RESUMO
In this manuscript we discuss state of the art hybrid integration techniques and III-V/Si active components with an emphasis on hybrid distributed feedback (DFB) lasers for telecom applications. We review our work on ultra-compact III-V/Si DFB lasers and further describe design considerations and challenges associated with electrically pumped hybrid lasers. We conclude with a perspective on DFB lasers with extremely small footprint, a direction for future research with potential applications to densely-packed optical interconnects.
RESUMO
Electrically driven subwavelength scale metallo-dielectric pedestal pillar lasers are designed and experimentally demonstrated. The metallo-dielectric cavity significantly enhances the quality factor (Q > 1500) of the wavelength and subwavelength scale lasers and the pedestal structure significantly reduces the threshold gain (< 400 cm(-1)) which can potentially enable laser operation at room temperature. We observed continuous wave lasing in 750 nm gain core radius laser at temperatures between 77 K and 140 K with a threshold current of 50 µA (at 77 K). We also observed lasing from a 355 nm gain core radius laser at temperatures between 77 K and 100 K.
RESUMO
An etch-free fabrication technique for creating low loss silicon waveguides in the silicon-on-insulator material system is proposed and demonstrated. The approach consists of local oxidation of a silicon-on-insulator chip covered with a e-beam patterned hydrogen silsesquioxane mask. A single oxidation step converts hydrogen silsesquioxane to a glass-like compound and simultaneously defines the waveguides, bypassing the need for any wet or dry etching steps. The spectral response of ring resonators fabricated using this technique was used to characterize the waveguide losses. Intrinsic Q-factors as high as 1.57 × 10(6), corresponding to a waveguide loss of 0.35 dB/cm, were measured.
