RESUMO
We show that adapting the knowledge developed for the disordered Mott-Hubbard model to nanoparticle (NP) solids can deliver many very helpful new insights. We developed a hierarchical nanoparticle transport simulator (HINTS), which builds from localized states to describe the disorder-localized and Mott-localized phases of NP solids and the transitions out of these localized phases. We also studied the interplay between correlations and disorder in the corresponding multiorbital Hubbard model at and away from integer filling by dynamical mean field theory. This DMFT approach is complementary to HINTS, as it builds from the metallic phase of the NP solid. The mobility scenarios produced by the two methods are strikingly similar and account for the mobilities measured in NP solids. We conclude this work by constructing the comprehensive phase diagram of PbSe NP solids on the disorder-filling plane.
RESUMO
Resistive switching can be achieved in a Mott insulator by applying current/voltage, which triggers an insulator-metal transition (IMT). This phenomenon is key for understanding IMT physics and developing novel memory elements and brain-inspired technology. Despite this, the roles of electric field and Joule heating in the switching process remain controversial. Using nanowires of two archetypal Mott insulators-VO2 and V2O3 we unequivocally show that a purely non-thermal electrical IMT can occur in both materials. The mechanism behind this effect is identified as field-assisted carrier generation leading to a doping driven IMT. This effect can be controlled by similar means in both VO2 and V2O3, suggesting that the proposed mechanism is generally applicable to Mott insulators. The energy consumption associated with the non-thermal IMT is extremely low, rivaling that of state-of-the-art electronics and biological neurons. These findings pave the way towards highly energy-efficient applications of Mott insulators.
RESUMO
Time-reversal-invariant topological superconducting (TRITOPS) wires are known to host a fractional spin â/4 at their ends. We investigate how this fractional spin affects the Josephson current in a TRITOPS-quantum dot-TRITOPS Josephson junction, describing the wire in a model that can be tuned between a topological and a nontopological phase. We compute the equilibrium Josephson current of the full model by continuous-time Monte Carlo simulations and interpret the results within an effective low-energy theory. We show that in the topological phase, the 0-to-π transition is quenched via formation of a spin singlet from the quantum-dot spin and the fractional spins associated with the two adjacent topological superconductors.
RESUMO
We study the transport behavior induced by a small bias voltage through a quantum dot connected to one-channel finite-size wires. We describe the quantum dot using the Hubbard-Anderson impurity model and we obtain solutions by means of a quantum Monte Carlo method. We investigate the effect of a magnetic field applied at the quantum dot in the Kondo regime. We identify mesoscopic oscillations in the conductance, which are introduced by the magnetic field. This behavior is analogous to that observed as a function of the temperature.
RESUMO
We solve for the SU(N) Heisenberg spin glass in the limit of large N focusing on small S and T. We study the effect of quantum and thermal fluctuations in the frequency dependent response function and observe interesting transfers of spectral weight. We compute the T dependence of the order parameter and the specific heat and find an unusual T2 behavior for the latter at low temperatures in the spin-glass phase. We find remarkable qualitative agreement with various experiments on the quantum frustrated magnet SrCr(9p)Ga(12-9p)O19.
