Interlayer Affected Diamond Electrochemistry.

Diamond electrochemistry is primarily influenced by quantities of sp3-carbon, surface terminations, and crystalline structure. In this work, a new dimension is introduced by investigating the effect of using substrate-interlayers for diamond growth. Boron and nitrogen co-doped nanocrystalline diamond (BNDD) films are grown on Si substrate without and with Ti and Ta as interlayers, named BNDD/Si, BNDD/Ti/Si, and BNDD/Ta/Ti/Si, respectively. After detailed characterization using microscopies, spectroscopies, electrochemical techniques, and density functional theory simulations, the relationship of composition, interfacial structure, charge transport, and electrochemical properties of the interface between diamond and metal is investigated. The BNDD/Ta/Ti/Si electrodes exhibit faster electron transfer processes than the other two diamond electrodes. The interlayer thus determines the intrinsic activity and reaction kinetics. The reduction in their barrier widths can be attributed to the formation of TaC, which facilitates carrier tunneling, and simultaneously increases the concentration of electrically active defects. As a case study, the BNDD/Ta/Ti/Si electrode is further employed to assemble a redox-electrolyte-based supercapacitor device with enhanced performance. In summary, the study not only sheds light on the intricate relationship between interlayer composition, charge transfer, and electrochemical performance but also demonstrates the potential of tailored interlayer design to unlock new capabilities in diamond-based electrochemical devices.

Graphene-Based Optoelectronic Mixer Device for Time-of-Flight Distance Measurements for Enhanced 3D Imaging Applications.

A large and growing number of applications benefit from innovative and powerful 3D image sensors. Graphene photodetectors can achieve 3D sensing functionalities by intrinsic optoelectronic frequency mixing due to the nonlinear output characteristics of the sensor. In first proof of principle distance measurement demonstrations, we achieve modulation frequencies of 3.1 MHz, signal-to-noise ratios of ∼40 dB, distance detection up to at least 1 m, and a mean accuracy of 25.6 mm. The scalable More than Moore detector approach enables geometrical fill factors close to 100% and can easily complement powerful functionalities by simple back-end integration on top of CMOS electronics.

High-speed nonlinear focus-induced photoresponse in amorphous silicon photodetectors for ultrasensitive 3D imaging applications.

A large and growing number of applications benefit from simple, fast and highly sensitive 3D imaging sensors. The Focus-Induced Photoresponse (FIP) can achieve 3D sensing functionalities by simply evaluating the irradiance dependent nonlinear sensor response in defect-based materials. Since this advantage is intricately associated to a slow response, the electrical bandwidth of present FIP detectors is limited to a few [Formula: see text] only. The devices presented in this work enable modulation frequencies of 700 kHz and beat frequency detection up to at least 3.8 MHz, surpassing the bandwidth of reported device architectures by more than two orders of magnitude. The sensors achieve a SNR of at least [Formula: see text] at [Formula: see text] and a DC FIP detection limit of 0.6 µW/mm2. The mature and scalable low-temperature a-Si:H process technology allows operating the device under ambient air conditions waiving additional back-end passivation, geometrical fill factors of [Formula: see text] and tailoring the FIP towards adjustable 3D sensing applications.

High Photocurrent in Gated Graphene-Silicon Hybrid Photodiodes.

Graphene/silicon (G/Si) heterojunction based devices have been demonstrated as high responsivity photodetectors that are potentially compatible with semiconductor technology. Such G/Si Schottky junction diodes are typically in parallel with gated G/silicon dioxide (SiO2)/Si areas, where the graphene is contacted. Here, we utilize scanning photocurrent measurements to investigate the spatial distribution and explain the physical origin of photocurrent generation in these devices. We observe distinctly higher photocurrents underneath the isolating region of graphene on SiO2 adjacent to the Schottky junction of G/Si. A certain threshold voltage (VT) is required before this can be observed, and its origins are similar to that of the threshold voltage in metal oxide semiconductor field effect transistors. A physical model serves to explain the large photocurrents underneath SiO2 by the formation of an inversion layer in Si. Our findings contribute to a basic understanding of graphene/semiconductor hybrid devices which, in turn, can help in designing efficient optoelectronic devices and systems based on such 2D/3D heterojunctions.

Visualization of astaxanthin localization in HT29 human colon adenocarcinoma cells by combined confocal resonance Raman and fluorescence microspectroscopy.

Astaxanthin, a carotenoid found in plants and seafood, exhibits antiproliferative, antioxidant and anticarcinogenic properties. We show that astaxanthin delivered with tetrahydrofuran is effectively taken up by cultured colon adenocarcinoma cells and is localized mostly in the cytoplasm as detected by confocal resonance Raman and broad-band fluorescence microspectroscopy image analysis. Cells incubated with beta-carotene at the same concentration as astaxanthin (10 microM) showed about a 50-fold lower cellular amount of beta-carotene, as detected by HPLC. No detectable Raman signal of beta-carotene was found in cells, but a weak broad-band fluorescence signal of beta-carotene was observed. beta-Carotene, like astaxanthin, was localized mostly in the cytoplasm. The heterogeneity of astaxanthin and beta-carotene cellular distribution in cells of intestinal origin suggests that the possible defense against reactive molecules by carotenoids in these cells may also be heterogeneous.