Impact of Lu-Substitution in Yb14-xLuxZnSb11: Thermoelectric Properties and Oxidation Studies.

Yb14ZnSb11 is one of the newest additions to the high-performance Yb14MSb11 (M = Mn, Mg, and Zn) family of p-type high-temperature thermoelectric materials and shows promise for forming passivating oxide coatings. Work on the oxidation of rare earth (RE)-substituted Yb14-xRExMnSb11 single crystals suggested that substituting late RE elements may form more stable passivation oxide coatings. Yb14-xLuxZnSb11 (x = 0.1, 0.2, 0.3, 0.4, 0.5, and 0.7) samples were synthesized, and Lu-substitution's effects on thermoelectric and oxidation properties are investigated. The solubility of Lu within the system was found to be quite low with xmax ∼ 0.3; samples with x > 0.3 contained impurities of LuSb. Goldsmid-Sharp band gap estimations show that introducing Lu reduces the apparent band gap. Because of this, the Lu-substituted samples show a reduction in the maximum Seebeck coefficient, decreasing the high-temperature zT. This contrasts with the impact of Lu3+ substitution in Yb14MnSb11, where the addition of Lu3+ for Yb2+ results in increases in both resistivity and the Seebeck coefficient. Oxidation of the x = 0.3 solid solution was studied by thermogravimetric- differential scanning calorimetry , powder X-ray diffraction, scanning electron microscopy-energy-dispersive spectroscopy, and optical images. The samples show no mass gain before 785 K, and ensuing oxidation reactions are proposed. At the highest temperatures, significant amounts of Yb14-xLuxZnSb11 remained beneath an oxide coating, suggesting that passivation may be achievable in oxygen environments.

Unlocking the thermoelectric potential of the Ca14AlSb11 structure type.

Yb14MnSb11 and Yb14MgSb11 are among the best p-type high-temperature (>1200 K) thermoelectric materials, yet other compounds of this Ca14AlSb11 structure type have not matched their stability and efficiency. First-principles computations show that the features in the electronic structures that have been identified to lead to high thermoelectric performances are present in Yb14ZnSb11, which has been presumed to be a poor thermoelectric material. We show that the previously reported low power factor of Yb14ZnSb11 is not intrinsic and is due to the presence of a Yb9Zn4+xSb9 impurity uniquely present in the Zn system. Phase-pure Yb14ZnSb11 synthesized through a route avoiding the impurity formation reveals its exceptional high-temperature thermoelectric properties, reaching a peak zT of 1.2 at 1175 K. Beyond Yb14ZnSb11, the favorable band structure features for thermoelectric performance are universal among the Ca14AlSb11 structure type, opening the possibility for high-performance thermoelectric materials.

Y2Te3: A New n-Type Thermoelectric Material.

Rare-earth chalcogenides Re3-xCh4 (Re = La, Pr, Nd, Ch = S, Se, and Te) have been extensively studied as high-temperature thermoelectric (TE) materials owing to their low lattice thermal conductivity (κL) and tunable electron carrier concentration via cation vacancies. In this work, we introduce Y2Te3, a rare-earth chalcogenide with a rocksalt-like vacancy-ordered structure, as a promising n-type TE material. We computationally evaluate the transport properties, optimized TE performance, and doping characteristics of Y2Te3. Combined with a low κL, multiple low-lying conduction band valleys yield a high n-type TE quality factor. We find that a maximum figure of merit zT > 1 can be achieved when Y2Te3 is optimally doped to an electron concentration of 1-2 × 1020 cm-3. We use defect calculations to show that Y2Te3 is n-type dopable under Y-rich growth conditions, which suppress the formation of acceptor-like cation vacancies. Furthermore, we propose that optimal n-type doping can be achieved with halogens (Cl, Br, and I), with I being the most effective dopant. Our computational results as well as experimental results reported elsewhere motivate further optimization of Y2Te3 as an n-type TE material.

Discovery of multivalley Fermi surface responsible for the high thermoelectric performance in Yb14MnSb11 and Yb14MgSb11.

The Zintl phases, Yb14 MSb11 (M = Mn, Mg, Al, Zn), are now some of the highest thermoelectric efficiency p-type materials with stability above 873 K. Yb14MnSb11 gained prominence as the first p-type thermoelectric material to double the efficiency of SiGe alloy, the heritage material in radioisotope thermoelectric generators used to power NASA's deep space exploration. This study investigates the solid solution of Yb14Mg1-x Al x Sb11 (0 ≤ x ≤ 1), which enables a full mapping of the metal-to-semiconductor transition. Using a combined theoretical and experimental approach, we show that a second, high valley degeneracy (N v = 8) band is responsible for the groundbreaking performance of Yb14 MSb11 This multiband understanding of the properties provides insight into other thermoelectric systems (La3-x Te4, SnTe, Ag9AlSe6, and Eu9CdSb9), and the model predicts that an increase in carrier concentration can lead to zT > 1.5 in Yb14 MSb11 systems.

Thermoelectric Properties of Scandium Sesquitelluride.

Rare-earth (RE) tellurides have been studied extensively for use in high-temperature thermoelectric applications. Specifically, lanthanum and praseodymium-based compounds with the Th3P4 structure type have demonstrated dimensionless thermoelectric figures of merit (zT) up to 1.7 at 1200 K. Scandium, while not part of the lanthanide series, is considered a RE element due to its chemical similarity. However, little is known about the thermoelectric properties of the tellurides of scandium. Here, we synthesized scandium sesquitelluride (Sc2Te3) using a mechanochemical approach and formed sintered compacts through spark plasma sintering (SPS). Temperature-dependent thermoelectric properties were measured from 300⁻1100 K. Sc2Te3 exhibited a peak zT = 0.3 over the broad range of 500⁻750 K due to an appreciable power factor and low-lattice thermal conductivity in the mid-temperature range.

Seebeck and Figure of Merit Enhancement by Rare Earth Doping in Yb14-xRExZnSb11 (x = 0.5).

Yb14ZnSb11 has been of interest for its intermediate valency and possible Kondo designation. It is one of the few transition metal compounds of the Ca14AlSb11 structure type that show metallic behavior. While the solid solution of Yb14Mn1-xZnxSb11 shows an improvement in the high temperature figure of merit of about 10% over Yb14MnSb11, there has been no investigation of optimization of the Zn containing phase. In an effort to expand the possible high temperature p-type thermoelectric materials with this structure type, the rare earth (RE) containing solid solution Yb14-xRExZnSb11 (RE = Y, La) was investigated. The substitution of a small amount of 3+ rare earth (RE) for Yb2+ was employed as a means of optimizing Yb14MnSb11 for use as a thermoelectric material. Yb14ZnSb11 is considered an intermediate valence Kondo system where some percentage of the Yb is formally 3+ and undergoes a reduction to 2+ at ~85 K. The substitution of a 3+ RE element could either replace the Yb3+ or add to the total amount of 3+ RE and provides changes to the electronic states. RE = Y, La were chosen as they represent the two extremes in size as substitutions for Yb: a similar and much larger size RE, respectively, compared with Yb3+. The composition x = 0.5 was chosen as that is the typical amount of RE element that can be substituted into Yb14MnSb11. These two new RE containing compositions show a significant improvement in Seebeck while decreasing thermal conductivity. The addition of RE increases the melting point of Yb14ZnSb11 so that the transport data from 300 K to 1275 K can be collected. The figure of merit is increased five times over that of Yb14ZnSb11 and provides a zT ~0.7 at 1275 K.

Synthesis and characterization of vacancy-doped neodymium telluride for thermoelectric applications.

Thermoelectric materials exhibit a voltage under an applied thermal gradient and are the heart of radioisotope thermoelectric generators (RTGs), which are the main power system for space missions such as Voyager I, Voyager II, and the Mars Curiosity rover. However, materials currently in use enable only modest thermal-to-electrical conversion efficiencies near 6.5% at the system level, warranting the development of material systems with improved thermoelectric performance. Previous work has demonstrated large thermoelectric figures of merit for lanthanum telluride (La3-x Te4), a high-temperature n-type material, achieving a peak zT value of 1.1 at 1275 K at an optimum cation vacancy concentration. Here we present an investigation of the thermoelectric properties of neodymium telluride (Nd3-x Te4), another rare-earth telluride with a similar structure to La3-x Te4. Density functional theory (DFT) calculations predicted a significant increase in the Seebeck coefficient over La3-x Te4 at equivalent vacancy concentrations due to an increased density of states (DOS) near the Fermi level from the 4f electrons of Nd. The high temperature electrical resistivity, Seebeck coefficient, and thermal conductivity were measured for Nd3-x Te4 at various carrier concentrations. These measurements were compared to La3-x Te4 in order to elucidate the impact of the four 4f electrons of Nd on the transport properties of Nd3-x Te4. A zT of 1.2 was achieved at 1273 K for Nd2.78Te4, which is a 10% improvement over that of La2.74Te4.

Mechanochemical Synthesis and High Temperature Thermoelectric Properties of Calcium-Doped Lanthanum Telluride La3-xCaxTe4.

The thermoelectric properties from 300 - 1275 K of calcium-doped La3-xTe4 are reported. La3-xTe4 is a high temperature n-type thermoelectric material with a previously reported zTmax ~ 1.1 at 1273 K and x = 0.23. Computational modeling suggests the La atoms define the density of states of the conduction band for La3-xTe4. Doping with Ca2+ on the La3+ site is explored as a means of modifying the density of states to improve the power factor and to achieve a finer control over the carrier concentration. High purity, oxide-free samples are produced by ball milling of the elements and consolidation by spark plasma sintering. Calcium substitution upon the lanthanum site was confirmed by a combination of Rietveld refinements of powder X-ray diffraction data and wave dispersive spectroscopy. A zTmax ~ 1.2 is reached at 1273 K for the composition La2.2Ca0.78Te4 and the relative increase compared to La3-xTe4 is attributed to the finer carrier concentration.

Nanostructured materials for thermoelectric applications.

Recent studies indicate that nanostructuring can be an effective method for increasing the dimensionless thermoelectric figure of merit (ZT) in materials. Most of the enhancement in ZT can be attributed to large reductions in the lattice thermal conductivity due to increased phonon scattering at interfaces. Although significant gains have been reported, much higher ZTs in practical, cost-effective and environmentally benign materials are needed in order for thermoelectrics to become effective for large-scale, wide-spread power and thermal management applications. This review discusses the various synthetic techniques that can be used in the production of bulk scale nanostructured materials. The advantages and disadvantages of each synthetic method are evaluated along with guidelines and goals presented for an ideal thermoelectric material. With proper optimization, some of these techniques hold promise for producing high efficiency devices.