Hamiltonian Engineering with Multicolor Drives for Fast Entangling Gates and Quantum Crosstalk Cancellation.

Quantum computers built with superconducting artificial atoms already stretch the limits of their classical counterparts. While the lowest energy states of these artificial atoms serve as the qubit basis, the higher levels are responsible for both a host of attractive gate schemes as well as generating undesired interactions. In particular, when coupling these atoms to generate entanglement, the higher levels cause shifts in the computational levels that lead to unwanted ZZ quantum crosstalk. Here, we present a novel technique to manipulate the energy levels and mitigate this crosstalk with simultaneous off-resonant drives on coupled qubits. This breaks a fundamental deadlock between qubit-qubit coupling and crosstalk. In a fixed-frequency transmon architecture with strong coupling and crosstalk cancellation, additional cross-resonance drives enable a 90 ns CNOT with a gate error of (0.19±0.02)%, while a second set of off-resonant drives enables a novel CZ gate. Furthermore, we show a definitive improvement in circuit performance with crosstalk cancellation over seven qubits, demonstrating the scalability of the technique. This Letter paves the way for superconducting hardware with faster gates and greatly improved multiqubit circuit fidelities.

Experimental Demonstration of a Resonator-Induced Phase Gate in a Multiqubit Circuit-QED System.

The resonator-induced phase (RIP) gate is an all-microwave multiqubit entangling gate that allows a high degree of flexibility in qubit frequencies, making it attractive for quantum operations in large-scale architectures. We experimentally realize the RIP gate with four superconducting qubits in a three-dimensional circuit-QED architecture, demonstrating high-fidelity controlled-z (cz) gates between all possible pairs of qubits from two different 4-qubit devices in pair subspaces. These qubits are arranged within a wide range of frequency detunings, up to as large as 1.8 GHz. We further show a dynamical multiqubit refocusing scheme in order to isolate out 2-qubit interactions, and combine them to generate a 4-qubit Greenberger-Horne-Zeilinger state.

Creation of a two-dimensional electron gas at an oxide interface on silicon.

In recent years, reversible control over metal-insulator transition has been shown, at the nanoscale, in a two-dimensional electron gas (2DEG) formed at the interface between two complex oxides. These materials have thus been suggested as possible platforms for developing ultrahigh-density oxide nanoelectronics. A prerequisite for the development of these new technologies is the integration with existing semiconductor electronics platforms. Here, we demonstrate room-temperature conductivity switching of 2DEG nanowires formed at atomically sharp LaAlO(3)/SrTiO(3) (LAO/STO) heterointerfaces grown directly on (001) Silicon (Si) substrates. The room-temperature electrical transport properties of LAO/STO heterointerfaces on Si are comparable with those formed from a SrTiO(3) bulk single crystal. The ability to form reversible conducting nanostructures directly on Si wafers opens new opportunities to incorporate ultrahigh-density oxide nanoelectronic memory and logic elements into well-established Si-based platforms.

Note: Thermal properties of magnesium in the 60-150 mK range.

Refrigerators for space and other applications working around 100 mK require lightweight components with good thermal properties. We have measured the thermal properties of high-purity (99.95%) magnesium, which is five times lighter than copper, over the 60-150 mK range and found that it is well-behaved down to these temperatures. Both conductivity and heat capacity are in good agreement with extrapolations from measurements at higher temperatures. The heat capacity per unit volume is about the same as copper and the thermal conductivity about 2.7 times lower than copper of similar residual resistivity ratio, as expected from magnesium's higher room-temperature resistivity.