's function based model to the Ge1-xSnx full electronic band structure determined through an empirical pseudopotential method and determine the dominant recombination mechanism between radiative and Auger processes over a wide range of injection levels.
