Surface-engineered Mo2B: a promising electrode material for constructing Ohmic contacts with blue phosphorene for electronic device applications.

The Schottky barrier between a metal and a semiconductor plays an important role in determining the transport efficiency of carriers and improving the performance of devices. In this work, we systematically studied the structure and electronic properties of heterostructures of blue phosphorene (BP) in contact with Mo2B based on density functional theory. The semiconductor properties of BP are destroyed owing to strong interaction with bare Mo2B. The effect of modifying Mo2B with O and OH on the contact properties was investigated. A p-type Schottky contact can be obtained in BP/Mo2BO2. The height of the Schottky barrier can be modulated by interlayer distance to realize a transition from a p-type Schottky contact to a p-type Ohmic contact in BP/Mo2BO2. The BP/Mo2B(OH)2 forms robust Ohmic contacts, which are insensitive to interlayer distance and external electric fields due to the Fermi level pinning effect. Our work provides important clues for contact engineering and improvement of device performance based on BP.

Strong mechanical anisotropy and an anisotropic Dirac state in 2D C5N3.

Two-dimensional (2D) carbon nitride materials have emerged as a versatile platform for the design of high-performance nanoelectronics, but strong anisotropy in 2D carbon nitrides has rarely been reported. In this work, a 2D carbon nitride with strong anisotropy composed of tetra-, penta-, and hexa-rings (named as TPH-C5N3) is proposed. This TPH-C5N3 exhibits both dynamical and mechanical stability. Furthermore, it also showcases remarkable thermal stability, reaching up to 2300 K, as evidenced by AIMD simulations conducted in an NVT environment utilizing the Nosé-Hoover thermostat. Significantly, TPH-C5N3 demonstrates high anisotropic ratios in its mechanical properties, positioning it as the frontrunner in the current carbon nitride systems. In addition, a Dirac cone with an anisotropic ratio of 55.8% and Fermi velocity of 7.26 × 105 m s-1 is revealed in TPH-C5N3. The nontrivial topological properties of TPH-C5N3 are demonstrated by a non-zero Z2 invariant and topologically protected edge states. Our study offers theoretical insights into an anisotropic 2D carbon nitride material, laying the groundwork for its design and synthesis.

Gate-Defined Quantum Confinement in CVD 2D WS2.

Temperature-dependent transport measurements are performed on the same set of chemical vapor deposition (CVD)-grown WS2 single- and bilayer devices before and after atomic layer deposition (ALD) of HfO2 . This isolates the influence of HfO2 deposition on low-temperature carrier transport and shows that carrier mobility is not charge impurity limited as commonly thought, but due to another important but commonly overlooked factor: interface roughness. This finding is corroborated by circular dichroic photoluminescence spectroscopy, X-ray photoemission spectroscopy, cross-sectional scanning transmission electron microscopy, carrier-transport modeling, and density functional modeling. Finally, electrostatic gate-defined quantum confinement is demonstrated using a scalable approach of large-area CVD-grown bilayer WS2 and ALD-grown HfO2 . The high dielectric constant and low leakage current enabled by HfO2 allows an estimated quantum dot size as small as 58 nm. The ability to lithographically define increasingly smaller devices is especially important for transition metal dichalcogenides due to their large effective masses, and should pave the way toward their use in quantum information processing applications.

Strain Investigation on Spin-Dependent Transport Properties of γ-Graphyne Nanoribbon Between Gold Electrodes.

Strain engineering has become one of the effective methods to tune the electronic structures of materials, which can be introduced into the molecular junction to induce some unique physical effects. The various γ-graphyne nanoribbons (γ-GYNRs) embedded between gold (Au) electrodes with strain controlling have been designed, involving the calculation of the spin-dependent transport properties by employing the density functional theory. Our calculated results exhibit that the presence of strain has a great effect on transport properties of molecular junctions, which can obviously enhance the coupling between the γ-GYNR and Au electrodes. We find that the current flowing through the strained nanojunction is larger than that of the unstrained one. What is more, the length and strained shape of the γ-GYNR serves as the important factors which affect the transport properties of molecular junctions. Simultaneously, the phenomenon of spin-splitting occurs after introducing strain into nanojunction, implying that strain engineering may be a new means to regulate the electron spin. Our work can provide theoretical basis for designing of high performance graphyne-based devices in the future.

Quantum Transport in Two-Dimensional WS2 with High-Efficiency Carrier Injection through Indium Alloy Contacts.

Two-dimensional transition metal dichalcogenides (TMDCs) have properties attractive for optoelectronic and quantum applications. A crucial element for devices is the metal-semiconductor interface. However, high contact resistances have hindered progress. Quantum transport studies are scant as low-quality contacts are intractable at cryogenic temperatures. Here, temperature-dependent transfer length measurements are performed on chemical vapor deposition grown single-layer and bilayer WS2 devices with indium alloy contacts. The devices exhibit low contact resistances and Schottky barrier heights (∼10 kΩ µm at 3 K and 1.7 meV). Efficient carrier injection enables high carrier mobilities (∼190 cm2 V-1 s-1) and observation of resonant tunnelling. Density functional theory calculations provide insights into quantum transport and properties of the WS2-indium interface. Our results reveal significant advances toward high-performance WS2 devices using indium alloy contacts.

Low-bias negative differential resistance in junction of a benzene between zigzag-edged phosphorene nanoribbons.

We study the electron transport properties through the junction of a benzene molecule in conjunction with two monolayer zigzag-edged phosphorene nanoribbon (ZPNR) electrodes by applying the nonequilibrium Green's functions in combination with the density functional theory. We find that the molecular junction with two phosphorus-carbon bonds exhibits an interesting low-bias negative differential resistance effect with a peak-to-valley ratio of 29, which originates from the edge states in ZPNR due to the anisotropic band structure of phosphorene. Importantly, the performance of the junction can be tuned via the molecule-ZPNR interface bonding. The findings may be useful in sensitive-device applications. Furthermore, the physical mechanisms are revealed and discussed in terms of the electronic transmission spectrum, the evolution of the frontier molecular orbitals, the local device density of states around the Fermi level, and the projected density of states.