Surface structure silicon based impact-ionization multiplier for optical detection.

This paper presents an innovative solid-state current amplifier based on impact ionization. The operation principle, fabrication, and test results for this device are reported. This amplifier was built on a silicon surface using standard microelectronics processes including ion implantation. Testing was performed by connecting the device to both silicon and indium-gallium-arsenide photodiodes to demonstrate its compatibility with arbitrary current sources. Current gains above 100 along with pre-amplified leakage currents of less than 10 nA were measured.