[Quality of life of silicotic former miners]. / Qualité de vie des anciens mineurs silicotiques.

BACKGROUND: The aim of this study was to assess the respiration-related quality of life (QoL) of former miners with silicosis and to determine the factors that could affect QoL (socio-demographic and professional parameters, toxic habits, co-morbidities, and degree of respiratory disability). METHODS: This cross-sectional study involved 104 people who came for routine periodic consultation and included the medical records file and a questionnaire. RESULTS: The average age was 66.3±5.4 years. Functional respiratory symptoms were exertional dyspnoea (97.2%), cough (73.1%), sputum (59.6%) and wheezing (25%). Associated respiratory illnesses were asthma (29.8%), COPD (18.3%), persistent rhinitis (13.5%) and tuberculosis (5.8%). 3/4 of the miners had at least one comorbidity. The most common were cardiovascular (43.3%), metabolic (27.9%) and musculo-skeletal (25%). The ventilatory defects were mild in 27.9%, moderate in 57.7% and severe in 14.4%. The radiological lesions exceeded four zones of the pulmonary parenchyma in 81.8%. The average scores for "symptoms", "activities ¼, « impacts" and "total" were 49.1±14%, 77.8±12%, 66.5±16% and 67±16%, respectively. Age, duration of exposure, comorbidities, moderate to severe ventilatory defects, and significant to severe impairment were correlated with altered QoL. CONCLUSION: Improvement of QoL requires comprehensive care with the management of complications, co-morbidities, better patient awareness, and better consideration of the feelings of patients.

SiGe layer thickness effect on the structural and optical properties of well-organized SiGe/SiO2 multilayers.

In this work, we report on the production of regular (SiGe/SiO2)20 multilayer structures by conventional RF-magnetron sputtering, at 350 °C. Transmission electron microscopy, scanning transmission electron microscopy, raman spectroscopy, and x-ray reflectometry measurements revealed that annealing at a temperature of 1000 °C leads to the formation of SiGe nanocrystals between SiO2 thin layers with good multilayer stability. Reducing the nominal SiGe layer thickness (t SiGe) from 3.5-2 nm results in a transition from continuous SiGe crystalline layer (t SiGe ∼ 3.5 nm) to layers consisting of isolated nanocrystals (t SiGe ∼ 2 nm). Namely, in the latter case, the presence of SiGe nanocrystals ∼3-8 nm in size, is observed. Spectroscopic ellipsometry was applied to determine the evolution of the onset in the effective optical absorption, as well as the dielectric function, in SiGe multilayers as a function of the SiGe thickness. A clear blue-shift in the optical absorption is observed for t SiGe ∼ 2 nm multilayer, as a consequence of the presence of isolated nanocrystals. Furthermore, the observed near infrared values of n = 2.8 and k = 1.5 are lower than those of bulk SiGe compounds, suggesting the presence of electronic confinement effects in the nanocrystals. The low temperature (70 K) photoluminescence measurements performed on annealed SiGe/SiO2 nanostructures show an emission band located between 0.7-0.9 eV associated with the development of interface states between the formed nanocrystals and surrounding amorphous matrix.

Influence of annealing conditions on the formation of regular lattices of voids and Ge quantum dots in an amorphous alumina matrix.

In this work, the influence of air pressure during the annealing of Ge quantum dot (QD) lattices embedded in an amorphous Al(2)O(3) matrix on the structural, morphological and compositional properties of the film is studied. The formation of a regularly ordered void lattice after performing a thermal annealing process is explored. Our results show that both the Ge desorption from the film and the regular ordering of the QDs are very sensitive to the annealing parameters. The conditions for the formation of a void lattice, a crystalline Ge QD lattice and a disordered QD lattice are presented. The observed effects are explained in terms of oxygen interaction with the Ge present in the film.

Mn-doped ZnO nanocrystals embedded in Al2O3: structural and electrical properties.

We report on the structural and electrical properties of Mn-doped ZnO/Al(2)O(3) nanostructures produced by the pulsed laser deposition technique. Grazing incidence small angle x-ray scattering (GISAXS) and Rutherford backscattering spectrometry revealed the multilayered structure in as-deposited samples. Annealing of the nanostructures was shown to promote the formation of nanocrystals embedded in the Al(2)O(3) matrix, as was evidenced by GISAXS and high resolution transmission microscopy. Particle-induced x-ray emission analysis showed a doping of 8 at.% Mn in ZnO. Grazing incidence x-ray diffraction and Raman spectroscopy demonstrated that the nanocrystals have the pure wurtzite ZnMnO crystalline phase. Resonant Raman scattering displayed an increase of intensity of the 1LO mode as well as broadening of the 2LO mode related to the size effect. Capacitance-voltage measurements showed carrier retention with a voltage shift higher than those reported for similar systems.

Structural and optical properties of ge nanocrystals embedded in Al2O3.

Ge nanocrystals (NCs) embedded in aluminum oxide were grown by RF-magnetron sputtering. Raman, high resolution transmission electron microscopy (HRTEM), selected area diffraction (SAD), and X-ray diffraction (XRD) techniques confirmed good cristallinity of the NCs from samples annealed at 800 degrees C. The average NC size was estimated to be around 7 nm. Photoluminescence (PL) measurements show an emission related to the NCs. The temperature dependence of the PL confirms the confinement phenomenon in the Ge NCs.

Scanning tunneling microscopy of a liquid crystalline phase of poly((dA-dT).(dA-dT)) induced by a histone H1 peptide.

In this report, we present the first observations of uncoated poly((dA-dT).(dA-dT)) molecules organized in a liquid crystalline phase induced by the binding of a histone H1 peptide. The effect of the peptide on the polymer condensation is clearly illustrated on the large-scale STM images which reveal a well defined spacing between parallel DNA helices. High resolution images of rare isolated molecules of poly((dA-dT).(dA-dT)) exhibit two sets of helical pitch values, 6 and 7.5 nm. While the lower value can be correlated with the pitch of poly((dA-dT).(dA-dT)), the larger one may arise from peptide binding in the polymer minor groove.