Who wants 'the worst of the worst'? Rationales for and consequences of third country resettlement of Guantanamo Bay detainees.

Against the backdrop of countries increasingly being confronted with undesirable but unreturnable non-citizen terrorist suspects, this article describes the resettlement process of 150 cleared but unreturnable Guantanamo Bay detainees. Merely 13% of these detainees have been resettled in full democracies, compared to 52% in authoritarian regimes. Using Starkley et al.'s concept of 'zone agreement' the article explains how the U.S. particularly managed to incentivize pragmatically oriented - rather than idealistically motivated - governments to engage in third country resettlement [16]. From the perspective of the U.S. the resettlement scheme can be considered relatively successful, while the experiences of resettlement countries and the resettled detainees themselves have been very mixed.

Lock-in Ultrafast Electron Microscopy Simultaneously Visualizes Carrier Recombination and Interface-Mediated Trapping.

Visualizing charge carrier flow over interfaces or near surfaces meets great challenges concerning resolution and vastly different time scales of bulk and surface dynamics. Ultrafast or four-dimensional scanning electron microscopy (USEM) using a laser pump electron probe scheme circumvents the optical diffraction limit, but disentangling surface-mediated trapping and ultrafast carrier dynamics in a single measurement scheme has not yet been demonstrated. Here, we present lock-in USEM, which simultaneously visualizes fast bulk recombination and slow trapping. As a proof of concept, we show that the surface termination on GaAs, i.e., Ga or As, profoundly influences ultrafast movies. We demonstrate the differences can be attributed to trapping-induced surface voltages of approximately 100-200 mV, which is further supported by secondary electron particle tracing calculations. The simultaneous visualization of both competing processes opens new perspectives for studying carrier transport in layered, nanostructured, and two-dimensional semiconductors, where carrier trapping constitutes a major bottleneck for device efficiency.

Robust Sample Preparation of Large-Area In- and Out-of-Plane Cross Sections of Layered Materials with Ultramicrotomy.

Layered materials (LMs) such as graphene or MoS2 have attracted a great deal of interest recently. These materials offer unique functionalities due to their structural anisotropy characterized by weak van der Waals bonds along the out-of-plane axis and covalent bonds in the in-plane direction. A central requirement to access the structural information on complex nanostructures built upon LMs is to control the relative orientation of each sample prior to their inspection, e.g., with transmission electron microscopy (TEM). However, developing sample preparation methods that result in large inspection areas and ensure full control over the sample orientation while avoiding damage during the transfer to the TEM grid is challenging. Here, we demonstrate the feasibility of deploying ultramicrotomy for the preparation of LM samples in TEM analyses. We show how ultramicrotomy leads to the reproducible large-scale production of both in-plane and out-of-plane cross sections, with bulk vertically oriented MoS2 and WS2 nanosheets as a proof of concept. The robustness of the prepared samples is subsequently verified by their characterization by means of both high-resolution TEM and Raman spectroscopy measurements. Our approach is fully general and should find applications for a wide range of materials as well as of techniques beyond TEM, thus paving the way to the systematic large-area mass-production of cross-sectional specimens for structural and compositional studies.