Fabrication and Luminescence Properties of Highly Transparent Green-Emitting Ho:Y2O3 Ceramics for Laser Diode Lighting.

Highly transparent Ho:Y2O3 ceramics for laser diode lighting were prepared using the vacuum sintering method with 0.3 at.% Nb2O5 as a sintering additive. The microstructures, transmittance, and luminescence properties of the Ho:Y2O3 ceramic samples were investigated in detail. The transmittance levels of all samples with various Ho3+ concentrations reached ~81.5% (2 mm thick) at 1100 nm. Under the excitation of 363 nm (ultraviolet) or 448 nm (blue) light, Ho:Y2O3 transparent ceramic samples showed that green emission peaked at 550 nm. The emission intensity was strongly affected by the concentration of Ho3+ ions, reaching its highest level in the sample doped with 1 at.% Ho3+. The CIE coordinates of the luminescence were in the green region (i.e., the CIE coordinates of the sample doped with 1 at.% Ho3+ were [0.27, 0.53] and [0.30, 0.69], under the excitation of 363 nm and 448 nm light, respectively). The possibility of its application as laser diode lighting was reported. Under the excitation of 450 nm blue laser, the sample doped with 0.5 at.% Ho3+ had the best performance: the saturated luminous flux, lumen efficiency, and the luminescence saturation power densities were 800 lm, 57.7 lm/W, and 17.6 W/mm2, respectively. Furthermore, the materials have high thermal conductivity and mechanical strength due to their host of rare-earth sesquioxide. Thus, Ho:Y2O3 transparent ceramics are expected to be a promising candidate for green-light-emitting devices for solid-state lighting, such as laser diode lighting.

Fabrication and Luminescent Properties of Highly Transparent Er:Y2O3 Ceramics by Hot Pressing Sintering.

Highly transparent Er:Y2O3 ceramics (1-9 at.% Er) were fabricated by hot pressing sintering with ZrO2 as the sintering additive. The microstructures, transmittance, luminescent properties, thermal conductivity, and mechanical properties of the Er:Y2O3 ceramic samples were investigated in detail. The samples all exhibited dense and fine grain microstructures; the average grain sizes were about 0.8 µm. The transmittance levels of the samples with various Er concentrations (2 mm thick) at the wavelengths of 600 and 2700 nm were ~74 and ~83%, respectively. As the Er doping concentration increased from 1 to 9 at.%, the up-conversion luminescence of the samples gradually changed from green to red, with the intensity ratio of red/green light increasing from 0.28 to 2.01. Meanwhile, the down-conversion luminescence properties of the specimens were also studied. When the samples were under 980 nm excitation, the emission bands were detected at 1552, 1573, 1639, and 1661 nm. The thermal conductivity of the samples was found to decrease from 8.72 to 5.81 W/(m·K) with an increase of the Er concentration from 1 to 9 at.%. Moreover, the microhardness and fracture toughness of the samples with 1 at.% Er concentration were ~8.51 GPa and ~1.03 MPa·m1/2, respectively.

High-Quality-Factor AlON Transparent Ceramics for 5 GHz Wi-Fi Aesthetically Decorative Antennas.

Transparent material has been widely used in product design and has seen a large increase in its use. In this paper, a kind of aesthetically decorative 5 GHz Wi-Fi dielectric resonator antenna (DRA) of aluminum oxynitride (AlON) transparent ceramic has been designed. High-quality-factor AlON transparent dielectric ceramics were fabricated by presintering at 1780 °C and further cold isostatic pressing (CIP) under a 200 MPa argon atmosphere. For a 9.0 mm thick specimen, the in-line light transmittance reached 83%. Optimum dielectric constant (εr = 9.32), quality factor (Qf = 47 960) and temperature coefficient (TCF = -51.7 ppm/°C) was achieved in the AlON transparent ceramic by cold isostatic pressing. As a result, the proposed aesthetically decorative DRA can achieve an impedance bandwidth of 32% (4.48-6.19 GHz), a high radiation efficiency of 85%, and a low cross-polarization discrimination (XPD) of -30 dB. To achieve a broad bandwidth, the proposed antenna was excited in its dominant TE111x mode and higher-order TE113x mode. The proposed antenna is thus an excellent candidate for an indoor decoration Wi-Fi antenna.

Kicking the habit/semiconductor lasers without isolators.

In this paper, we propose and demonstrate a solution to the problem of coherence degradation and collapse caused by the back reflection of laser power into the laser resonator. The problem is most onerous in semiconductor lasers (SCLs), which are normally coupled to optical fibers, and results in the fact that practically every commercial SCL has appended to it a Faraday-effect isolator that blocks most of the reflected optical power preventing it from entering the laser resonator. The isolator assembly is many times greater in volume and cost than the SCL itself. This problem has resisted a practical and economic solution despite decades of effort and remains the main obstacle to the emergence of a CMOS-compatible photonic integrated circuit technology. A simple solution to the problem is thus of major economic and technological importance. We propose a strategy aimed at weaning semiconductor lasers from their dependence on external isolators. Lasers with large internal Q-factors can tolerate large reflections, limited only by the achievable Q values, without coherence collapse. A laser design is demonstrated on the heterogeneous Si/III-V platform that can withstand 25 dB higher reflected power compared to commercial DFB lasers. Larger values of internal Qs, achievable by employing resonator material of lower losses and improved optical design, should further increase the isolation margin and thus obviate the need for isolators altogether.

Synthesis of Multiwall Boron Nitride (BN) Nanotubes by a PVD Method Based on Vapor-Liquid-Solid Growth.

Multiwall boron nitride (BN) nanotubes were synthesized by a novel physical vapor deposition (PVD) method, in which the BN nanotubes grow on a compact substrate composed of AlN, γ-Al2O3, Y2O3, and carbon powders. The obtained BN nanotubes assemble in an orderly manner with a typical length of over one millimeter and a diameter of one-hundred nanometers. The hollow multiwall tubes have a spherical tip, which is presumed to be a liquid drop at the synthesis temperature, indicating the vapor-liquid-solid (VLS) growth mechanism.

Determining the Quality Factor of Dielectric Ceramic Mixtures with Dielectric Constants in the Microwave Frequency Range.

Microwave dielectric ceramic materials are extensively utilized in microwave applications because of their high dielectric constants and quality factors. These applications also require ceramics of zero temperature coefficients at the resonant frequency (τ f ), which can be realized through mixing a ceramic that one is interested in with another ceramic with -τ f , or by performing the ionic substitution. With the mixing/ionic substitution, it is indispensable to compute the quality factors precisely. Previous study indicates that the quality factor depends on the grain size, porosity, internal strain, structure, phase evolution, and conductivity etc. Here we derive a quality factor formula based on the definition, which works very well for multiphase composites, single phase solid solutions, and equivalent ionic substituted single phase materials. Our formula calculation and fits to the previous experimental results demonstrate that the quality factor of the ceramic mixtures strongly depend on the dielectric constants and the dielectric constant variation index. Our results suggest that the impacts from grain size, porosity, and internal strain etc. can be summarized to the dielectric constant or dielectric constant variation index, which is of great importance for future design of high performance microwave dielectric ceramics.