RESUMO
The implementation of polarization controlling components enables additional functionalities of short-wave infrared (SWIR) imagers. The high-performance and mass-producible polarization controller based on Si metasurface is in high demand for the next-generation SWIR imaging system. In this work, we report the first demonstration of all-Si metasurface based polarizing bandpass filters (PBFs) on 12-inch wafers. The PBF achieves a polarization extinction ratio of above 10 dB in power within the passbands. Using the complementary metal-oxide-semiconductor (CMOS) compatible 193nm ArF deep ultra-violet (DUV) immersion lithography and inductively coupled plasma (ICP) etch processing line, a device yield of 82% is achieved.
RESUMO
The demonstration of a color display metasurface on a 12-inch silicon wafer with critical dimension (CD) below 100 nm by complementary metal-oxide semiconductor (CMOS) compatible technology is reported for the first time. The 193 nm ArF deep UV immersion lithography is leveraged instead of electron beam lithography (EBL) to pattern the metasurface, which greatly improves the efficiency while keeping a high resolution. The demonstrated metasurface successfully generates the resonant modes and reflects the lights at resonance wavelengths, giving its display in red, green, and blue (RGB) colors. The wafer-level uniformities of CD and reflection characteristic of the metasurface are measured and analyzed. The experimental data show that they are well controlled in the fabrication process. The work provides a promising route towards mass production of dielectric metasurfaces.
