Precise Definition of a "Monolayer Point" in Polymer Brush Films for Fabricating Highly Coherent TiO2 Thin Films by Vapor-Phase Infiltration.

In this work, we show that in order to fabricate coherent titania (TiO2) films with precise thickness control, it is critical to generate a complete polymer brush monolayer. To date, demonstrations of such dense polymer monolayer formation that can be utilized for inorganic infiltration have been elusive. We describe a versatile bottom-up approach to covalently and rapidly (60 s processing) graft hydroxyl-terminated poly(2-vinyl pyridine) (P2VP-OH) polymers on silicon substrates. P2VP-OH monolayer films of varying thicknesses can subsequently be used to fabricate high-quality TiO2 films. Our innovative strategy is based upon room-temperature titanium vapor-phase infiltration of the grafted P2VP-OH polymer brushes that can produce TiO2 nanofilms of 2-4 nm thicknesses. Crucial parameters are explored, including molecular weight and solution concentration for grafting dense P2VP-OH monolayers from the liquid phase with high coverage and uniformity across wafer-scale areas (>2 cm2). Additionally, we compare the P2VP-OH polymer systems with another reactive polymer, poly(methyl methacrylate)-OH, and a relatively nonreactive polymer, poly(styrene)-OH. Furthermore, we prove the latter to be effective for surface blocking and deactivation. We show a simple process to graft monolayers for polymers that are weakly interacting with one another but more challenging for reactive systems. Our methodology provides new insight into the rapid grafting of polymer brushes and their ability to form TiO2 films. We believe that the results described herein are important for further expanding the use of reactive and unreactive polymers for fields including area-selective deposition, solar cell absorber layers, and antimicrobial surface coatings.

Area-Selective ALD of Ru on Nanometer-Scale Cu Lines through Dimerization of Amino-Functionalized Alkoxy Silane Passivation Films.

The selective deposition of materials on predefined areas on a substrate is of crucial importance for various applications, such as energy harvesting, microelectronic device fabrication, and catalysis. A representative example of area-confined deposition is the selective deposition of a metal film as the interconnect material in multilevel metallization schemes for CMOS technology. This allows the formation of multilevel structures with standard lithographical techniques while minimizing pattern misalignment and overlay and improving the uniformity of the structures across the wafer. In this work, area-selective deposition of Ru by atomic layer deposition (ALD) is investigated using alkoxy siloxane dielectric passivation layers. In this work, a comparison of several silane organic SAM precursors in terms of Ru ALD ASD performance is reported. The importance of the surface areal concentration of the passivation molecules is demonstrated. According to the in situ X-ray photoelectron spectroscopy film characterization, the ALD blocking layers derived from a (3-trimethoxysilylpropyl) diethylenetriamine (DETA) precursor have the ability to polymerize under ALD-compatible temperatures, such as 250 °C, which leads to a significant inhibition of Ru growth up to 400 ALD cycles. At the same time, the DETA layer can be selectively removed from the oxidized Cu surface by rinsing in acetic acid, which allows selective deposition of ca. 14 nm of Ru on Cu with no Ru detected on the DETA-coated surface by RBS. The approach is successfully tested on 50 nm half-pitch patterned SiO2/Cu lines.

Nitrogen reactive ion etch processes for the selective removal of poly-(4-vinylpyridine) in block copolymer films.

Self-assembling block copolymer (BCP) patterns are one of the main contenders for the fabrication of nanopattern templates in next generation lithography technology. Transforming these templates to hard mark materials is key for pattern transfer and in some cases, involves selectively removing one block from the nanopattern. For poly(styrene)-block-poly(4-vinylpyridine) (PS-b-P4VP), a high χ BCP system which could be potentially incorporated into semiconductor nanofabrication, this selective removal is predominantly done by a wet etch/activation process. Conversely, this process has numerous disadvantages including lack of control and high generation of waste leading to high cost. For these reasons, our motivation was to move away from the wet etch process and optimise a dry etch which would overcome the limitations associated with the activation process. The work presented herein shows the development of a selective plasma etch process for the removal of P4VP cores from PS-b-P4VP nanopatterned film. Results have shown that a nitrogen reactive ion etch plasma has a selectivity for P4VP of 2.2:1 and suggest that the position of the nitrogen in the aromatic ring of P4VP plays a key role in this selectivity. In situ plasma etching and x-ray photoelectron spectrometry measurements were made without breaking vacuum, confirming that the nitrogen plasma has selectivity for removal of P4VP over PS.

Exploring the Role of Adsorption and Surface State on the Hydrophobicity of Rare Earth Oxides.

Rare earth oxides (REOs) are attracting attention for use as cost-effective, high-performance dropwise condensers because of their favorable thermal properties and robust nature. However, to engineer a suitable surface for industrial applications, the mechanism governing wetting must be first fully elucidated. Recent studies exploring the water-wetting state of REOs have suggested that these oxides are intrinsically hydrophobic owing to the unique electronic structure of the lanthanide series. These claims have been countered with evidence that they are inherently hydrophilic and that adsorption of contaminants from the environment is responsible for the apparent hydrophobic nature of these surfaces. Here, using X-ray photoelectron spectroscopy and dynamic water contact angle measurements, we provide further evidence to show that REOs are intrinsically hydrophilic, with ceria demonstrating advancing water contact angles of ≈6° in a clean surface state and similar surface energies to two transition metal oxides (≳72 mJ/m2). Using two model volatile species, it is shown that an adsorption mechanism is responsible for the apparent hydrophobic property observed in REOs as well as in transition metal oxides and silica. This is correlated with the screening of the polar surface energy contribution of the underlying oxide with apparent surface energies reduced to <40 mJ/m2 for the case of nonane adsorption. Moreover, we show that the degree of surface hydroxylation plays an important role in the observed contact angle hysteresis with the receding contact angle of ceria increasing from ∼10° to 45° following thermal annealing in an inert atmosphere. Our findings suggest that high atomic number metal oxides capable of strongly adsorbing volatile species may represent a viable paradigm toward realizing robust surface coating for industrial condensers if certain challenges can be overcome.

In Situ XPS Chemical Analysis of MnSiO3 Copper Diffusion Barrier Layer Formation and Simultaneous Fabrication of Metal Oxide Semiconductor Electrical Test MOS Structures.

Copper/SiO2/Si metal-oxide-semiconductor (MOS) devices both with and without a MnSiO3 barrier layer at the Cu/SiO2 interface have been fabricated in an ultrahigh vacuum X-ray photoelectron spectroscopy (XPS) system, which allows interface chemical characterization of the barrier formation process to be directly correlated with electrical testing of barrier layer effectiveness. Capacitance voltage (CV) analysis, before and after tube furnace anneals of the fabricated MOS structures showed that the presence of the MnSiO3 barrier layer significantly improved electric stability of the device structures. Evidence of improved adhesion of the deposited copper layer to the MnSiO3 surface compared to the clean SiO2 surface was apparent both from tape tests and while probing the samples during electrical testing. Secondary ion mass spectroscopy (SIMS) depth profiling measurements of the MOS test structures reveal distinct differences of copper diffusion into the SiO2 dielectric layers following the thermal anneal depending on the presence of the MnSiO3 barrier layer.