A Magnetic field sensor based on OLED / organic photodetector stack.

In this study an all-organic magnetic field sensor based on an organic light emitting diode (OLED) and organic photodetector (OPD) layer stack is presented. This sensor opens possibilities to create printable, flexible magnetic field sensors using commercially viable components, allowing magnetic field sensors to be simply integrated into existing OLED technology. The sensor function is driven by the large magneto-electroluminescence (MEL) of a thermally activated delayed fluorescence (TADF)-emitter based OLED, which in reference devices have shown an MEL of about 60% for magnetic fields on the order of 10 mT. Maximum sensitivity of about 0.15 nA/mT (150 µV/mT or 15 mV/kG with amplification) is achieved at a magnetic field of 3 mT to 4 mT. While the detectivity is limited to ~ 10-3 T·Hz-1/2, we show this can be improved upon on as the magnetic field detection sensitivity of OLEDs measured by an external Si-detector is about an order of magnitude higher. Sensitivity of 2 nA/mT and detectivities better than 10-5 T·Hz -1/2 are demonstrated, and the intrinsic detectivity limit is estimated to be on the order of 10-9 T·Hz -1/2.

Organic single crystals of charge-transfer complexes: model systems for the study of donor/acceptor interactions.

The charge-transfer (CT) state arising as a hybrid electronic state at the interface between charge donor and charge acceptor molecular units is important to a wide variety of physical processes in organic semiconductor devices. The exact nature of this state depends heavily on the nature and co-facial overlap between the donor and acceptor; however, altering this overlap is usually accompanied by extensive confounding variations in properties due to extrinsic factors, such as microstructure. As a consequence, establishing reliable relationships between donor/acceptor molecular structures, their molecular overlap, degree of charge transfer and physical properties, is challenging. Herein, we examine the electronic structure of a polymorphic system based on the donor dibenzotetrathiafulvalene (DBTTF) and the acceptor 7,7,8,8-tetracyanoquinodimethane (TCNQ) in the form of high-quality single crystals varying in the donor-acceptor overlap. Using angle-resolved photoemission spectroscopy, we resolve the highest occupied molecular orbital states of the CT crystals. Analysis based on field-effect transistors allows us to probe the sub-gap states impacting hole and electron transport. Our results expand the understanding on the impact of donor and acceptor interactions on electronic structure and charge transport.

The role of orientation in the MEL response of OLEDs.

Magneto electroluminescence (MEL) is emerging as a powerful tool to study spin dynamics in organic light emitting diodes (OLEDs). The shape of the MEL response is typically used to draw qualitative inference on the dominant process (singlet fission or triplet fusion) in the device. In this study, we develop a quantitative model for MEL and apply it to devices based on Rubrene, and three solution processable anthradithiophene emitters. The four emitters allow us to systematically vary the film structure between highly textured, poly-crystalline to amorphous. We find significant diversity in the MEL, with the textured films giving highly structured responses. We find that the additional structure does not coincide with energy anti-crossings, but intersections in the singlet character between adjacent states. In all cases the MEL can be adequately described by an extended Merrifield model. Via the inclusion of charge injection, we are able to draw additional information on underlying physics in OLED devices.

Higher order effects in organic LEDs with sub-bandgap turn-on.

Spin-dependent nonlinear processes in organic materials such as singlet-fission and triplet-triplet annihilation could increase the performance for photovoltaics, detectors, and light emitting diodes. Rubrene/C60 light emitting diodes exhibit a distinct low voltage (half-bandgap) threshold for emission. Two origins for the low voltage turn-on have been proposed: (i) Auger assisted energy up-conversion, and (ii) triplet-triplet annihilation. We test these proposals by systematically altering the rubrene/C60 interface kinetics by introducing thin interlayers. Quantitative analysis of the unmodified rubrene/C60 device suggests that higher order processes can be ruled out as the origin of the sub-bandgap turn-on. Rather, band-to-band recombination is the most likely radiative recombination process. However, insertion of a bathocuproine layer yields a 3-fold increase in luminance compared to the unmodified device. This indicates that suppression of parasitic interface processes by judicious modification of the interface allows a triplet-triplet annihilation channel to be observed.

Electrical Detection of Singlet Fission in Single Crystal Tetracene Transistors.

We present the electrical detection of singlet fission in tetracene by using a field-effect transistor (FET). Singlet fission is a photoinduced spin-dependent process, yielding two triplet excitons from the absorption of a single photon. In this study, we engineered a more deterministic platform composed of an organic single crystal FET rather than amorphous or polycrystalline FETs to elucidate spin-dependent processes under magnetic fields. Despite the unipolar operation and relatively high mobility of single crystal tetracene FETs, we were able to manipulate spin dependent processes to detect magnetoconductance (MC) at room temperature by illuminating the FETs and tuning the bias voltage to adjust majority charge carrier density and trap occupancy. In considering the crystalline direction and magnetic field interactions in tetracene, we show the MC response observed in tetracene FETs to be the result of the singlet fission process.

Quantum Hall device data monitoring following encapsulating polymer deposition.

The information provided in this data article will cover the growth parameters for monolayer, epitaxial graphene, as well as how to verify the layer homogeneity by confocal laser scanning and optical microscopy. The characterization of the subsequently fabricated quantum Hall device is shown for example cases during a series of environmental exposures. Quantum Hall data acquired from a CYTOP encapsulation is also provided. Data from Raman spectroscopy, atomic force microscopy, and other electrical property trends are shown. Lastly, quantum Hall effect data are presented from devices with deposited Parylene C films measuring 10.7 µm and 720 nm. All data are relevant for Rigosi et al. [1].

Examining epitaxial graphene surface conductivity and quantum Hall device stability with Parylene passivation.

Homogeneous, single-crystal, monolayer epitaxial graphene (EG) is the one of most promising candidates for the advancement of quantized Hall resistance (QHR) standards. A remaining challenge for the electrical characterization of EG-based quantum Hall devices as a useful tool for metrology is that they are electrically unstable when exposed to air due to the adsorption of and interaction with atmospheric molecular dopants. The resulting changes in the charge carrier density become apparent by variations in the surface conductivity, the charge carrier mobility, and may result in a transition from n-type to p-type conductivity. This work evaluates the use of Parylene C and Parylene N as passivation layers for EG. Electronic transport of EG quantum Hall devices and non-contact microwave perturbation measurements of millimeter-sized areas of EG are both performed on bare and Parylene coated samples to test the efficacy of the passivation layers. The reported results, showing a significant improvement in passivation due to Parylene deposition, suggest a method for the mass production of millimeter-scale graphene devices with stable electrical properties.

Mobility overestimation due to gated contacts in organic field-effect transistors.

Parameters used to describe the electrical properties of organic field-effect transistors, such as mobility and threshold voltage, are commonly extracted from measured current-voltage characteristics and interpreted by using the classical metal oxide-semiconductor field-effect transistor model. However, in recent reports of devices with ultra-high mobility (>40 cm(2) V(-1) s(-1)), the device characteristics deviate from this idealized model and show an abrupt turn-on in the drain current when measured as a function of gate voltage. In order to investigate this phenomenon, here we report on single crystal rubrene transistors intentionally fabricated to exhibit an abrupt turn-on. We disentangle the channel properties from the contact resistance by using impedance spectroscopy and show that the current in such devices is governed by a gate bias dependence of the contact resistance. As a result, extracted mobility values from d.c. current-voltage characterization are overestimated by one order of magnitude or more.