Side-gated, enhancement mode, InAs nanowire double quantum dot devices-toward controlling transverse electric fields in spin-transport measurements.

A double quantum dot system with a definitive transverse electric field in the plane of the sample is defined by combining a facile side-gating technique with enhancement mode InAs nanowires. Positive bias on the plunger gates enhance quantum dot segments along the nanowire, negative bias on barrier gates deplete regions, and situating gates biased at opposite polarities on opposing sides of the nanowire allows an electric field to be engineered. With sufficiently biased barrier regions stable bias triangle features are observed in the weak interdot coupling regime. The singlet-triplet energy splitting Δ ST in Pauli spin-blockaded features is studied as a function of an external magnetic field applied perpendicular to the sample plane. We interpret an apparent absence of mixing between singlet and triplet states as an indication that the spin-orbit field is oriented out of the sample plane due to the induced electric field. Finally, we discuss the potential of combining advanced gating architectures with enhancement mode nanowires to control the orientation of the spin-orbit field-a prospect that could enable multiple, nanowire-based spin-qubits to be operated on a single chip with a fixed-angle external magnetic field applied.

Achieving short high-quality gate-all-around structures for horizontal nanowire field-effect transistors.

We introduce a fabrication method for gate-all-around nanowire field-effect transistors. Single nanowires were aligned perpendicular to underlying bottom gates using a resist-trench alignment technique. Top gates were then defined aligned to the bottom gates to form gate-all-around structures. This approach overcomes significant limitations in minimal obtainable gate length and gate-length control in previous horizontal wrap-gated nanowire transistors that arise because the gate is defined by wet-etching. In the method presented here gate-length control is limited by the resolution of the electron-beam-lithography process. We demonstrate the versatility of our approach by fabricating a device with an independent bottom gate, top gate, and gate-all-around structure as well as a device with three independent gate-all-around structures with 300, 200, and 150 nm gate length. Our method enables us to achieve subthreshold swings as low as 38 mV dec-1 at 77 K for a 150 nm gate length.

Hybrid Nanowire Ion-to-Electron Transducers for Integrated Bioelectronic Circuitry.

A key task in the emerging field of bioelectronics is the transduction between ionic/protonic and electronic signals at high fidelity. This is a considerable challenge since the two carrier types exhibit intrinsically different physics and are best supported by very different materials types-electronic signals in inorganic semiconductors and ionic/protonic signals in organic or bio-organic polymers, gels, or electrolytes. Here we demonstrate a new class of organic-inorganic transducing interface featuring semiconducting nanowires electrostatically gated using a solid proton-transporting hygroscopic polymer. This model platform allows us to study the basic transducing mechanisms as well as deliver high fidelity signal conversion by tapping into and drawing together the best candidates from traditionally disparate realms of electronic materials research. By combining complementary n- and p-type transducers we demonstrate functional logic with significant potential for scaling toward high-density integrated bioelectronic circuitry.

InAs Nanowire Transistors with Multiple, Independent Wrap-Gate Segments.

We report a method for making horizontal wrap-gate nanowire transistors with up to four independently controllable wrap-gated segments. While the step up to two independent wrap-gates requires a major change in fabrication methodology, a key advantage to this new approach, and the horizontal orientation more generally, is that achieving more than two wrap-gate segments then requires no extra fabrication steps. This is in contrast to the vertical orientation, where a significant subset of the fabrication steps needs to be repeated for each additional gate. We show that cross-talk between adjacent wrap-gate segments is negligible despite separations less than 200 nm. We also demonstrate the ability to make multiple wrap-gate transistors on a single nanowire using the exact same process. The excellent scalability potential of horizontal wrap-gate nanowire transistors makes them highly favorable for the development of advanced nanowire devices and possible integration with vertical wrap-gate nanowire transistors in 3D nanowire network architectures.

The effect of (NH4)2Sx passivation on the (311)A GaAs surface and its use in AlGaAs/GaAs heterostructure devices.

We have studied the efficacy of (NH4)2Sx surface passivation on the (311)A GaAs surface. We report XPS studies of simultaneously-grown (311)A and (100) heterostructures showing that the (NH4)2Sx solution removes surface oxide and sulfidizes both surfaces. Passivation is often characterized using photoluminescence measurements; we show that while (NH4)2Sx treatment gives a 40-60 ×  increase in photoluminescence intensity for the (100) surface, an increase of only 2-3 ×  is obtained for the (311)A surface. A corresponding lack of reproducible improvement in the gate hysteresis of (311)A heterostructure transistor devices made with the passivation treatment performed immediately prior to gate deposition is also found. We discuss possible reasons why sulfur passivation is ineffective for (311)A GaAs, and propose alternative strategies for passivation of this surface.

Impact of small-angle scattering on ballistic transport in quantum dots.

Disorder increasingly affects performance as electronic devices are reduced in size. The ionized dopants used to populate a device with electrons are particularly problematic, leading to unpredictable changes in the behavior of devices such as quantum dots each time they are cooled for use. We show that a quantum dot can be used as a highly sensitive probe of changes in disorder potential and that, by removing the ionized dopants and populating the dot electrostatically, its electronic properties become reproducible with high fidelity after thermal cycling to room temperature. Our work demonstrates that the disorder potential has a significant, perhaps even dominant, influence on the electron dynamics, with important implications for "ballistic" transport in quantum dots.

Open quantum dots: II. Probing the classical to quantum transition.

Open quantum dots provide a natural system in which to study both classical and quantum features of transport. From the classical point of view these dots possess a mixed phase space which yields families of closed, regular orbits as well as an expansive sea of chaos. An important question concerns the manner in which these classical states evolve into the set of quantum states that populate the dot in the quantum limit. In the reverse direction, the manner in which the quantum states evolve to the classical world is governed strongly by Zurek's decoherence theory. This was discussed from the quantum perspective in an earlier review (Ferry et al 2011 Semicond. Sci. Technol. 26 043001). Here, we discuss the nature of the various classical states, how they are formed, how they progress to the quantum world, and the signatures that they create in magnetotransport and general conductance studies of these dots.

Extreme sensitivity of the spin-splitting and 0.7 anomaly to confining potential in one-dimensional nanoelectronic devices.

Quantum point contacts (QPCs) have shown promise as nanoscale spin-selective components for spintronic applications and are of fundamental interest in the study of electron many-body effects such as the 0.7 × 2e(2)/h anomaly. We report on the dependence of the 1D Landé g-factor g and 0.7 anomaly on electron density and confinement in QPCs with two different top-gate architectures. We obtain g values up to 2.8 for the lowest 1D subband, significantly exceeding previous in-plane g-factor values in AlGaAs/GaAs QPCs and approaching that in InGaAs/InP QPCs. We show that g is highly sensitive to confinement potential, particularly for the lowest 1D subband. This suggests careful management of the QPC's confinement potential may enable the high g desirable for spintronic applications without resorting to narrow-gap materials such as InAs or InSb. The 0.7 anomaly and zero-bias peak are also highly sensitive to confining potential, explaining the conflicting density dependencies of the 0.7 anomaly in the literature.

Direct imaging of electron states in open quantum dots.

We use scanning gate microscopy to probe the ballistic motion of electrons within an open GaAs/AlGaAs quantum dot. Conductance maps are recorded by scanning a biased tip over the open quantum dot while a magnetic field is applied. We show that, for specific magnetic fields, the measured conductance images resemble the classical transmitted and backscattered trajectories and their quantum mechanical analogue. In addition, we prove experimentally, with this direct measurement technique, the existence of pointer states. The demonstrated direct imaging technique is essential for the fundamental understanding of wave function scarring and quantum decoherence theory.

Resistively detected nuclear magnetic resonance in n- and p-type GaAs quantum point contacts.

We present resistively detected NMR measurements in induced and modulation-doped electron quantum point contacts, as well as induced hole quantum point contacts. While the magnitude of the resistance change and associated NMR peaks in n-type devices is in line with other recent measurements using this technique, the effect in p-type devices is too small to measure. This suggests that the hyperfine coupling between holes and nuclei in this type of device is much smaller than the electron hyperfine coupling, which could have implications in quantum information processing.

Periodic scarred States in open quantum dots as evidence of quantum Darwinism.

Scanning gate microscopy (SGM) is used to image scar structures in an open quantum dot, which is created in an InAs quantum well by electron-beam lithography and wet etching. The scanned images demonstrate periodicities in magnetic field that correlate to those found in the conductance fluctuations. Simulations have shown that these magnetic transform images bear a strong resemblance to actual scars found in the dot that replicate through the modes in direct agreement with quantum Darwinism.

Characterization of aluminium-based water treatment residual for potential phosphorus removal in engineered wetlands.

Aluminium-based water treatment residual (Al-WTR) is the most widely generated residual from water treatment facilities worldwide. It is regarded as a by-product of no reuse potential and landfilled. This study assessed Al-WTR as potential phosphate-removing substrate in engineered wetlands. Results indicate specific surface area ranged from 28.0 m(2) g(-1) to 41.4 m(2) g(-1). X-ray Diffraction, Fourier transform infrared and energy-dispersive X-ray spectroscopes all indicate Al-WTR is mainly composed of amorphous aluminium which influences its phosphorus (P) adsorption capacity. The pH and electrical conductivity ranged from 5.9 to 6.0 and 0.104 dS m(-1) to 0.140 dS m(-1) respectively, showing that it should support plant growth. Batch tests showed adsorption maxima of 31.9 mg P g(-1) and significant P removal was achieved in column tests. Overall, results showed that Al-WTR can be used for P removal in engineered wetlands and it carries the benefits of reuse of a by-product that promotes sustainability.

Imaging scarred states in quantum dots.

We have used the scanning gate microscopy technique to image scar structures in an open quantum dot, fabricated in an InAs quantum well and defined by electron beam lithography. These are shown to have a periodicity in magnetic field that correlates with that found in the conductance fluctuations. Simulations have shown that these magnetic transform images bear a strong resemblance to actual scars found in the dots.

Estrogen replacement attenuates effects of scopolamine and lorazepam on memory acquisition and retention.

A multiple-trial passive avoidance paradigm was used to examine and compare the ability for estrogen replacement to attenuate learning and memory deficits produced by the muscarinic antagonist scopolamine and the benzodiazepine lorazepam. The multiple-trial paradigm was used in order to distinguish effects on acquisition from effects on retention. Estrogen replacement significantly attenuated a scopolamine-induced deficit on passive avoidance acquisition, but not retention. The ability for estrogen to attenuate the effect of scopolamine on acquisition was observed only when the analysis was limited to animals with serum levels of estradiol <200 pg/ml, suggesting that higher levels of estradiol were ineffective. This observation is consistent with at least one recent study showing dose-related effects of estrogen on ChAT-like immunoreactivity in the basal forebrain and supports the hypothesis that effects of estrogen on basal forebrain cholinergic neurons can help to reduce cognitive deficits associated with cholinergic impairment. Estrogen replacement was also observed to protect against a lorazepam-induced impairment on passive avoidance retention. This effect was observed specifically in animals that received estrogen prior to and during training and was not due to any effect of estrogen on serum levels of lorazepam following acute lorazepam administration. Collectively, these data demonstrate the ability for estrogen replacement to attenuate specific pharmacologically induced impairments in learning and retention and provide additional clues as to potential mechanisms by which estrogen replacement may help to reduce cognitive deficits associated with aging and Alzheimer's disease in postmenopausal women.

Enhanced plasma DHEAS, brain acetylcholine and memory mediated by steroid sulfatase inhibition.

Steroid sulfatase inhibitors can alter the metabolism of neurosteroids which modulate brain function. Administration of the non-steroidal steroid sulfatase inhibitor (p-O-sulfamoyl)-N-tetradecanoyl tyramine (DU-14) to rats for 15 days increased plasma dehydroepiandrosterone sulfate (DHEAS) concentrations by 88.2%, decreased plasma dehydroepiandrosterone (DHEA) concentrations by 84.6%, increased hippocampal acetylcholine (ACh) release determined via in vivo microdialysis by almost 3-fold, and produced a significant blockade of scopolamine-induced amnesia as measured by a passive avoidance test. These results suggest DHEAS rather than DHEA enhances brain cholinergic function and that steroid sulfatase inhibition may become an important tool for enhancing neuronal functions, such as memory, mediated by excitatory neurosteroids.

Memory enhancement mediated by the steroid sulfatase inhibitor (p-O-sulfamoyl)-N-tetradecanoyl tyramine.

The intent of this study was to determine whether altering the metabolism of neurosteroids via blockade of the enzyme, steroid sulfatase, could enhance memory retention in rats. The steroid sulfatase inhibitor p-O-(sulfamoyl)-N-tetradecanoyl tyramine (DU-14) was administered alone and in combination with the neurosteroid dehydroepiandrosterone sulfate (DHEAS) to rats which were then tested for the reversal of scopolamine-induced amnesia. A single 30 mg/kg IP dose of DU-14 produced a significant inhibition of steroid sulfatase activity in both brain (14.8%), and liver (85.2%) tissues, 24 hours following administration. In a passive avoidance test, DU-14 enhanced the reversal of amnesia by DHEAS. These results suggest that steroid sulfatase inhibition can potentiate the memory enhancing properties of DHEAS.

Non-neoplastic pineal cysts.

We identified 53 patients with non-neoplastic cysts of the pineal gland. In contrast to patients with pineal neoplasms, pineal cysts are usually asymptomatic. They infrequently obstruct the aqueduct to cause hydrocephalus or compress the tectum to produce the neuro-ophthalmologic signs of dorsal midbrain dysfunction. Obstructive hydrocephalus was present in only five patients (9.4%); three of them showed clinical signs of Parinaud's syndrome. CT and MRI typically reveal a cystic mass that averages 1.6 cm in anteroposterior (A-P) diameter with calcification at the periphery and faint rim-like contrast enhancement. Sagittal MRI is the most useful diagnostic test because it shows the anatomic relationship of the cyst to the aqueduct. The mass may compress the tectum and distort the proximal aqueduct; occasionally a large cyst may occlude the aqueduct. All patients with obstructive hydrocephalus had cysts greater than 2.0 cm in A-P diameter. Nine patients had suboccipital craniotomy. In all of them, the cysts contained clear fluid and were easily removed. We advocate conservative management with clinical observation of these benign lesions that may be developmental variants of normal pineal gland.

Sedation for paediatric computerized tomography--a double-blind assessment of rectal midazolam.

This double-blind study investigated the rectal administration of midazolam as an alternative to general anaesthesia for elective computerized tomography (CT) of the brain. Thirty children were randomly allocated to receive either midazolam 0.3 mg kg-1 (Group 1) or midazolam 0.6 mg kg-1 (Group 2) by the rectal route. Sedation was obtained in 13 children in Group 1 and 12 in Group 2 but this was only satisfactory for scanning in seven children in Group 1 and eight in Group 2. We concluded that although the technique produced sedation, it did not reliably produce satisfactory conditions for CT scanning.