Dynamically Reconfigurable on-Chip Polarimeters Based on Nanoantenna Enabled Polarization Dependent Optoelectronic Computing.

On-chip polarization detectors have attracted extensive research interest due to their filterless and ultracompact architecture. However, their polarization-dependent photoresponses cannot be dynamically adjusted, hindering the development toward intelligence. Here, we propose dynamically reconfigurable polarimetry based on in-sensor differentiation of two self-powered photoresponses with orthogonal polarization dependences and tunable responsivities. Such a device can be electrostatically configured in an ultrahigh polarization extinction ratio (PER) mode, where the PER tends to infinity, a Stokes parameter direct sensing mode, where the photoresponse is proportional to S1 or S2 with high accuracy (RMSES1 = 1.5%, RMSES2 = 2.0%), or a background suppressing mode, where the target-background polarization contrast is singularly enhanced. Moreover, the device achieves a polarization angle sensitivity of 0.51 mA·W-1·degree-1 and a specific polarization angle detectivity of 2.8 × 105 cm·Hz1/2·W·degree-1. This scheme is demonstrated throughout the near-to-long-wavelength infrared range, and it will bring a leap for next-generation on-chip polarimeters.

Configurable circular-polarization-dependent optoelectronic silent state for ultrahigh light ellipticity discrimination.

Filterless light-ellipticity-sensitive optoelectronic response generally has low discrimination, thus severely hindering the development of monolithic polarization detectors. Here, we achieve a breakthrough based on a configurable circular-polarization-dependent optoelectronic silent state created by the superposition of two photoresponses with enantiomerically opposite ellipticity dependences. The zero photocurrent and the significantly suppressed noise of the optoelectronic silent state singularly enhance the circular polarization extinction ratio (CPER) and the sensitivity to light ellipticity perturbation. The CPER of our device approaches infinity by the traditional definition. The newly established CPER taking noise into account is 3-4 orders of magnitude higher than those of ordinary integrated circular polarization detectors, and it remains high in an expanded wavelength range. The noise equivalent light ellipticity difference goes below 0.009° Hz-1/2 at modulation frequencies above 1000 Hz by a light power of 281 µW. This scheme brings a leap in developing monolithic ultracompact circular polarization detectors.

Phase-Controllable Growth of Air-Stable SnS Nanostructures for High-Performance Photodetectors with Ultralow Dark Current.

The epitaxial growth of low-dimensional tin chalcogenides SnX (X = S, Se) with a controlled crystal phase is of particular interest since it can be utilized to tune optoelectronic properties and exploit potential applications. However, it still remains a great challenge to synthesize SnX nanostructures with the same composition but different crystal phases and morphologies. Herein, we report a phase-controlled growth of SnS nanostructures via physical vapor deposition on mica substrates. The phase transition from α-SnS (Pbnm) nanosheets to ß-SnS (Cmcm) nanowires can be tailored by the reduction of growth temperature and precursor concentration, which originates from a delicate competition between SnS-mica interfacial coupling and phase cohesive energy. The phase transition from the α to ß phase not only greatly improves the ambient stability of SnS nanostructures but also leads to the band gap reduction from 1.03 to 0.93 eV, which is responsible for fabricated ß-SnS devices with an ultralow dark current of 21 pA at 1 V, an ultrafast response speed of ≤14 µs, and broadband spectra response from the visible to near-infrared range under ambient condition. A maximum detectivity of the ß-SnS photodetector arrives at 2.01 × 108 Jones, which is about 1 or 2 orders of magnitude larger than that of α-SnS devices. This work provides a new strategy for the phase-controlled growth of SnX nanomaterials for the development of highly stable and high-performance optoelectronic devices.

Photoresponse enhancement in a cavity-antenna-coupled graphene terahertz detector.

The unique and excellent optoelectronic properties of graphene make it a promising material for THz detection. However, the huge gap between the atomic thickness of graphene and the long wavelength of THz radiation severely limits the efficiency of light absorption and the photoresponse. Although optical antennas are commonly used to concentrate THz waves into deep subwavelength regions, a large amount of power is re-radiated out as waste rather than being absorbed by the active material. Here, we propose a cavity-antenna hybrid structure to enhance the THz absorption in a graphene flake through interference manipulation and impedance matching. The photoresponse of the device under an impedance-matched condition is 15 times higher than that under an impedance-mismatched condition. The cavity-antenna-coupled graphene THz detector exhibits a responsivity of 10.2 mA W-1 and a noise-equivalent power of 0.92 nW Hz-0.5. The excellent performance of our device makes it one of the best room temperature sub-THz graphene detectors that we investigated. A theoretical model was established to analyze the interaction between the antenna-coupled graphene and the cavity structure. With a combination of both electrostatic doping and interference manipulation, the light coupling management by impedance matching can enhance the absorptance of graphene by more than two orders of magnitude. This work experimentally and theoretically revealed that the cavity-antenna hybrid structure can prominently enhance the responsivity of a tiny piece of graphene in the sub-THz regime. Meanwhile, this strategy can also be applied to enhance the absorptance of other low-dimensional or bulk materials.

Combined role of polarization matching and critical coupling in enhanced absorption of 2D materials based on metamaterials.

Since 2D materials are typically much more efficient to absorb in-plane polarized light than out-of-plane polarized light, keeping the light polarization in-plane at the 2D material is revealed to be a crucial factor other than critical coupling in light absorption enhancement in a 2D material integrated with a light coupling structure. When the composite of a metal-insulator-metal structure and a 2D material changes from the magnetic resonator form to the metasurface Salisbury screen one, the field polarization at the 2D material changes from a mainly out-of-plane status to a mainly in-plane status. As a result, for graphene, the absorptance enhancement is increased by 1.6 to 4.2 times, the bandwidth enlarged by 3.6 to 6.4 times, and the metal loss suppressed by 7.4 to 24 times in the mid- to far-infrared range, leading to the absorptance of graphene approaching 90% in the mid-infrared regime and 100% in the THz regime. For monolayer black phosphorus, the absorptance enhancement at the wavelength of 3.5 µm is increased by 5.4 times, and the bandwidth enlarged by 1.8 times. For monolayer MoS2, the averaged absorptance in the visible-near infrared range is enhanced by 4.4 times from 15.5% to 68.1%.

Highly polarization-sensitive far infrared detector based on an optical antenna integrated aligned carbon nanotube film.

Polarization detection is another important way to characterize a light field in addition to intensity and spectrum. This is required for high-fidelity information acquisition and high precision target recognition in the infrared detection region. Single-wall carbon nanotube (SWCNT) films have been investigated for infrared detection with considerable sensitivity at room temperature based on the photothermoelectric effect. In this work, a bowtie antenna integrated aligned SWCNT film is proposed for highly polarization sensitive, far infrared detection. The SWCNT film is shaped into a belt and doped with diverse agents to form a p-n junction at the center. The SWCNTs are arranged perpendicular to the electronic transportation direction. The antenna is aligned at the junction and along the SWCNTs. Based on the following four factors: (1) deep-subwavelength light concentration at the junction, (2) alignment between the SWCNTs and the antenna, (3) anisotropic heat transfer in the aligned SWCNT film, and (4) light field reduction within the gap of the bowtie antenna for the polarization perpendicular to the antenna axis, the ratio between the responsivities for the polarizations parallel and perpendicular to the SWCNTs could be higher than 13 600. By changing the size of the antenna, the resonant frequency could be tuned. Over the range from 0.5 to 1.5 THz, the peak polarization extinction ratios at different resonant frequencies are all bigger than 700, and they are 16 to 320 times higher than that of the aligned SWCNT belt without the antenna. Moreover, the integration of the antenna and the aligned SWCNT belt also enhances the responsivity by 1 to 2 orders of magnitude. Compared to an aligned multi-wall carbon nanotube (MWCNT) film, an aligned SWCNT film integrated with an optical antenna is more favorable for highly polarization sensitive, far infrared detection. The result is based on the numerical simulations of the light and the thermal fields.