Counterpropagating topological and quantum Hall edge channels.

The survival of the quantum spin Hall edge channels in presence of an external magnetic field has been a subject of experimental and theoretical research. The inversion of Landau levels that accommodates the quantum spin Hall effect is destroyed at a critical magnetic field, and a trivial insulating gap appears in the spectrum for stronger fields. In this work, we report the absence of this transport gap in disordered two dimensional topological insulators in perpendicular magnetic fields of up to 16 T. Instead, we observe that a topological edge channel (from band inversion) coexists with a counterpropagating quantum Hall edge channel for magnetic fields at which the transition to the insulating regime is expected. For larger fields, we observe only the quantum Hall edge channel with transverse resistance close to h/e2. By tuning the disorder using different fabrication processes, we find evidence that this unexpected ν = 1 plateau originates from extended quantum Hall edge channels along a continuous network of charge puddles at the edges of the device.

Emergent quantum Hall effects below 50 mT in a two-dimensional topological insulator.

The realization of the quantum spin Hall effect in HgTe quantum wells has led to the development of topological materials, which, in combination with magnetism and superconductivity, are predicted to host chiral Majorana fermions. However, the large magnetization in conventional quantum anomalous Hall systems makes it challenging to induce superconductivity. Here, we report two different emergent quantum Hall effects in (Hg,Mn)Te quantum wells. First, a previously unidentified quantum Hall state emerges from the quantum spin Hall state at an exceptionally low magnetic field of ~50 mT. Second, tuning toward the bulk p-regime, we resolve quantum Hall plateaus at fields as low as 20 to 30 mT, where transport is dominated by a van Hove singularity in the valence band. These emergent quantum Hall phenomena rely critically on the topological band structure of HgTe, and their occurrence at very low fields makes them an ideal candidate for realizing chiral Majorana fermions.

High Mobility HgTe Microstructures for Quantum Spin Hall Studies.

The topic of two-dimensional topological insulators has blossomed after the first observation of the quantum spin Hall (QSH) effect in HgTe quantum wells. However, studies have been hindered by the relative fragility of the edge states. Their stability has been a subject of both theoretical and experimental investigation in the past decade. Here, we present a new generation of high quality (Cd,Hg)Te/HgTe-structures based on a new chemical etching method. From magnetotransport measurements on macro- and microscopic Hall bars, we extract electron mobilities µ up to about 400 × 103 cm2/(V s), and the mean free path λmfp becomes comparable to the sample dimensions. The Hall bars show quantized spin Hall conductance, which is remarkably stable up to 15 K. The clean and robust edge states allow us to fabricate high quality side-contacted Josephson junctions, which are significant in the context of topological superconductivity. Our results open up new avenues for fundamental research on QSH effect as well as potential applications in spintronics and topological quantum computation.