Elementary excitations of single-photon emitters in hexagonal boron nitride.

Single-photon emitters serve as building blocks for many emerging concepts in quantum photonics. The recent identification of bright, tunable and stable emitters in hexagonal boron nitride (hBN) has opened the door to quantum platforms operating across the infrared to ultraviolet spectrum. Although it is widely acknowledged that defects are responsible for single-photon emitters in hBN, crucial details regarding their origin, electronic levels and orbital involvement remain unknown. Here we employ a combination of resonant inelastic X-ray scattering and photoluminescence spectroscopy in defective hBN, unveiling an elementary excitation at 285 meV that gives rise to a plethora of harmonics correlated with single-photon emitters. We discuss the importance of N π* anti-bonding orbitals in shaping the electronic states of the emitters. The discovery of elementary excitations in hBN provides fundamental insights into quantum emission in low-dimensional materials, paving the way for future investigations in other platforms.

Interaction-driven transport of dark excitons in 2D semiconductors with phonon-mediated optical readout.

The growing field of quantum information technology requires propagation of information over long distances with efficient readout mechanisms. Excitonic quantum fluids have emerged as a powerful platform for this task due to their straightforward electro-optical conversion. In two-dimensional transition metal dichalcogenides, the coupling between spin and valley provides exciting opportunities for harnessing, manipulating, and storing bits of information. However, the large inhomogeneity of single layers cannot be overcome by the properties of bright excitons, hindering spin-valley transport. Nonetheless, the rich band structure supports dark excitonic states with strong binding energy and longer lifetime, ideally suited for long-range transport. Here we show that dark excitons can diffuse over several micrometers and prove that this repulsion-driven propagation is robust across non-uniform samples. The long-range propagation of dark states with an optical readout mediated by chiral phonons provides a new concept of excitonic devices for applications in both classical and quantum information technology.

Visualization of Dark Excitons in Semiconductor Monolayers for High-Sensitivity Strain Sensing.

Transition-metal dichalcogenides (TMDs) are layered materials that have a semiconducting phase with many advantageous optoelectronic properties, including tightly bound excitons and spin-valley locking. In tungsten-based TMDs, spin- and momentum-forbidden transitions give rise to dark excitons that typically are optically inaccessible but represent the lowest excitonic states of the system. Dark excitons can deeply affect the transport, dynamics, and coherence of bright excitons, hampering device performance. Therefore, it is crucial to create conditions in which these excitonic states can be visualized and controlled. Here, we show that compressive strain in WS2 enables phonon scattering of photoexcited electrons between momentum valleys, enhancing the formation of dark intervalley excitons. We show that the emission and spectral properties of momentum-forbidden excitons are accessible and strongly depend on the local strain environment that modifies the band alignment. This mechanism is further exploited for strain sensing in two-dimensional semiconductors, revealing a gauge factor exceeding 104.