Effect of microplastics on urban wastewater disinfection and impact on effluent reuse: Sunlight/H2O2 vs solar photo-Fenton at neutral pH.

The interference of three types of microplastics (MPs) on the inactivation of Escherichia coli (E. coli) by advanced oxidation processes (AOPs) (namely, sunlight/H2O2 and solar photo-Fenton (SPF) with Ethylenediamine-N,N'-disuccinic acid (EDDS)), in real secondary treated urban wastewater was investigated for the first time. Inactivation by sunlight/H2O2 treatment decreased as MPs concentration and H2O2 dose were increased. Noteworthy, an opposite behaviour was observed for SPF process where inactivation increased as MPs concentration was increased. Biofilm formation and microbial attachment on surfaces of post-treated MPs were observed on polyethylene (PE) and polyvinyl chloride (PVC) MPs by field emission scanning electron microscopy. In presence of PE MPs, a complete inactivation of E. Coli was achieved by SPF with EDDS (Fe:EDDS = 1:2) after 90 min treatment unlike of sunlight/H2O2 treatment (∼4.0 log reduction, 40 mg/L H2O2 dose, 90 min treatment). The lower efficiency of sunlight/H2O2 process could be attributed to the blocking/scattering effect of MPs on sunlight, which finally reduced the intracellular photo Fenton effect. A reduced E. coli regrowth was observed in presence of MPs. SPF (Fe:EDDS = 1:1) with PE MPs was less effective in controlling bacterial regrowth (∼120 CFU/100 mL) than sunlight/H2O2 (∼10 CFU/100 mL) after 48 h of post-treatment. These results provide useful information about possible interference of MPs on urban wastewater disinfection by solar driven AOPs and possible implications for effluent reuse.

Large Area Deposition by Radio Frequency Sputtering of Gd0.1Ce0.9O1.95 Buffer Layers in Solid Oxide Fuel Cells: Structural, Morphological and Electrochemical Investigation.

We investigate the influence of position, under large circular sputtering targets, on the final electrochemical performance of 35 mm diameter button solid oxide fuel cells with sputter-deposited Gadolinium doped Ceria barrier layers, positioned in order to almost cover the entirety of the area associated with a 120 × 80 mm2 industrial cell. We compare the results obtained via structural and morphological analysis to the Electrochemical Impedance Spectroscopy (EIS) measurements performed on the button cells, disentangling the role of different parameters. The Atomic Force Microscopy analysis makes it possible to observe a decrease in the roughness values from the peripheral to the central zones under the sputtering target, with peak-to-valley roughness values, respectively, decreasing from 380 nm to 300 nm, while Scanning Electron Microscopy and Energy Dispersive Spectroscopy show a dependence of the layer coverage from the position. The electrochemical performances of button cells with buffer layers of only 200 nm in thickness, and with negligible thickness gradients across them, show current density values of up to 478 mA/cm2 at 0.8 V and 650 °C, with an improvement of more than 67% with respect to button cells with standard (screen printed) buffer layers. These results point out the major influence exerted by parameters such as the thickness gradient and the coverage of the sputtered buffer layers in determining the final electrochemical performances.

Emergence and Evolution of Crystallization in TiO2 Thin Films: A Structural and Morphological Study.

Among all transition metal oxides, titanium dioxide (TiO2) is one of the most intensively investigated materials due to its large range of applications, both in the amorphous and crystalline forms. We have produced amorphous TiO2 thin films by means of room temperature ion-plasma assisted e-beam deposition, and we have heat-treated the samples to study the onset of crystallization. Herein, we have detailed the earliest stage and the evolution of crystallization, as a function of both the annealing temperature, in the range 250-1000 °C, and the TiO2 thickness, varying between 5 and 200 nm. We have explored the structural and morphological properties of the as grown and heat-treated samples with Atomic Force Microscopy, Scanning Electron Microscopy, X-ray Diffractometry, and Raman spectroscopy. We have observed an increasing crystallization onset temperature as the film thickness is reduced, as well as remarkable differences in the crystallization evolution, depending on the film thickness. Moreover, we have shown a strong cross-talking among the complementary techniques used displaying that also surface imaging can provide distinctive information on material crystallization. Finally, we have also explored the phonon lifetime as a function of the TiO2 thickness and annealing temperature, both ultimately affecting the degree of crystallinity.

Fabrication of SrTiO3 Layer on Pt Electrode for Label-Free Capacitive Biosensors.

Due to their interesting ferroelectric, conductive and dielectric properties, in recent years, perovskite-structured materials have begun to attract increasing interest in the biosensing field. In this study, a strontium titanate perovskite layer (SrTiO3) has been synthesized on a platinum electrode and exploited for the development of an impedimetric label-free immunosensor for Escherichia coli O157:H7 detection. The electrochemical characterization of the perovskite-modified electrode during the construction of the immunosensor, as well as after the interaction with different E. coli O157:H7 concentrations, showed a reproducible decrease of the total capacitance of the system that was used for the analytical characterization of the immunosensor. Under optimized conditions, the capacitive immunosensor showed a linear relationship from to 1 to 7 log cfu/mL with a low detection limit of 1 log cfu/mL. Moreover, the atomic force microscopy (AFM) technique underlined the increase in roughness of the SrTiO3-modified electrode surface after antibody immobilization, as well as the effective presence of cells with the typical size of E. coli.

Graphene field effect transistors with niobium contacts and asymmetric transfer characteristics.

We fabricate back-gated field effect transistors using niobium electrodes on mechanically exfoliated monolayer graphene and perform electrical characterization in the pressure range from atmospheric down to 10(-4) mbar. We study the effect of room temperature vacuum degassing and report asymmetric transfer characteristics with a resistance plateau in the n-branch. We show that weakly chemisorbed Nb acts as p-dopant on graphene and explain the transistor characteristics by Nb/graphene interaction with unpinned Fermi level at the interface.