Green, orange, and red Pr(3+)∶YLiF(4) epitaxial waveguide lasers.

Efficient guided laser oscillation in the visible spectral region is demonstrated with praseodymium-doped YLiF(4) layers grown by liquid phase epitaxy. By exciting Pr(3+) ions at 479.2 nm with an optically pumped semiconductor laser, maximum slope efficiencies of 40% at 639 nm and 32% at 604 nm are obtained in a cw regime. Green laser oscillation at 522.5 nm, in a quasi-cw regime, with an average output power of 66 mW, is demonstrated for the first time, to our knowledge, in a crystalline fluoride epitaxial waveguide. Furthermore, a record efficiency of 60% at 639 nm in the quasi-cw regime is reported.

2.8 W end-pumped Yb3+:LiYF4 waveguide laser.

Continuous wave, room temperature laser oscillation around 1 µm is reported for the first time (to our knowledge) from an Yb(3+)-doped fluoride crystalline waveguide fabricated by using the liquid phase epitaxy technique. Maximum slope efficiencies of 76% and 41% were obtained for laser emissions at 994 and 1020 nm, respectively. A maximum output power of 2.8 W was obtained at 1020 nm by pumping around 980 nm with a high-brightness fiber laser in an 87 mm long V-shaped cavity.

Red and orange Pr3+:LiYF4 planar waveguide laser.

In this Letter we report on room temperature continuous wave laser operation in the red (639 nm, (3)P(0)→(3)F(2)) and orange (604 nm, (3)P(0)→(3)H(6)) spectral regions of Pr(3+)-doped LiYF(4) planar waveguides fabricated by liquid phase epitaxy. Output powers of 25 and 12 mW and slope efficiencies of 5% and 6% were achieved at 639 and 604 nm, respectively, by pumping with an optically pumped semiconductor laser operating at 479.2 nm.

Tm:LiYF4 planar waveguide laser at 1.9 µm.

Continuous wave laser operation at 1.87 µm of liquid-phase epitaxially (LPE) grown Tm(3+)-doped YLiF(4) (Tm:YLF) layers is demonstrated. The waveguide laser delivers 560 mW by pumping with a Ti:Sapphire laser at 780 nm leading to an efficiency of 76% with respect to the absorbed pump power. This constitutes the first Tm(3+)-doped crystalline fluoride waveguide laser ever demonstrated as well as a record in efficiency and output power for an LPE grown waveguide laser operating in the 2 µm spectral range.

Continuous-wave and Q-switched Tm-doped KY(WO4)2 planar waveguide laser at 1.84 µm.

High-quality monoclinic planar waveguide crystals of Tm-doped KY(WO4)2 codoped with Gd3+ and Lu3+ were grown by liquid-phase epitaxy. For the first time, planar waveguide lasing was demonstrated in a monolithic cavity in the 2 µm spectral range. The laser was operated in the Q-switched mode using a Cr2+:ZnSe crystal as saturable absorber and in the continuous-wave regimes. The Q-switched planar waveguide laser delivered pulse energies up to 120 nJ at a repetition rate of 7 kHz.

Mirrorless buried waveguide laser in monoclinic double tungstates fabricated by a novel combination of ion milling and liquid phase epitaxy.

Buried channel waveguides were fabricated by liquid phase epitaxial growth of a lattice-matched KY(0.58)Gd(0.22)Lu(0.17)Tm(0.03)(WO4)2 film on a microstructured KY(WO4)2 substrate. Channels were transferred to the substrates by standard photolithography and Ar-ion milling. The bottom and sidewalls of the milled channels were smooth enough (rms roughness = 70 nm and 20 nm, respectively) to favour the epitaxial growth of the active layer without defects at the boundary of substrate/epitaxial layer. The refractive index contrast was sufficient to enable light confinement and guided modes with low scattering losses were observed at wavelengths between 1440 nm and 1640 nm. CW laser operation at 1840 nm at room temperature was observed with feedback provided only by Fresnel reflection at the end faces, with slope efficiencies of 4% and 9% for TE and TM polarizations, respectively.