RESUMO
A CO(2) laser system with flexible parameters was developed for fundamental research related to an extreme ultraviolet (EUV) lithography source. The laser is a master oscillator and power amplifier (MOPA) system, consisting of a master oscillator, an externally triggered plasma switch, a preamplifier, a main amplifier, and electronic synchronization units. The laser pulse duration can be varied easily from 10 to 110 ns, with a constant peak power for pulse durations from 25 to 110 ns. The MOPA laser system can also be operated in dual-oscillator mode to produce laser pulse with pulse duration as long as 200 ns and a train of laser pulses with flexible interval. The divergence of the laser beam is 1.3 times the diffraction limit. The laser intensity on the target surface can be up to 8x10(10) W/cm(2). Utilizing this CO(2) MOPA laser system, high conversion efficiency from laser to in-band (2% bandwidth) 13.5 nm EUV emission has been demonstrated over a wide range of laser pulse durations.
RESUMO
A thin Sn film was investigated as a mass-limited target for an extreme ultraviolet (EUV) lithography source. It was found that those energetic ions that are intrinsic with the mass-limited Sn target could be efficiently mitigated by introducing a low-energy prepulse. High in-band conversion efficiency from a laser to 13.5 nm EUV light could be obtained using an Sn film with a thickness down to 30 nm when irradiated by dual laser pulses. It was shown that the combination of dual pulse and inert Ar gas could fully mitigate ions with a low ambient pressure nearly without the penalty of the absorption of the EUV light.
