RESUMO
Theory, models, and experimental phenomena provide evidence of the existence of shallow bands in silicon induced by the dislocation strain field. Nevertheless, only deep bands, likely associated with contamination at dislocations, have been detected up to now by junction spectroscopy. Here we present the first experimental result by junction spectroscopy that assesses the existence of the dislocation related shallow states. These are found to be located at 70 and 60 meV from the valence and conduction band edge, respectively.
RESUMO
Synthetic hydroxyapatite powder was added to commercial bone cement to improve its physico-mechanical properties. The study of the setting properties showed the considerable effect of hydroxyapatite (HA) on the polymerization process; in particular statistical treatment of the experimental results revealed a significant relative minimum of the exothermic peak value at HA 5% weight percentage--an effect attributed to the HA 'crumbling' action on the microporosity features. The relationship between the interface (air and monomer bubbles/acrylic resin) versus dough composition was evaluated: the comparison between this last one and the corresponding internal energy variation supports the above hypothesis.
