A soluble precursor of hexacene and its application in thin film transistors.

A soluble precursor of hexacene is prepared from a cycloaddition of hexacene and diethyl ketomalonate in high yield. It can be used to make hexacene thin-films through spin-coating for the fabrication of organic field effect transistors.

The synthesis, crystal structure and charge-transport properties of hexacene.

Acenes can be thought of as one-dimensional strips of graphene and they have the potential to be used in the next generation of electronic devices. However, because acenes larger than pentacene have been found to be unstable, it was generally accepted that they would not be particularly useful materials under normal conditions. Here, we show that, by using a physical vapour-transport method, platelet-shaped crystals of hexacene can be prepared from a monoketone precursor. These crystals are stable in the dark for a long period of time under ambient conditions. In the crystal, the molecules are arranged in herringbone arrays, quite similar to that observed for pentacene. A field-effect transistor made using a single crystal of hexacene displayed a hole mobility significantly higher than that of pentacene. This result suggests that it might be instructive to further explore the potential of other higher acenes.

Solution processed high performance pentacene thin-film transistors.

High performance thin-film transistors were fabricated using a new precursor of pentacene through a multiple spin-heat procedure. High quality pentacene thin films can be prepared by this method and hence a FET device can be made in a top-contact configuration. The device exhibited a remarkable field-effect mobility of 0.38 cm(2) V(-1) s(-1) with an on/off ratio of 10(6).

Photogeneration and thermal generation of pentacene from soluble precursors for OTFT applications.

A CO adduct of pentacene with an unsymmetrical structure is synthesized; it is soluble and can be spin-coated into thin films. Pentacene is regenerated in near quantitative yield by either thermal or photoinduced elimination of CO. OTFT devices fabricated by this compound exhibit typical FET characteristics.