RESUMO
We present a study on amorphous SiO/SiO2 superlattice formation on Si substrate held at room temperature and annealed in the temperature range 600-1100 degrees C. Grazing-incidence small-angle X-ray scattering (GISAXS) and X-ray reflectivity were used to study such samples. Amorphous SiO/SiO2 superlattices were prepared by high vacuum physical vapor deposition of 4 nm thin films of SiO and SiO2 (10 layers each) from corresponding targets on silicon substrate. Rotation of the Si substrate during evaporation ensured homogeneity of the films over the whole substrate. We observed that the inhomogeneities introduced into the SiO and SiO2 layers during the deposition (evaporation) give rise to small angle scattering at lower annealing temperatures. After an initial SiO layer thickness reduction for 600 degrees C annealing, these thicknesses remain virtually unchanged up to 1000 degrees C, where they start to decrease again which leads to particle formation. Nevertheless, this compacting at low temperatures may lead to the seed formation in SiO layers that will facilitate later Si nanoparticles growth.
