RESUMO
Four nanostructured active semiconducting materials currently used in electronic inks have been structurally characterised using a combination of small angle scattering techniques and scanning electron microscopy. The percolation theory and scaling laws have been used to obtain quantitative correlations of the network topologies and the local micro-structures with the electronic and electrical properties of the printed, electronic devices. The small angle light scattering has been used to expand the lower q-range of the Ultra Small Angle x-ray Scattering curves of the 2503 metallurgical grade silicon (mSi), silicon dioxide (SiO2), aluminium dioxide (Al2O3) and titanium dioxide (TiO2) materials by close to an order of magnitude, thereby providing valuable clustering properties for each material. Each scattering curve presented a series of multiple structural levels, which are then quantified using the Unified power-law approach to provide valuable clustering characteristics such as the degree of aggregation, polydispersity and geometry standard deviation. Subsequently, a fully screen-printed field effect transistor that uses mSi as the active material is demonstrated. The transistor had an ON/OFF current-ratio of 104; an electron mobility of 0.7 cm2/V s; a leakage current in the order of 5 × 10-9 A, and no current saturation.
RESUMO
The presence of native oxide on the surface of silicon nanoparticles is known to inhibit charge transport on the surfaces. Scanning electron microscopy (SEM) studies reveal that the particles in the printed silicon network have a wide range of sizes and shapes. High-resolution transmission electron microscopy reveals that the particle surfaces have mainly the (111)- and (100)-oriented planes which stabilizes against further oxidation of the particles. X-ray absorption spectroscopy (XANES) and X-ray photoelectron spectroscopy (XPS) measurements at the O 1s-edge have been utilized to study the oxidation and local atomic structure of printed layers of silicon nanoparticles which were milled for different times. XANES results reveal the presence of the +4 (SiO2) oxidation state which tends towards the +2 (SiO) state for higher milling times. Si 2p XPS results indicate that the surfaces of the silicon nanoparticles in the printed layers are only partially oxidized and that all three sub-oxide, +1 (Si2O), +2 (SiO) and +3 (Si2O3), states are present. The analysis of the change in the sub-oxide peaks of the silicon nanoparticles shows the dominance of the +4 state only for lower milling times.
RESUMO
A new small-angle scattering technique in reflection geometry is described which enables a topological study of rough surfaces. This is achieved by using long-wavelength soft X-rays which are scattered at wide angles but in the low-Q range normally associated with small-angle scattering. The use of nanometre-wavelength radiation restricts the penetration to a thin surface layer which follows the topology of the surface, while moving the scattered beam to wider angles preventing shadowing by the surface features. The technique is, however, only applicable to rough surfaces for which there is no specular reflection, so that only the scattered beam was detected by the detector. As an example, a study of the surfaces of rough layers of silicon produced by the deposition of nanoparticles by blade-coating is presented. The surfaces of the blade-coated layers have rough features of the order of several micrometers. Using 2 nm and 13 nm X-rays scattered at angular ranges of 5° ≤ θ ≤ 51° and 5° ≤ θ ≤ 45°, respectively, a combined range of scattering vector of 0.00842 Å(-1) ≤ Q ≤ 0.4883 Å(-1) was obtained. Comparison with previous transmission SAXS and USAXS studies of the same materials indicates that the new method does probe the surface topology rather than the internal microstructure.
