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1.
ACS Omega ; 9(4): 4594-4599, 2024 Jan 30.
Artigo em Inglês | MEDLINE | ID: mdl-38313501

RESUMO

The challenge of achieving ultrafast switching of electric polarization in ferroelectric materials remains unsolved as there is no experimental evidence of such switching to date. In this study, we developed an enhanced model that describes switching within a two-dimensional space of generalized coordinates at THz pulses. Our findings indicate that stable switching in barium titanate cannot be achieved through a single linearly polarized pulse. When the intensity of the linearly polarized pulse reaches a certain threshold, the sample experiences depolarization but not stable switching. Our study also reveals that phonon friction plays a minor role in the switching dynamics and provides an estimate of the optimal parameters for the perturbing pulse with the lowest intensity that results in the depolarization of an initially polarized sample.

2.
Nanomaterials (Basel) ; 13(13)2023 Jun 28.
Artigo em Inglês | MEDLINE | ID: mdl-37446477

RESUMO

This study investigates the impact of narrow-band terahertz pulses on the ferroelectric order parameter in Ba0.8Sr0.2TiO3 films on various substrates. THz radiation in the range of 1-2 THz with the pulse width of about 0.15 THz was separated from a broadband pulse with the interference technique. The 375 nm thick BST film on a MgO (001) substrate exhibits enhanced THz-induced second harmonic generation when excited by THz pulses with a central frequency of 1.6 THz, due to the resonant excitation of the soft phonon mode. Conversely, the BST film on a Si (001) substrate shows no enhancement, due to its polycrystalline state. The 800 nm thick BST film on a MgO (111) substrate demonstrates the maximum of a second harmonic generation signal when excited by THz pulses at 1.8 THz, which is close to the soft mode frequency for the (111) orientation. Notably, the frequency spectrum of the BST/MgO (111) film reveals peaks at both the fundamental and doubled frequencies, and their intensities depend, respectively, linearly and quadratically on the THz pulse electric field strength.

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