Spin-Resolved Magneto-Tunneling and Giant Anisotropic g-Factor in Broken Gap InAs-GaSb Core-Shell Nanowires.

We experimentally and computationally investigate the magneto-conductance across the radial heterojunction of InAs-GaSb core-shell nanowires under a magnetic field, B, up to 30 T and at temperatures in the range 4.2-200 K. The observed double-peak negative differential conductance markedly blue-shifts with increasing B. The doublet accounts for spin-polarized currents through the Zeeman split channels of the InAs (GaSb) conduction (valence) band and exhibits strong anisotropy with respect to B orientation and marked temperature dependence. Envelope function approximation and a semiclassical (WKB) approach allow to compute the magnetic quantum states of InAs and GaSb sections of the nanowire and to estimate the B-dependent tunneling current across the broken-gap interface. Disentangling different magneto-transport channels and a thermally activated valence-to-valence band transport current, we extract the g-factor from the spin-up and spin-down dI/dV branch dispersion, revealing a giant, strongly anisotropic g-factor in excess of 60 (100) for the radial (tilted) field configurations.

Dielectric Engineering Boosts the Efficiency of Carbon Nanotube Photodiodes.

Carbon nanotube (CNT) photodiodes are a promising system for high-efficiency photocurrent generation due to the strong Coulomb interactions that can drive carrier multiplication. If the Coulomb interactions are too strong, however, exciton formation can hamper photocurrent generation. Here, we explore, experimentally and theoretically, the effect of the environmental dielectric constant (εenv) on the photocurrent generation process in CNTs. We study individual ultraclean CNTs of known chiral index in a vacuum or dry nitrogen gas (εenv = 1) and oil (εenv = 2.15). The efficiency of photocurrent generation improves by more than an order of magnitude in oil. Two mechanisms explain this improvement. First, the refractive index of the environment optimizes the interference between incident and reflected light. Second, exciton binding energies are reduced in oil, changing the relaxation pathways of photoexcited carriers. We varied the axial electric field in the pn junction from 4 to 14 V/µm. Our measurements at high field indicate that autoionization of second-subband excitons can coexist with carrier multiplication. Dielectric screening makes this coexistence regime more accessible and allows us to reach photocurrent quantum yields greater than 100%.

Extremely Efficient Photocurrent Generation in Carbon Nanotube Photodiodes Enabled by a Strong Axial Electric Field.

Carbon nanotube (CNT) photodiodes have the potential to convert light into electrical current with high efficiency. However, previous experiments have revealed the photocurrent quantum yield (PCQY) to be well below 100%. In this work, we show that the axial electric field increases the PCQY of CNT photodiodes. Under optimal conditions, our data suggest PCQY > 100%. We studied, both experimentally and theoretically, CNT photodiodes at room temperature using optical excitation corresponding to the S22, S33, and S44 exciton resonances. The axial electric field inside the pn junction was controlled using split gates that are capacitively coupled to the suspended CNT. Our results give new insight into the photocurrent generation pathways in CNTs and the field dependence and diameter dependence of PCQY.

Excitons in Core-Shell Nanowires with Polygonal Cross Sections.

The distinctive prismatic geometry of semiconductor core-shell nanowires leads to complex localization patterns of carriers. Here, we describe the formation of optically active in-gap excitonic states induced by the interplay between localization of carriers in the corners and their mutual Coulomb interaction. To compute the energy spectra and configurations of excitons created in the conductive shell, we use a multielectron numerical approach based on the exact solution of the multiparticle Hamiltonian for electrons in the valence and conduction bands, which includes the Coulomb interaction in a nonperturbative manner. We expose the formation of well-separated quasidegenerate levels, and focus on the implications of the electron localization in the corners or on the sides of triangular, square, and hexagonal cross sections. We obtain excitonic in-gap states associated with symmetrically distributed electrons in the spin singlet configuration. They acquire large contributions due to Coulomb interaction, and thus are shifted to much higher energies than other states corresponding to the conduction electron and the vacancy localized in the same corner. We compare the results of the multielectron method with those of an electron-hole model, and we show that the latter does not reproduce the singlet excitonic states. We also obtain the exciton lifetime and explain selection rules which govern the recombination process.

Giant modulation of the electronic band gap of carbon nanotubes by dielectric screening.

Carbon nanotubes (CNTs) are a promising material for high-performance electronics beyond silicon. But unlike silicon, the nature of the transport band gap in CNTs is not fully understood. The transport gap in CNTs is predicted to be strongly driven by electron-electron (e-e) interactions and correlations, even at room temperature. Here, we use dielectric liquids to screen e-e interactions in individual suspended ultra-clean CNTs. Using multiple techniques, the transport gap is measured as dielectric screening is increased. Changing the dielectric environment from air to isopropanol, we observe a 25% reduction in the transport gap of semiconducting CNTs, and a 32% reduction in the band gap of narrow-gap CNTs. Additional measurements are reported in dielectric oils. Our results elucidate the nature of the transport gap in CNTs, and show that dielectric environment offers a mechanism for significant control over the transport band gap.

Tailoring the core electron density in modulation-doped core-multi-shell nanowires.

We show how a proper radial modulation of the composition of core-multi-shell nanowires (NWs) critically enhances the control of the free-carrier density in the high-mobility core with respect to core-single-shell structures, thus overcoming the technological difficulty of fine tuning the remote doping density. We calculate the electron population of the different NW layers as a function of the doping density and of several geometrical parameters by means of a self-consistent Schrödinger-Poisson approach: free carriers tend to localize in the outer shell and screen the core from the electric field of the dopants.

Predicting signatures of anisotropic resonance energy transfer in dye-functionalized nanoparticles.

Resonance energy transfer (RET) is an inherently anisotropic process. Even the simplest, well-known Förster theory, based on the transition dipole-dipole coupling, implicitly incorporates the anisotropic character of RET. In this theoretical work, we study possible signatures of the fundamental anisotropic character of RET in hybrid nanomaterials composed of a semiconductor nanoparticle (NP) decorated with molecular dyes. In particular, by means of a realistic kinetic model, we show that the analysis of the dye photoluminescence difference for orthogonal input polarizations reveals the anisotropic character of the dye-NP RET which arises from the intrinsic anisotropy of the NP lattice. In a prototypical core/shell wurtzite CdSe/ZnS NP functionalized with cyanine dyes (Cy3B), this difference is predicted to be as large as 75% and it is strongly dependent in amplitude and sign on the dye-NP distance. We account for all the possible RET processes within the system, together with competing decay pathways in the separate segments. In addition, we show that the anisotropic signature of RET is persistent up to a large number of dyes per NP.

Time-dependent simulation and analytical modelling of electronic Mach-Zehnder interferometry with edge-states wave packets.

We compute the exact single-particle time-resolved dynamics of electronic Mach-Zehnder interferometers based on Landau edge-states transport, and assess the effect of the spatial localization of carriers on the interference pattern. The exact carrier dynamics is obtained by solving numerically the time-dependent Schrödinger equation with a suitable 2D potential profile reproducing the interferometer design. An external magnetic field, driving the system to the quantum Hall regime with filling factor one, is included. The injected carriers are represented by a superposition of edge states, and their interference pattern-controlled via magnetic field and/or area variation-reproduces the one of (Ji et al 2003 Nature 422 415). By tuning the system towards different regimes, we find two additional features in the transmission spectra, both related to carrier localization, namely a damping of the Aharonov-Bohm oscillations with increasing difference in the arms length, and an increased mean transmission that we trace to the energy-dependent transmittance of quantum point contacts. Finally, we present an analytical model, also accounting for the finite spatial dispersion of the carriers, able to reproduce the above effects.

Space- and time-dependent quantum dynamics of spatially indirect excitons in semiconductor heterostructures.

We study the unitary propagation of a two-particle one-dimensional Schrödinger equation by means of the Split-Step Fourier method, to study the coherent evolution of a spatially indirect exciton (IX) in semiconductor heterostructures. The mutual Coulomb interaction of the electron-hole pair and the electrostatic potentials generated by external gates and acting on the two particles separately are taken into account exactly in the two-particle dynamics. As relevant examples, step/downhill and barrier/well potential profiles are considered. The space- and time-dependent evolutions during the scattering event as well as the asymptotic time behavior are analyzed. For typical parameters of GaAs-based devices, the transmission or reflection of the pair turns out to be a complex two-particle process, due to comparable and competing Coulomb, electrostatic, and kinetic energy scales. Depending on the intensity and anisotropy of the scattering potentials, the quantum evolution may result in excitation of the IX internal degrees of freedom, dissociation of the pair, or transmission in small periodic IX wavepackets due to dwelling of one particle in the barrier region. We discuss the occurrence of each process in the full parameter space of the scattering potentials and the relevance of our results for current excitronic technologies.

Nanoscale spin rectifiers controlled by the Stark effect.

The control of orbitals and spin states of single electrons is a key ingredient for quantum information processing and novel detection schemes and is, more generally, of great relevance for spintronics. Coulomb and spin blockade in double quantum dots enable advanced single-spin operations that would be available even for room-temperature applications with sufficiently small devices. To date, however, spin operations in double quantum dots have typically been observed at sub-kelvin temperatures, a key reason being that it is very challenging to scale a double quantum dot system while retaining independent field-effect control of individual dots. Here, we show that the quantum-confined Stark effect allows two dots only 5 nm apart to be independently addressed without the requirement for aligned nanometre-sized local gating. We thus demonstrate a scalable method to fully control a double quantum dot device, regardless of its physical size. In the present implementation we present InAs/InP nanowire double quantum dots that display an experimentally detectable spin blockade up to 10 K. We also report and discuss an unexpected re-entrant spin blockade lifting as a function of the magnetic field intensity.

High mobility one- and two-dimensional electron systems in nanowire-based quantum heterostructures.

Free-standing semiconductor nanowires in combination with advanced gate-architectures hold an exceptional promise as miniaturized building blocks in future integrated circuits. However, semiconductor nanowires are often corrupted by an increased number of close-by surface states, which are detrimental with respect to their optical and electronic properties. This conceptual challenge hampers their potentials in high-speed electronics and therefore new concepts are needed in order to enhance carrier mobilities. We have introduced a novel type of core-shell nanowire heterostructures that incorporate modulation or remote doping and hence may lead to high-mobility electrons. We demonstrate the validity of such concepts using inelastic light scattering to study single modulation-doped GaAs/Al0.16Ga0.84As core-multishell nanowires grown on silicon. We conclude from a detailed experimental study and theoretical analysis of the observed spin and charge density fluctuations that one- and two-dimensional electron channels are formed in a GaAs coaxial quantum well spatially separated from the donor ions. A total carrier density of about 3 × 10(7) cm(-1) and an electron mobility in the order of 50,000 cm(2)/(V s) are estimated. Spatial mappings of individual GaAs/Al0.16Ga0.84As core-multishell nanowires show inhomogeneous properties along the wires probably related to structural defects. The first demonstration of such unambiguous 1D- and 2D-electron channels and the respective charge carrier properties in these advanced nanowire-based quantum heterostructures is the basis for various novel nanoelectronic and photonic devices.

Magnetic states in prismatic core multishell nanowires.

We study the electronic states of core multishell semiconductor nanowires, including the effect of strong magnetic fields. We show that the multishell overgrowth of a free-standing nanowire, together with the prismatic symmetry of the substrate, may induce quantum confinement of carriers in a set of quasi-1D quantum channels corresponding to the nanowire edges. Localization and interchannel tunnel coupling are controlled by the curvature at the edges and the diameter of the underlying nanowire. We also show that a magnetic field may induce either Aharonov-Bohm oscillations of the energy levels in the axial configuration, or a dimensional transition of the quantum states from quasi-1D to Landau levels for fields normal to the axis. Explicit predictions are given for nanostructures based on GaAs, InAs, and InGaN with different symmetries.

Reduced electron relaxation rate in multielectron quantum dots.

We use a configuration-interaction approach and the Fermi golden rule to investigate electron-phonon interaction in multielectron quantum dots. Lifetimes are computed in the low-density, highly correlated regime. We report numerical evidence that electron-electron interaction generally leads to reduced decay rates of excited electronic states in weakly confined quantum dots, where carrier relaxation is dominated by the interaction with longitudinal acoustic phonons.