Downshift of the Ni d band center over Ni nanoparticles in situ confined within an amorphous silicon nitride matrix.

Herein, nanocomposites made of Ni nanoparticles in situ distributed in an amorphous silicon nitride (Ni/a-Si3N4) matrix, on the one hand, and within an amorphous silicon dioxide (Ni/a-SiO2) matrix, on the other hand, were synthesized from the same Ni-modified polysilazane precursor. In both compounds, the Ni/Si atomic ratio (0.06-0.07), average Ni nanocrystallite size (7.0-7.6 nm) and micro/mesoporosity of the matrix were rigorously fixed. Hydrogen (H2)-temperature-programmed desorption (TPD) profile analysis revealed that the activation energy for H2 desorption at about 100-130 °C evaluated for the Ni/a-Si3N4 sample (47.4 kJ mol-1) was lower than that for the Ni/a-SiO2 sample (68.0 kJ mol-1). Mechanistic study with X-ray photoelectron spectroscopy (XPS) analysis and density functional theory (DFT) calculations revealed that, at Ni nanoparticle/matrix heterointerfaces, Ni becomes more covalently bonded to N atoms in the a-Si3N4 matrix compared to O atoms in the a-SiO2 matrix. Therefore, based on experimental and theoretical studies, we elucidated that nickel-nitrogen (Ni-N) interactions at the heterointerface lead to remarkable Ni d band broadening and downshifting of the d band center relative to those generated by Ni-oxygen (Ni-O) interactions at the heterointerface. This facilitates H2 desorption, as experimentally observed in the Ni/a-Si3N4 sample.

Defect engineering of 1T'MX2(M= Mo, W andX= S, Se) transition metal dichalcogenide-based electrocatalyst for alkaline hydrogen evolution reaction.

The alkaline electrolyzer (AEL) is a promising device for green hydrogen production. However, their energy conversion efficiency is currently limited by the low performance of the electrocatalysts for the hydrogen evolution reaction (HER). As such, the electrocatalyst design for the high-performance HER becomes essential for the advancement of AELs. In this work, we used both hydrogen (H) and hydroxyl (OH) adsorption Gibbs free energy changes as the descriptors to investigate the catalytic HER performance of 1T' transition metal dichalcogenides (TMDs) in an alkaline solution. Our results reveal that the pristine sulfides showed better alkaline HER performance than their selenide counterparts. However, the activities of all pristine 1T' TMDs are too low to dissociate water. To improve the performance of these materials, defect engineering techniques were used to design TMD-based electrocatalysts for effective HER activity. Our density functional theory results demonstrate that introducing single S/Se vacancy defects can improve the reactivities of TMD materials. Yet, the desorption of OH becomes the rate-determining step. Doping defective MoS2with late 3d transition metal (TM) atoms, especially Cu, Ni, and Co, can regulate the reactivity of active sites for optimal OH desorption. As a result, the TM-doped defective 1T' MoS2can significantly enhance the alkaline HER performance. These findings highlight the potential of defect engineering technologies for the design of TMD-based alkaline HER electrocatalysts.

Impact of the local atomic structure on the thermal conductivity of amorphous Ge2Sb2Te5.

Thermal properties are expected to be sensitive to the network topology, and however, no clearcut information is available on how the thermal conductivity of amorphous systems is affected by details of the atomic structure. To address this issue, we use as a target system a phase-change amorphous material (i.e., Ge2Sb2Te5) simulated by first-principles molecular dynamics combined with the approach-to-equilibrium molecular dynamics technique to access the thermal conductivity. Within the density-functional theory, we employed two models sharing the same exchange-correlation functional but differing in the pseudopotential (PP) implementation [namely, Trouiller-Martins (TM) and Goedecker, Teter, and Hutter (GTH)]. They are both compatible with experimental data, and however, the TM PP construction results in a Ge tetrahedral environment largely predominant over the octahedral one, although the proportion of tetrahedra is considerably smaller when the GTH PP is used. We show that the difference in the local structure between TM and GTH models impacts the vibrational density of states while the thermal conductivity does not feature any appreciable sensitivity to such details. This behavior is rationalized in terms of extended vibrational modes.

Low temperature in situ immobilization of nanoscale fcc and hcp polymorphic nickel particles in polymer-derived Si-C-O-N(H) to promote electrocatalytic water oxidation in alkaline media.

We synthesized nickel (Ni) nanoparticles (NPs) in a high specific surface area (SSA) p-block element-containing inorganic compound prepared via the polymer-derived ceramics (PDC) route to dispatch the obtained nanocomposite towards oxygen evolution reaction (OER). The in situ formation of Ni NPs in an amorphous silicon carboxynitride (Si-C-O-N(H)) matrix is allowed by the reactive blending of a polysilazane, NiCl2 and DMF followed by the subsequent thermolysis of the Ni : organosilicon polymer coordination complex at a temperature as low as 500 °C in flowing argon. The final nanocomposite displays a BET SSA as high as 311 m2 g-1 while the structure of the NPs corresponds to face-centred cubic (fcc) Ni along with interstitial-atom free (IAF) hexagonal close-packed (hcp) Ni as revealed by XRD. A closer look into the compound through FEG-SEM microscopy confirms the formation of pure metallic Ni, while HR-TEM imaging reveals the occurrence of Ni particles featuring a fcc phase and surrounded by carbon layers; thus, forming core-shell structures, along with Ni NPs in an IAF hcp phase. By considering that this newly synthesized material contains only Ni without doping (e.g., Fe) with a low mass loading (0.15 mg cm-2), it shows promising OER performances with an overpotential as low as 360 mV at 10 mA cm-2 according to the high SSA matrix, the presence of the IAF hcp Ni NPs and the development of core-shell structures. Given the simplicity, the flexibility, and the low cost of the proposed synthesis approach, this work opens the doors towards a new family of very active and stable high SSA nanocomposites made by the PDC route containing well dispersed and accessible non-noble transition metals for electrocatalysis applications.

First-principles thermal transport in amorphous Ge2Sb2Te5 at the nanoscale.

Achieving a precise understanding of nanoscale thermal transport in phase change materials (PCMs), such as Ge2Sb2Te5 (GST), is the key of thermal management in nanoelectronics, photonic and neuromorphic applications using non-volatile memories. By resorting to a first-principles approach to calculate the thermal conductivity of amorphous GST, we found that size effects and heat transport via propagative modes persist well beyond extended range order distances typical of disordered network-forming materials. Values obtained are in quantitative agreement with the experimental data, by revealing a strong size dependence of the thermal conductivity down to the 1.7-10 nm range, fully covering the scale of current PCMs-based devices. In particular, a reduction of thermal conductivity as large as 75% occurs for dimensions lying below 2 nm. These results provide a quantitative description of the thermal properties of amorphous GST at the nanoscale and are expected to underpin the development of PCM-based device applications.

Atomic Structure of Glassy GeTe4 as a Playground to Assess the Performances of Density Functional Schemes Accounting for Dispersion Forces.

The atomic structure of glassy GeTe4 is obtained in the framework of first-principles molecular dynamics (FPMD) by considering five different approaches for the description of the electronic structure within density functional theory (DFT). Among these schemes, one is not corrected by accounting for the dispersion forces and it is based on the BLYP exchange-correlation (XC) functional, while all of the others consider the dispersion forces according to different theoretical strategies. In particular, by maintaining the BLYP expression for the XC functional, two of them (BLYP-D2 and BLYP-D3) exploit the Grimme expressions for the dispersion forces, while the fourth scheme is based on the maximally localized Wannier functions (MLWFs). Finally, we also considered the rVV10 functional constructed to include seamlessly the dispersion part. Our results point out the better performances of BLYP-D3 and MLWF in terms of comparison with experimental data for the total pair correlation functions, with BLYP-D2 and rVV10 being closer to the uncorrected BLYP data. The implications of such findings are discussed by considering the overall limited impact of dispersion forces on the atomic structure of glassy GeTe4.

Short range order and network connectivity in amorphous AsTe3: a first principles, machine learning, and XRD study.

The atomic scale structure of amorphous AsTe3 is investigated through X-ray diffraction, first-principles molecular dynamics (FPMD), and machine learning interatomic potentials (ML-GAP) obtained by exploiting the ab initio data. We obtain good agreement between the measured and modelled diffraction patterns. Our FPMD results show that As and Te obey the 8-N rule with average coordination numbers of 3 and 2, respectively. We find that small fractions of under and over coordinated As and Te atoms are present in the amorphous phase with about 6% (FPMD), and 13% (ML-GAP) of 3-fold Te. As is found at the center of pyramidal structures predominantly linked through Ten chains rather than rings. Despite the low As concentration in AsTe3, its local environment features a very high chemical disorder that manifests through the occurrence of homopolar bonds including at least 57% of As atoms.

Oxide versus Nonoxide Cathode Materials for Aqueous Zn Batteries: An Insight into the Charge Storage Mechanism and Consequences Thereof.

Aqueous Zn-ion batteries, which are being proposed as large-scale energy storage solutions because of their unparalleled safety and cost advantage, are composed of a positive host (cathode) material, a metallic zinc anode, and a mildly acidic aqueous electrolyte (pH ≈ 3-7). Typically, the charge storage mechanism is believed to be reversible Zn2+ (de)intercalation in the cathode host, with the exception of α-MnO2, for which multiple vastly different and contradicting mechanisms have been proposed. However, our present study, combining electrochemical, operando X-ray diffraction, electron microscopy in conjunction with energy-dispersive X-ray spectroscopy, and in situ pH evolution analyses on two oxide hosts-tunneled α-MnO2 and layered V3O7·H2O vis-à-vis two nonoxide hosts-layered VS2 and tunneled Zn3[Fe(CN)6]2, suggests that oxides and nonoxides follow two dissimilar charge storage mechanisms. While the oxides behave as dominant proton intercalation materials, the nonoxides undergo exclusive zinc intercalation. Stabilization of H+ on the hydroxyl-terminated oxide surface is revealed to facilitate the proton intercalation by a preliminary molecular dynamics simulation study. Proton intercalation for both oxides leads to the precipitation of layered double hydroxide (LDH)-Zn4SO4(OH)6·5H2O with a ZnSO4/H2O electrolyte and a triflate anion (CF3SO3-)-based LDH with a Zn(SO3CF3)2/H2O electrolyte-on the electrode surface. The LDH precipitation buffers the pH of the electrolytes to a mildly acidic value, sustaining the proton intercalation to deliver large specific capacities for the oxides. Moreover, we also show that the stability of the LDH precipitate is crucial for the rechargeability of the oxide cathodes, revealing a critical link between the charge storage mechanism and the performance of the oxide hosts in aqueous zinc batteries.

Atomic-Scale Simulation of Electrochemical Processes at Electrode/Water Interfaces under Referenced Bias Potential.

Based on constant Fermi-level molecular dynamics and a proper alignment scheme, we perform simulations of the Pt(111)/water interface under variable bias potential referenced to the standard hydrogen electrode (SHE). Our scheme yields a potential of zero charge µpzc of ∼0.22 eV relative to the SHE and a double layer capacitance Cdl of ≃19 µF cm-2, in excellent agreement with experimental measurements. In addition, we study the structural reorganization of the electrical double layer for bias potentials ranging from -0.92 eV to +0.44 eV and find that Odown configurations, which are dominant at potentials above the pzc, reorient to favor Hdown configurations as the measured potential becomes negative. Our modeling scheme allows one to not only access atomic-scale processes at metal/water interfaces, but also to quantitatively estimate macroscopic electrochemical quantities.

First-Principles Study of Dissociation Processes for the Synthesis of Fe and Co Oxide Nanoparticles.

Thermal decomposition is a practical and reliable tool to synthesize nanoparticles with monodisperse size distribution and reproducible accuracy. The nature of the precursor molecules and their interaction with the environment during the synthesis process have a direct impact on the resulting nanoparticles. Our study focuses on widely used transition-metal (Co, Fe) stearates precursors and their thermal decomposition reaction pathway. We show how the nature of the metal and the presence or absence of water molecules, directly related to the humidity conditions during the synthesis process, affect the decomposition mechanism and the resulting transition-metal oxide building blocks. This, in turn, has a direct effect on the physical and chemical properties of the produced nanoparticles and deeply influences their composition and morphology.

Electron trap states at InGaAs/oxide interfaces under inversion through constant Fermi-level ab initio molecular dynamics.

We employ constant-Fermi-level ab initio molecular dynamics to investigate defects at the InGaAs/oxide interface upon inversion. We adopt a substoichiometric amorphous model for modelling the structure at the interface and investigate the formation of defect structures upon setting the Fermi-level above the conduction band minimum. The defect formation is detected through both an analysis of the atomic structure and a Wannier-decomposition of the electronic structure. This computer driven approach is able to retrieve In and Ga lone-pair defects and As-As dimer/dangling bond defects, in agreement with previous studies based on physical intuition. In addition, the present simulation reveals hitherto unidentified defect structures consisting of metallic In-In, In-Ga, and Ga-Ga bonds. The defect charge transition levels of such metallic bonds in Al2O3 are then determined through a hybrid functional scheme and found to be consistent with the defect density measured at InGaAs/Al2O3 interfaces. Hence, we conclude that both In and Ga lone pairs dangling bonds and metallic In-In bonds are valid candidate defects for charge trapping at InGaAs/oxide interfaces upon charge carier inversion. This study demonstrates the effectiveness of constant-Fermi-level ab initio molecular dynamics in revealing and identifying defects at InGaAs/oxide interfaces.

Impact of dispersion forces on the atomic structure of a prototypical network-forming disordered system: The case of liquid GeSe2.

A set of structural properties of liquid GeSe2 are calculated by using first-principles molecular dynamics and including, for the first time, van der Waals dispersion forces. None of the numerous atomic-scale simulations performed in the past on this prototypical disordered network-forming material had ever accounted for dispersion forces in the expression of the total energy. For this purpose, we employed either the Grimme-D2 or the maximally localized Wannier function scheme. We assessed the impact of dispersion forces on properties such as partial structure factors, pair correlation functions, bond angle distribution, and number of corner vs edge sharing connections. The maximally localized Wannier function scheme is more reliable than the Grimme-D2 scheme in reproducing existing first-principles results. In particular, the Grimme-D2 scheme worsens the agreement with experiments in the case of the Ge-Ge pair correlation function. Our study shows that the impact of dispersion forces on disordered chalcogenides has to be considered with great care since it cannot be necessarily the same when adopting different recipes.

Redox Levels through Constant Fermi-Level ab Initio Molecular Dynamics.

We develop a method to determine redox levels of half reactions through the use of ab initio molecular dynamics evolving at constant Fermi energy. This scheme models the effect of an electrode by controlling the charge transfer between the single-particle energy levels of the system and an electron reservoir set at a given potential during the dynamics. Like the thermodynamic integration method, our scheme does not require a priori knowledge of the products of the reaction, which can simply be obtained by driving the reaction through the variation of the Fermi level. The simulations are performed subject to periodic boundary conditions in the absence of any counterelectrode. We extract the redox level from the evolution of the Kohn-Sham energies upon charging (or discharging) the system. Using Janak's theorem and assuming a quadratic evolution of the Kohn-Sham energy of the highest occupied state upon charging, we demonstrate that our scheme for the determination of redox levels is equivalent to the thermodynamic integration method. The approach is illustrated for the redox couples Fe2+/Fe3+, HO2•/HO2-, and MnO4-/MnO4-2 in aqueous solution and yields redox potentials differing by less than 0.1 eV from respective ones achieved with the thermodynamic integration method.

Thermal conductivity of glassy GeTe4 by first-principles molecular dynamics.

A transient thermal regime is achieved in glassy GeTe4 by first-principles molecular dynamics following the recently proposed "approach-to-equilibrium" methodology. The temporal and spatial evolution of the temperature do comply with the time-dependent solution of the heat equation. We demonstrate that the time scales required to create the hot and the cold parts of the system and observe the resulting approach to equilibrium are accessible to first-principles molecular dynamics. Such a strategy provides the thermal conductivity from the characteristic decay time. We rationalize in detail the impact on the thermal conductivity of the initial temperature difference, the equilibration duration, and the main simulation features.

Structure of amorphous GeSe9 by neutron diffraction and first-principles molecular dynamics: Impact of trajectory sampling and size effects.

The structure of glassy GeSe9 was investigated by combining neutron diffraction with density-functional-theory-based first-principles molecular dynamics. In the simulations, three different models of N = 260 atoms were prepared by sampling three independent temporal trajectories, and the glass structures were found to be substantially different from those obtained for models in which smaller numbers of atoms or more rapid quench rates were employed. In particular, the overall network structure is based on Sen chains that are cross-linked by Ge(Se4)1/2 tetrahedra, where the latter are predominantly corner as opposed to edge sharing. The occurrence of a substantial proportion of Ge-Se-Se connections does not support a model in which the material is phase separated into Se-rich and GeSe2-rich domains. The appearance of a first-sharp diffraction peak in the Bhatia-Thornton concentration-concentration partial structure factor does, however, indicate a non-uniform distribution of the Ge-centered structural motifs on an intermediate length scale.

Origin of structural analogies and differences between the atomic structures of GeSe4 and GeS4 glasses: A first principles study.

First-principles molecular dynamics simulations based on density functional theory are employed for a comparative study of structural and bonding properties of two stoichiometrically identical chalcogenide glasses, GeSe4 and GeS4. Two periodic cells of 120 and 480 atoms are adopted. Both glasses feature a coexistence of Ge-centered tetrahedra and Se(S) homopolar connections. Results obtained for N = 480 indicate substantial differences at the level of the Se(S) environment, since Ge-Se-Se connections are more frequent than the corresponding Ge-S-S ones. The presence of a more prominent first sharp diffraction peak in the total neutron structure factor of glassy GeS4 is rationalized in terms of a higher number of large size rings, accounting for extended Ge-Se correlations. Both the electronic density of states and appropriate electronic localization tools provide evidence of a higher ionic character of Ge-S bonds when compared to Ge-Se bonds. An interesting byproduct of these investigations is the occurrence of discernible size effects that affect structural motifs involving next nearest neighbor distances, when 120 or 480 atoms are used.

The structure of liquid GeSe revisited: a first principles molecular dynamics study.

Early first-principles molecular dynamics results on liquid GeSe were characterized by shortcomings in the description of Ge-Ge (and to a lesser extent Se-Se) short range correlations. In that case the exchange-correlation functional adopted was the one devised by Perdew and Wang (PW91). In the search of improvements in the atomic-scale modelling of this liquid, we have produced new sets of data by employing two different schemes for the exchange-correlation part within the density functional theory approach. The two functionals selected are those proposed by Becke, Lee, Yang, and Parr (BLYP) and by Perdew, Burke, and Ernzerhof (PBE). The PBE results turned out to be quite similar to the PW91 ones. The BLYP results feature instead a better account of the Ge-Ge first shell of neighbors, correctly exhibiting two clear maxima separated by a deep minimum. Due to the increase in the number of the tetrahedral structural units, the atomic mobility of Ge and Se atoms in the network is reduced with respect to the PW91 case. This brings the diffusion coefficients of the two species down to values close to those of liquid Ge2Se3 and liquid GeSe2.