RESUMO
We designed a grating coupler optimized for normal incidence and numerically demonstrate near-unity coupling in a standard 220-nm-thick silicon-on-insulator (SOI) technology. Our design breaks the vertical symmetry within the grating region by implementing three scattering sites per local period. This technique removes the need for bottom reflectors or additional material layers and can be realized using only two lithography masks. Using adjoint method-based optimization, we engineer the coupling spectrum of the grating, balancing the trade-off between peak efficiency and bandwidth. Using this technique, we simulate three devices with peak coupling efficiencies ranging between 93.4 (-0.3 dB) and 98.6% (-0.06 dB) with corresponding 1 dB bandwidths between 48 and 8 nm all centered around 1.55 µm.
RESUMO
We demonstrate a silicon-based electron accelerator that uses laser optical near fields to both accelerate and confine electrons over extended distances. Two dielectric laser accelerator (DLA) designs were tested, each consisting of two arrays of silicon pillars pumped symmetrically by pulse front tilted laser beams, designed for average acceleration gradients 35 and 50 MeV/m, respectively. The DLAs are designed to act as alternating phase focusing (APF) lattices, where electrons, depending on the electron-laser interaction phase, will alternate between opposing longitudinal and transverse focusing and defocusing forces. By incorporating fractional period drift sections that alter the synchronous phase between ±60° off crest, electrons captured in the designed acceleration bucket experience half the peak gradient as average gradient while also experiencing strong confinement forces that enable long interaction lengths. We demonstrate APF accelerators with interaction lengths up to 708 µm and energy gains up to 23.7±1.07 keV FWHM, a 25% increase from starting energy, demonstrating the ability to achieve substantial energy gains with subrelativistic DLA.
