Detection of Si doping in the AlN/GaN MQW using Super X - EDS measurements.

A multiple-quantum-well structure consisting of 40 periods of AlN/GaN:Si was investigated using a transmission electron microscope equipped with energy-dispersive X-ray spectroscopy. The thicknesses of the AlN barriers and the GaN quantum wells were 4 nm and 6 nm, respectively. The QW layers were doped with Si to a concentration of 1.3×1019cm-3 (0.012 % at). The procedure for quantifying such a doping level using AlN as a standard is presented. The EDS results (0.013 % at) are compared with secondary ion mass spectrometry measurements (0.05 % at).

Direct Measurement of Hyperfine Shifts and Radio Frequency Manipulation of Nuclear Spins in Individual CdTe/ZnTe Quantum Dots.

We achieve direct detection of electron hyperfine shifts in individual CdTe/ZnTe quantum dots. For the previously inaccessible regime of strong magnetic fields B_{z}≳0.1 T, we demonstrate robust polarization of a few-hundred-particle nuclear spin bath, with an optical initialization time of ∼1 ms and polarization lifetime exceeding ∼1 s. Nuclear magnetic resonance spectroscopy of individual dots reveals strong electron-nuclear interactions characterized by Knight fields |B_{e}|≳50 mT, an order of magnitude stronger than in III-V semiconductor quantum dots. Our studies confirm II-VI semiconductor quantum dots as a promising platform for hybrid electron-nuclear spin qubit registers, combining the excellent optical properties comparable to III-V dots and the dilute nuclear spin environment similar to group-IV semiconductors.

High temperature oxidation of iron-iron oxide core-shell nanowires composed of iron nanoparticles.

This work describes an oxidation process of iron-iron oxide core-shell nanowires at temperatures between 100 °C and 800 °C. The studied nanomaterial was synthesized through a simple chemical reduction of iron trichloride in an external magnetic field under a constant flow of argon. The electron microscopy investigations allowed determining that the as-prepared nanowires were composed of self-assembled iron nanoparticles which were covered by a 3 nm thick oxide shell and separated from each other by a thin interface layer. Both these layers exhibited an amorphous or highly-disordered character which was traced by means of transmission electron microscopy and Mössbauer spectroscopy. The thermal oxidation was carried out under a constant flow of argon which contained the traces of oxygen. The first stage of process was related to slow transformations of amorphous Fe and amorphous iron oxides into crystalline phases and disappearance of interfaces between iron nanoparticles forming the studied nanomaterial (range: 25-300 °C). After that, the crystalline iron core and iron oxide shell became oxidized and signals for different compositions of iron oxide sheath were observed (range: 300-800 °C) using X-ray diffraction, Raman spectroscopy and Mössbauer spectroscopy. According to the thermal gravimetric analysis, the nanowires heated up to 800 °C under argon atmosphere gained 37% of mass with respect to their initial weight. The structure of the studied nanomaterial oxidized at 800 °C was mainly composed of α-Fe2O3 (∼ 93%). Moreover, iron nanowires treated above 600 °C lost their wire-like shape due to their shrinkage and collapse caused by the void coalescence.

Growth by molecular beam epitaxy and properties of inclined GaN nanowires on Si(001) substrate.

The growth mode and structural and optical properties of novel type of inclined GaN nanowires (NWs) grown by plasma-assisted MBE on Si(001) substrate were investigated. We show that due to a specific nucleation mechanism the NWs grow epitaxially on the Si substrate without any Si(x)N(y) interlayer, first in the form of zinc-blende islands and then as double wurtzite GaN nanorods with Ga-polarity. X-ray measurements show that orientation of these nanowires is epitaxially linked to the symmetry of the substrate so that [0001] axis of w-GaN nanowire is directed along the [111]Si axis. This is different from commonly observed behavior of self-induced GaN NWs that are N-polar and grow perpendicularly to the surface of nitridized silicon substrate independently on its orientation. The inclined NWs exhibit bright luminescence of bulk donor-bound excitons (D(0)X) at 3.472 eV and exciton-related peak at 3.46 eV having a long lifetime (0.7 ns at 4 K) and observable up to 50 K.

Influence of substrate nitridation temperature on epitaxial alignment of GaN nanowires to Si(111) substrate.

An arrangement of self-assembled GaN nanowires (NWs) grown by plasma-assisted molecular beam epitaxy on a Si(111) substrate is studied as a function of the temperature at which the substrate is nitridized before GaN growth. We show that the NWs grow with the c-axis perpendicular to the substrate surface independently of nitridation temperature with only a slight improvement in tilt coherency for high nitridation temperatures. A much larger influence of the substrate nitridation process on the in-plane arrangement of NWs is found. For high (850 °C) and medium (450 °C) nitridation temperatures angular twist distributions are relatively narrow and NWs are epitaxially aligned to the substrate in the same way as commonly observed in GaN on Si(111) planar layers with an AlN buffer. However, if the substrate is nitridized at low temperature (~150 °C) the epitaxial relationship with the substrate is lost and an almost random in-plane orientation of GaN NWs is observed. These results are correlated with a microstructure of silicon nitride film created on the substrate as the result of the nitridation procedure.