Magnetoresistance of magnetically doped ZnO films.

Magnetoresistance measurements have been made at 5 K on doped ZnO thin films grown by pulsed laser deposition. ZnCoO, ZnCoAlO and ZnMnAlO samples have been investigated and compared to similar films containing no transition metal dopants. It is found that the Co-doped samples with a high carrier concentration have a small negative magnetoresistance, irrespective of their magnetic moment. On decreasing the carrier concentration, a positive contribution to the magnetoresistance appears and a further negative contribution. This second, negative contribution, which occurs at very low carrier densities, correlates with the onset of ferromagnetism due to bound magnetic polarons suggesting that the negative magnetoresistance results from the destruction of polarons by a magnetic field. An investigation of the anisotropic magnetoresistance showed that the orientation of the applied magnetic field, relative to the sample, had a large effect. The results for the ZnMnAlO samples showed less consistent trends.

Two magnetic regimes in doped ZnO corresponding to a dilute magnetic semiconductor and a dilute magnetic insulator.

Films of ZnO doped with magnetic ions Mn and Co and, in some cases, with Al have been fabricated with a very wide range of carrier densities. Ferromagnetic behavior is observed in both insulating and metallic films, but not when the carrier density is intermediate. Insulating films exhibit variable range hopping at low temperatures and are ferromagnetic at room temperature due to the interaction of the localized spins with static localized states. The magnetism is quenched when carriers in the localized states become mobile. In the metallic (degenerate semiconductor) range, robust ferromagnetism reappears together with very strong magneto-optic signals and room temperature anomalous Hall data. This demonstrates the polarization of the conduction bands and indicates that, when ZnO is doped into the metallic regime, it behaves as a genuine magnetic semiconductor.

Room-temperature magneto-optics of ferromagnetic transition-metal-doped ZnO thin films.

Magneto-optic studies of ZnO doped with transition metals Co, Mn, V, and Ti indicate a significant magnetic circular dichroism (MCD) at the ZnO band edge at room temperature, together with an associated dispersive Faraday rotation. Similar spectra occur for each dopant, which implies that the ferromagnetism is an intrinsic property of the bulk ZnO lattice. At 10 K, additional paramagnetic contributions to the MCD are observed, but above about 150 K, the magnitude of the MCD signal is dominated by the ferromagnetism and is almost temperature independent. The MCD at the ZnO band edge shows room temperature hysteretic behavior.

A Review of the Magnetic Relaxation and Its Application to the Study of Atomic Defects in α-Iron and Its Diluted Alloys.

This review presents a comprehensive survey on intensive studies performed during the last decades on point defect reactions on α-iron (α-Fe) and its diluted alloys. Our intention is to give an actual account of the knowledge accumulated on this subject, as it has been obtained predominantly by means of the magnetic after-effect (MAE) spectroscopy. After a concise introduction into the theoretical and experimental fundamentals of this technique, the main concern is focused on the presentation and detailed discussion of the MAE spectra arising - after low-temperature electron (e-)- or neutron(n)-irradiation and subsequent annealing - in: (i) high-purity α-Fe and α-Fe doped with (ii) substitutional solutes (like Ni, V, Al, Cu, Ti, Be, Si, Mn, …) or (iii) interstitial solutes (like O, H, C, N). During the course of systematic annealing treatments, these respective spectra undergo dramatic variations at specific temperatures thereby revealing in great detail the underlying intrinsic reactions of the radiation-induced defects, i.e., reorientation, migration, clustering, dissolution and finally annihilation. In alloyed Fe systems the corresponding reaction sequences are even multiplied due to additional interactions between defects and solute atoms. Most valuable information concerning formation-, dissociation- and binding enthalpies of small, mixed clusters (of the type C i V k , N i V k ; i, k ≥ 1) has been obtained in high-purity α-Fe base material which, after charging with C or N, had been e--irradiated. Concerning the basic recovery mechanisms in α-Fe, two complementary results are obtained from the analysis of the various systems: (i) in high-purity and substitutionally alloyed α-Fe the recovery in Stage-III (200 K) is governed by a three-dimensionally migrating (H M I = 0.56 eV) stable interstitial (dumb-bell); (ii) following the formation and dissociation kinetics of small clusters (C1V k , N1V k ) in interstitially alloyed α-Fe the migration enthalpy of the monovacancy must hold the following relation H M N (0.76 eV) < H M C (0.84 eV) < H M V1. These results are in clear agreement with the so-called two-interstitial model (2IM) in α-Fe - a conclusion being further substantiated by a systematic comparison with the results obtained from nonrelaxational techniques, like i.e. positron annihilation (PA), which by their authors are preferentially interpreted in terms of the one-interstitial model (1IM).