Enhanced thermoelectric properties in Sb/Ge core/shell nanowires through vacancy modulation.

In the present work, we have modified the physical and electronic structure of Sb/Ge core/shell nanowires via vacancy creation and doping with foreign atoms with the aim to improve their thermoelectric energy conversion efficiency. Sb/Ge-NWs having a diameter of 1.5 Å show metallicity with 2Go quantum conductance. The stability of the nanowires is assessed through the calculation of their formation energy. The formation of one vacancy at either the Sb- and Ge-site modifies substantially the electronic properties. From the comparison of the thermoelectric properties of the nanowires with and without the vacancy, we have found that the figure of merit for the Sb/Ge NW with one Sb vacancy increases of 0.18 compared to the pristine NW. The NW doping with different transition metals: Fe, Co, Ni and Cu have been found to also enhance the conversion efficiency. Thus, our calculations show that the thermoelectric performance of metal-semiconductor core-shell NWs can be in principle improved as much as 80% by vacancy formation and doping.

Metallic one-dimensional heterostructure for gas molecule sensing.

We have investigated a new metallic core-shell nanowire (NW) geometry of that could be obtained experimentally, that is silicon (Si) and germanium (Ge) NWs with cores constituted by group-10 elements palladium (Pd) and platinum (Pt). These NWs are optimized with two different diameters of 1.5 Å and 2.5 Å. The nanowires having diameter of 1.5 Å show semi-metallic nature with GGA-PBE calculation and metallic nature while spin orbit interaction (SOC) is included. The quantum conductance of the NWs increases with the diameter of the nanowire. We have investigated current-voltage (IV) characteristics for the considered NWs. It has been found that current values in accordance with applied voltage show strong dependence on the diameter of the NWs. The optical study of the NWs shows that absorption co-efficient peak moves to lower energies; due to quantum confinement effect. Furthermore, we have extensively studied optical response of Pd and Pt based core-shell NWs in O2 and CO2 environment. Our study on Si and Ge based metallic core/shell NW show a comprehensive picture as possible electron connector in future nano-electronic devices as well as nano gas detector for detecting O2 gas.

Si and Ge based metallic core/shell nanowires for nano-electronic device applications.

One dimensional heterostructure nanowires (NWs) have attracted a large attention due to the possibility of easily tuning their energy gap, a useful property for application to next generation electronic devices. In this work, we propose new core/shell NW systems where Ge and Si shells are built around very thin As and Sb cores. The modification in the electronic properties arises due to the induced compressive strain experienced by the metal core region which is attributed to the lattice-mismatch with the shell region. As/Ge and As/Si nanowires undergo a semiconducting-to-metal transition on increasing the diameter of the shell. The current-voltage (I-V) characteristics of the nanowires show a negative differential conductance (NDC) effect for small diameters that could lead to their application in atomic scale device(s) for fast switching. In addition, an ohmic behavior and upto 300% increment of the current value is achieved on just doubling the shell region. The resistivity of nanowires decreases with the increase in diameter. These characteristics make these NWs suitable candidates for application as electron connectors in nanoelectronic devices.

Highly infrared sensitive VO2 nanowires for a nano-optical device.

Recent studies on the electronic, magnetic and optical properties of VO2 (vanadium dioxide) materials have motivated the exploration of one dimensional VO2 nanowires. First principles calculations were performed to investigate the structural, electronic, magnetic and optical properties of the monoclinic (M) and rutile (R) phases of VO2 nanowires. The monoclinic phase shows semiconducting behaviour with a band gap of 1.17 eV, whereas the rutile phase of VO2 nanowires behaves as a spin gapless semiconducting material, as band lines cross the Fermi level due only to up spin contribution. The monoclinic structure of VO2 nanowires is found to be paramagnetic and the rutile structure shows ferromagnetic half metal behavior. The conductivity calculation for VO2 nanowires shows the metal-insulator transition (MIT) temperature to be 250 K. The possible mechanism of VO2 nanowires to be used as smart windows has been discussed, as the nanowires are highly sensitive in the infrared (IR) region. Interestingly, at low temperature, the VO2 monoclinic structure allows infrared light to be transmitted, while VO2 with the rutile phase blocks light in the IR region. Furthermore, we adsorbed CO2, N2 and SO2 gas molecules on 1D VO2 monoclinic nanowire to investigate their interaction behaviour. It was observed that the absorption and transmission properties of VO2 dramatically change upon the adsorption of CO2 and SO2 gas molecules, which is likely to open up its application as an optical gas sensor.