Single photons on demand from novel site-controlled GaAsN/GaAsN:H quantum dots.

We demonstrate triggered single-photon emission from a novel system of site-controlled quantum dots (QDs), fabricated by exploiting the hydrogen-assisted, spatially selective passivation of N atoms in dilute nitride semiconductors. Evidence of this nonclassical behavior is provided by the observation of strong antibunching in the autocorrelation histogram of the QD exciton emission line. This class of site-controlled quantum emitters can be exploited for the fabrication of new hybrid QD-nanocavity systems of interest for future quantum technologies.